{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/129225"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/129225","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"A physics based compact model for a diamond optically gated field effect transistor","abstract":"Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms","abstract_html":"Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms","abstract_has_math":false,"creators":["White, Ethan"],"institution":"University of Illinois Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Rakheja, Shaloo"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-04-21","date_published":"2025-04-21","updated_at":"2026-07-22T22:25:04Z","subjects":["Transistor","Diamond","Compact Model"],"languages":["en","eng"],"rights":["Copyright 2025 Ethan White"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/129225","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rakheja, Shaloo"]},{"key":"dc:creator","label":"Author","values":["White, Ethan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-04-21","2025-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Transistor","Diamond","Compact Model"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2025 Ethan White"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/129225"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms","The student, Ethan White, accepted the attached license on 2025-04-21 at 09:03.","The student, Ethan White, submitted this Thesis for approval on 2025-04-21 at 09:11.","This Thesis was approved for publication on 2025-04-21 at 13:00.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21853 on 2025-10-19 at 18:09:34","Electricity and electrical devices permeate our day to day life, and if recent trends continue they will only grow in their prevalence. Global warming necessitates a transition away from fossil fuels, yet modern life has been built on a foundation of the energy abundance they provide. Adding more and more things to our electrical grid that will require increasing amounts of power will put immense strain on our electricity infrastructure. That infrastructure will need better components that will be able to deal with the large amounts of power and heat that will flow through them. Diamond has superior material qualities that allow it to handle much more power and heat than most other semiconductors. What it does not have, though, is the decades of research and development into device physics and manufacturing that a mature material like silicon does. In this work, one step will be made towards rectifying this. A compact model will be shown that models a diamond based junction field effect transistor (JFET) with an optically controlled gate terminal. This compact model incorporates the electrical properties of a JFET, the sub-band optical excitation that is responsible for gate control, and a novel “memory-effect”. Results will be compared to TCAD simulations. This compact model will help accelerate the implementation of diamond semiconducting devices into power circuitry."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["A physics based compact model for a diamond optically gated field effect transistor"]}]}],"canonical_facts":{"dc:contributor":["Rakheja, Shaloo"],"dc:creator":["White, Ethan"],"dc:date":["2025-04-21","2025-05"],"dc:description":["Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms","The student, Ethan White, accepted the attached license on 2025-04-21 at 09:03.","The student, Ethan White, submitted this Thesis for approval on 2025-04-21 at 09:11.","This Thesis was approved for publication on 2025-04-21 at 13:00.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21853 on 2025-10-19 at 18:09:34","Electricity and electrical devices permeate our day to day life, and if recent trends continue they will only grow in their prevalence. Global warming necessitates a transition away from fossil fuels, yet modern life has been built on a foundation of the energy abundance they provide. Adding more and more things to our electrical grid that will require increasing amounts of power will put immense strain on our electricity infrastructure. That infrastructure will need better components that will be able to deal with the large amounts of power and heat that will flow through them. Diamond has superior material qualities that allow it to handle much more power and heat than most other semiconductors. What it does not have, though, is the decades of research and development into device physics and manufacturing that a mature material like silicon does. In this work, one step will be made towards rectifying this. A compact model will be shown that models a diamond based junction field effect transistor (JFET) with an optically controlled gate terminal. This compact model incorporates the electrical properties of a JFET, the sub-band optical excitation that is responsible for gate control, and a novel “memory-effect”. Results will be compared to TCAD simulations. This compact model will help accelerate the implementation of diamond semiconducting devices into power circuitry."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/129225"],"dc:language":["en","eng"],"dc:rights":["Copyright 2025 Ethan White"],"dc:subject":["Transistor","Diamond","Compact Model"],"dc:title":["A physics based compact model for a diamond optically gated field effect transistor"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:04Z"}