{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/121939"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/121939","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Etching for quantum-ready surfaces","abstract":"Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2024-03-01 without embargo terms","abstract_html":"Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2024-03-01 without embargo terms","abstract_has_math":false,"creators":["Michaels, Julian Arthur"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Eden, James G","Li, Xiuling","Bogdanov, Simeon","Goldschmidt, Elizabeth","Lyding, Joseph","Ravaioli, Umberto"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2023,"date_issued":"2023-12","date_published":"2023-12","updated_at":"2026-07-22T22:25:00Z","subjects":["Quantum","Atomic Layer Etching","Nanotechnology","Plasma","Plasma Etching","Atomic Force Microscopy","Wet Etching","Quantum Devices"],"languages":["en","eng"],"rights":["Copyright 2023 Julian Michaels"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/121939","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Eden, James G","Li, Xiuling","Bogdanov, Simeon","Goldschmidt, Elizabeth","Lyding, Joseph","Ravaioli, Umberto"]},{"key":"dc:creator","label":"Author","values":["Michaels, Julian Arthur"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2023-12","2023-09-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Quantum","Atomic Layer Etching","Nanotechnology","Plasma","Plasma Etching","Atomic Force Microscopy","Wet Etching","Quantum Devices"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2023 Julian Michaels"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/121939"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2024-03-01 without embargo terms","The student, Julian Michaels, accepted the attached license on 2023-08-24 at 11:32.","The student, Julian Michaels, submitted this Dissertation for approval on 2023-08-24 at 11:39.","This Dissertation was approved for publication on 2023-09-05 at 14:59.","DSpace SAF Submission Ingestion Package generated from Vireo submission #19817 on 2024-03-01 at 13:13:19","The burgeoning field of quantum mechanical devices is impeded by the lossy nature of its underlying physical systems. Such devices are pristine in conception but not in physical realization. Unlike classical devices, quantum devices that rely on individual particles cannot tolerate loss. Fabrication techniques are imperfectin this regard and are a major barrier to quantum supremacy. This thesis seeks to improve the fabrication methodology for etching a few pertinent quantum materials: 4H-SiC, diamond, and CeO2. The former sees development in metal-assisted chemical etching (MacEtch) and all three gain plasma-based anisotropic atomic layer etching (ALE) recipes. Moreover, the field of ALE is expanded with a novel approach to ALE, called bias-pulsed atomic layer etching (BP-ALE) that vastly speeds the etch rate while maintaining the inimitable precision of ALE. Subangstrom RMS surface roughness was observed in both 4H-SiC and diamond confirmed with several atomic force microscopy (AFM) scans. The quality of these etched surfaces is confirmed by probing point defect spin qubits embedded inside 4H-SiC substrates. MacEtch is shown to enhance photoluminescence intensity of embedded spin qubits, and BP-ALE is used to study the surface proximal effects on theses systems"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Etching for quantum-ready surfaces"]}]}],"canonical_facts":{"dc:contributor":["Eden, James G","Li, Xiuling","Bogdanov, Simeon","Goldschmidt, Elizabeth","Lyding, Joseph","Ravaioli, Umberto"],"dc:creator":["Michaels, Julian Arthur"],"dc:date":["2023-12","2023-09-05"],"dc:description":["Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2024-03-01 without embargo terms","The student, Julian Michaels, accepted the attached license on 2023-08-24 at 11:32.","The student, Julian Michaels, submitted this Dissertation for approval on 2023-08-24 at 11:39.","This Dissertation was approved for publication on 2023-09-05 at 14:59.","DSpace SAF Submission Ingestion Package generated from Vireo submission #19817 on 2024-03-01 at 13:13:19","The burgeoning field of quantum mechanical devices is impeded by the lossy nature of its underlying physical systems. Such devices are pristine in conception but not in physical realization. Unlike classical devices, quantum devices that rely on individual particles cannot tolerate loss. Fabrication techniques are imperfectin this regard and are a major barrier to quantum supremacy. This thesis seeks to improve the fabrication methodology for etching a few pertinent quantum materials: 4H-SiC, diamond, and CeO2. The former sees development in metal-assisted chemical etching (MacEtch) and all three gain plasma-based anisotropic atomic layer etching (ALE) recipes. Moreover, the field of ALE is expanded with a novel approach to ALE, called bias-pulsed atomic layer etching (BP-ALE) that vastly speeds the etch rate while maintaining the inimitable precision of ALE. Subangstrom RMS surface roughness was observed in both 4H-SiC and diamond confirmed with several atomic force microscopy (AFM) scans. The quality of these etched surfaces is confirmed by probing point defect spin qubits embedded inside 4H-SiC substrates. MacEtch is shown to enhance photoluminescence intensity of embedded spin qubits, and BP-ALE is used to study the surface proximal effects on theses systems"],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/121939"],"dc:language":["en","eng"],"dc:rights":["Copyright 2023 Julian Michaels"],"dc:subject":["Quantum","Atomic Layer Etching","Nanotechnology","Plasma","Plasma Etching","Atomic Force Microscopy","Wet Etching","Quantum Devices"],"dc:title":["Etching for quantum-ready surfaces"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:00Z"}