{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/116196"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/116196","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Modeling and simulation of III-nitride devices and circuits for next generation communications and quantum computing","abstract":"Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-11-15 without embargo terms","abstract_html":"Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-11-15 without embargo terms","abstract_has_math":false,"creators":["Li, Kexin"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Rakheja, Shaloo","Bayram, Can","Rosenbaum, Elyse","Li, Xiuling"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2022,"date_issued":"2022-08","date_published":"2022-08","updated_at":"2026-07-22T22:24:55Z","subjects":["III-nitride","compact modeling","HEMT","quasi-ballistic","PCSS","NDM","cryogenic","quantum computing"],"languages":["en","eng"],"rights":["Copyright 2022 Kexin Li"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/116196","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rakheja, Shaloo","Bayram, Can","Rosenbaum, Elyse","Li, Xiuling"]},{"key":"dc:creator","label":"Author","values":["Li, Kexin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2022-08","2022-07-12"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["III-nitride","compact modeling","HEMT","quasi-ballistic","PCSS","NDM","cryogenic","quantum computing"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2022 Kexin Li"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/116196"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-11-15 without embargo terms","The student, Kexin Li, accepted the attached license on 2022-07-08 at 00:19.","The student, Kexin Li, submitted this Dissertation for approval on 2022-07-09 at 08:20.","This Dissertation was approved for publication on 2022-07-12 at 13:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #18182 on 2022-11-15 at 17:38:19","Next-generation wireless communication technology targeting significantly faster transformation will soon work in the wavelength ranges above 100 GHz. As an important part of wireless communication systems, the development of radio frequency (RF) devices and circuits, has been progressing rapidly to support the realization of the next-generation network. (1) In the past decade, III-nitride based high electron mobility transistors (HEMTs) have emerged as promising semiconductor devices for high-frequency, high-power applications, outperforming alternative Si and GaAs HEMTs. For predicting the physical behavior of these devices and to support circuit level simulations, a computationally efficient analytic description of the HEMTs behavior is required. The first contribution of this thesis introduces the development of a Landauer-Boltzmann based compact model for ultra-scaled III-nitride HEMTs in which carrier transport is expected to be quasi-ballistic. The compact model can further be used to understand and analyze several reliability issues related to GaN-based HEMTs. (2) Taking advantage of the negative differential mobility (NDM) phenomena, laser-driven photoconductive semiconductor switches (PCSS) built with GaN can theoretically achieve speed (at frequencies approaching 1 THz) and power (a watt or more) much higher than existing photoconductive devices. In the second part of the thesis, GaN-based PCSS modeling and simulation will be discussed. The modeling and simulation framework can provide guidance to experiments, reduce costs of test structures, improve the turnaround and success rate of laboratory tests, and enable the correct interpretation of experimental data. Besides wireless communication, quantum computing has been speculated to be the next major revolution in computational technology. Notably, quantum computers require high performance RF electronics for the reliable control and readout of quantum bits (qubits) in a cryogenic environment. Operating microelectronics under extremely low temperatures is challenging. On the other hand, due to its polarization-induced doping, GaN-based HEMTs can overcome the carrier freeze-out challenges and operate in very low temperature environments. The last piece of this thesis will show how our compact model built from the first principles can further provide insights into the design of cryogenic GaN HEMTs to enable reliable quantum computing."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Modeling and simulation of III-nitride devices and circuits for next generation communications and quantum computing"]}]}],"canonical_facts":{"dc:contributor":["Rakheja, Shaloo","Bayram, Can","Rosenbaum, Elyse","Li, Xiuling"],"dc:creator":["Li, Kexin"],"dc:date":["2022-08","2022-07-12"],"dc:description":["Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-11-15 without embargo terms","The student, Kexin Li, accepted the attached license on 2022-07-08 at 00:19.","The student, Kexin Li, submitted this Dissertation for approval on 2022-07-09 at 08:20.","This Dissertation was approved for publication on 2022-07-12 at 13:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #18182 on 2022-11-15 at 17:38:19","Next-generation wireless communication technology targeting significantly faster transformation will soon work in the wavelength ranges above 100 GHz. As an important part of wireless communication systems, the development of radio frequency (RF) devices and circuits, has been progressing rapidly to support the realization of the next-generation network. (1) In the past decade, III-nitride based high electron mobility transistors (HEMTs) have emerged as promising semiconductor devices for high-frequency, high-power applications, outperforming alternative Si and GaAs HEMTs. For predicting the physical behavior of these devices and to support circuit level simulations, a computationally efficient analytic description of the HEMTs behavior is required. The first contribution of this thesis introduces the development of a Landauer-Boltzmann based compact model for ultra-scaled III-nitride HEMTs in which carrier transport is expected to be quasi-ballistic. The compact model can further be used to understand and analyze several reliability issues related to GaN-based HEMTs. (2) Taking advantage of the negative differential mobility (NDM) phenomena, laser-driven photoconductive semiconductor switches (PCSS) built with GaN can theoretically achieve speed (at frequencies approaching 1 THz) and power (a watt or more) much higher than existing photoconductive devices. In the second part of the thesis, GaN-based PCSS modeling and simulation will be discussed. The modeling and simulation framework can provide guidance to experiments, reduce costs of test structures, improve the turnaround and success rate of laboratory tests, and enable the correct interpretation of experimental data. Besides wireless communication, quantum computing has been speculated to be the next major revolution in computational technology. Notably, quantum computers require high performance RF electronics for the reliable control and readout of quantum bits (qubits) in a cryogenic environment. Operating microelectronics under extremely low temperatures is challenging. On the other hand, due to its polarization-induced doping, GaN-based HEMTs can overcome the carrier freeze-out challenges and operate in very low temperature environments. The last piece of this thesis will show how our compact model built from the first principles can further provide insights into the design of cryogenic GaN HEMTs to enable reliable quantum computing."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/116196"],"dc:language":["en","eng"],"dc:rights":["Copyright 2022 Kexin Li"],"dc:subject":["III-nitride","compact modeling","HEMT","quasi-ballistic","PCSS","NDM","cryogenic","quantum computing"],"dc:title":["Modeling and simulation of III-nitride devices and circuits for next generation communications and quantum computing"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:55Z"}