Design, defect reduction, and dislocation tolerance of red lasers on Si (001)
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-05-01
Quantum dot laser, Quantum well laser, Epitaxial laser on silicon, Photonic integrated circuits, Defects, Optoelectronics, Material growth, Epitaxy, Material characterization, III-V materials, Molecular Beam Epitaxy
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign