{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/117524"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/117524","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Strain-controlled disorder-defined apertures for optical mode control in vertical-cavity surface-emitting lasers","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-12-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-12-01","abstract_has_math":false,"creators":["Su, Patrick"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Dallesasse, John M","Feng, Milton","Nahrstedt, Klara","Lee, Minjoo L"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2022,"date_issued":"2022-12","date_published":"2022-12","updated_at":"2026-07-22T22:24:56Z","subjects":["Vertical-cavity surface-emitting lasers","impurity-induced disordering","single-fundamental-mode","optical mode-control"],"languages":["en","eng"],"rights":["@2022 Patrick Su"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/117524","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Dallesasse, John M","Feng, Milton","Nahrstedt, Klara","Lee, Minjoo L"]},{"key":"dc:creator","label":"Author","values":["Su, Patrick"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2022-12","2022-08-23"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Vertical-cavity surface-emitting lasers","impurity-induced disordering","single-fundamental-mode","optical mode-control"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["@2022 Patrick Su"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/117524"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-12-01","The student, Patrick Su, accepted the attached license on 2022-08-21 at 00:21.","The student, Patrick Su, submitted this Dissertation for approval on 2022-08-21 at 00:32.","This Dissertation was approved for publication on 2022-08-23 at 09:47.","DSpace SAF Submission Ingestion Package generated from Vireo submission #18466 on 2023-04-12 at 11:34:14","Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become ubiquitous in modern consumer markets. Owing to their small footprint, circular-beam profile, on-wafer probing capability, and high reliability, VCSELs have been widely deployed for optical transceivers and consumer facial recognition systems. In the advent of emerging applications such as autonomous driving, AR/VR systems, and automated robotics, high-power 2D VCSEL arrays are being used as the premier illumination source for optical depth sensing modules. Through the initiation of Zn diffusion, impurity-induced disordering (IID) has been demonstrated to enable optical mode control and increased modulation frequencies, and provide carrier and photon confinement in vertical-cavity surface-emitting lasers. While disordering provides a wafer-scale method of improving device performance, the regions of disordering must be carefully controlled. Adverse effects can overshadow the benefits of disordering if it is not properly managed. Due to the isotropic nature of diffusion, undesirable lateral undercutting can occur during deep disordering processes where the severity of this effect is defined by the initial diffusion front formed. In this work, the fine control of Zn diffusion fronts in apertures formed using impurity-induced disordering is presented. By tailoring the diffusion mask strain, the diffusion front curvature of the impurity-induced disordering aperture can be controlled. Through modifying the composition of SiN$_{x}$ diffusion masks, various film stresses can be achieved. When employed for disordering, these form a variety of disordering apertures with differing diffusion fronts. Through utilizing tensile-strained diffusion masks, a disordering front with reduced lateral and enhanced vertical disordering is formed. Conversely, a compressive-strained diffusion mask yields a disordering front with enhanced lateral and reduced vertical disordering. Tensile-strained diffusion masks yield the most desirable disordering front profile, as it enables maximum higher-order mode suppression while mitigating the encroachement of the disordering front onto the fundamental-mode. Using tensile-strained diffusion masks, record high-power single-fundamnetal-mode emission in an oxide-VCSEL is presented. A comparison of the tensile-strained, unstrained, and compressive-strained diffusion masks utilized to fabricate disorder-defined VCSELs designed for single-fundamental-mode operation is also investigated. Lastly, the strain-controlled disorder-defined apertures designed for single-fundamental-mode emission is then extended to achieve single-polarization state emission. Through designing an asymmetric disorder-defined aperture, the symmetrical threshold modal gain profile is eliminated, thus leading to a preferential polarization state. This body of work demonstrates the high-performance capabilities of VCSELs utilizing strain-controlled disorder-defined apertures. Through tailoring the diffusion mask, performance characteristics such as high-power, single-mode, and single-polarization emission in an oxide-aperture VCSEL is achieved."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Strain-controlled disorder-defined apertures for optical mode control in vertical-cavity surface-emitting lasers"]}]}],"canonical_facts":{"dc:contributor":["Dallesasse, John M","Feng, Milton","Nahrstedt, Klara","Lee, Minjoo L"],"dc:creator":["Su, Patrick"],"dc:date":["2022-12","2022-08-23"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-12-01","The student, Patrick Su, accepted the attached license on 2022-08-21 at 00:21.","The student, Patrick Su, submitted this Dissertation for approval on 2022-08-21 at 00:32.","This Dissertation was approved for publication on 2022-08-23 at 09:47.","DSpace SAF Submission Ingestion Package generated from Vireo submission #18466 on 2023-04-12 at 11:34:14","Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become ubiquitous in modern consumer markets. Owing to their small footprint, circular-beam profile, on-wafer probing capability, and high reliability, VCSELs have been widely deployed for optical transceivers and consumer facial recognition systems. In the advent of emerging applications such as autonomous driving, AR/VR systems, and automated robotics, high-power 2D VCSEL arrays are being used as the premier illumination source for optical depth sensing modules. Through the initiation of Zn diffusion, impurity-induced disordering (IID) has been demonstrated to enable optical mode control and increased modulation frequencies, and provide carrier and photon confinement in vertical-cavity surface-emitting lasers. While disordering provides a wafer-scale method of improving device performance, the regions of disordering must be carefully controlled. Adverse effects can overshadow the benefits of disordering if it is not properly managed. Due to the isotropic nature of diffusion, undesirable lateral undercutting can occur during deep disordering processes where the severity of this effect is defined by the initial diffusion front formed. In this work, the fine control of Zn diffusion fronts in apertures formed using impurity-induced disordering is presented. By tailoring the diffusion mask strain, the diffusion front curvature of the impurity-induced disordering aperture can be controlled. Through modifying the composition of SiN$_{x}$ diffusion masks, various film stresses can be achieved. When employed for disordering, these form a variety of disordering apertures with differing diffusion fronts. Through utilizing tensile-strained diffusion masks, a disordering front with reduced lateral and enhanced vertical disordering is formed. Conversely, a compressive-strained diffusion mask yields a disordering front with enhanced lateral and reduced vertical disordering. Tensile-strained diffusion masks yield the most desirable disordering front profile, as it enables maximum higher-order mode suppression while mitigating the encroachement of the disordering front onto the fundamental-mode. Using tensile-strained diffusion masks, record high-power single-fundamnetal-mode emission in an oxide-VCSEL is presented. A comparison of the tensile-strained, unstrained, and compressive-strained diffusion masks utilized to fabricate disorder-defined VCSELs designed for single-fundamental-mode operation is also investigated. Lastly, the strain-controlled disorder-defined apertures designed for single-fundamental-mode emission is then extended to achieve single-polarization state emission. Through designing an asymmetric disorder-defined aperture, the symmetrical threshold modal gain profile is eliminated, thus leading to a preferential polarization state. This body of work demonstrates the high-performance capabilities of VCSELs utilizing strain-controlled disorder-defined apertures. Through tailoring the diffusion mask, performance characteristics such as high-power, single-mode, and single-polarization emission in an oxide-aperture VCSEL is achieved."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/117524"],"dc:language":["en","eng"],"dc:rights":["@2022 Patrick Su"],"dc:subject":["Vertical-cavity surface-emitting lasers","impurity-induced disordering","single-fundamental-mode","optical mode-control"],"dc:title":["Strain-controlled disorder-defined apertures for optical mode control in vertical-cavity surface-emitting lasers"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:56Z"}