{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/115740"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/115740","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Design, defect reduction, and dislocation tolerance of red lasers on Si (001)","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-05-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-05-01","abstract_has_math":false,"creators":["Dhingra, Pankul"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Lee, Minjoo L","Dallesasse, John M","Choquette, Kent D","Vlasov, Yurii"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2022,"date_issued":"2022-05","date_published":"2022-05","updated_at":"2026-07-22T22:24:55Z","subjects":["Quantum dot laser","Quantum well laser","Epitaxial laser on silicon","Photonic integrated circuits","Defects","Optoelectronics","Material growth","Epitaxy","Material characterization","III-V materials","Molecular Beam Epitaxy"],"languages":["en","eng"],"rights":["Copyright 2022 Pankul Dhingra"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/115740","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Lee, Minjoo L","Dallesasse, John M","Choquette, Kent D","Vlasov, Yurii"]},{"key":"dc:creator","label":"Author","values":["Dhingra, Pankul"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2022-05","2022-04-22"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Quantum dot laser","Quantum well laser","Epitaxial laser on silicon","Photonic integrated circuits","Defects","Optoelectronics","Material growth","Epitaxy","Material characterization","III-V materials","Molecular Beam Epitaxy"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2022 Pankul Dhingra"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/115740"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-05-01","The student, Pankul Dhingra, accepted the attached license on 2022-04-21 at 16:34.","The student, Pankul Dhingra, submitted this Dissertation for approval on 2022-04-21 at 16:45.","This Dissertation was approved for publication on 2022-04-22 at 12:44.","DSpace SAF Submission Ingestion Package generated from Vireo submission #17894 on 2022-11-11 at 12:58:04","Monolithic integration of III-V optoelectronic devices with silicon nitride photonics technology could open a wide range of on-chip applications spanning a wide wavelength range of 400 – 4000 nm. The wavelength palette of III-V lasers on Si spans 400 nm – 11 μm with the development of nitride, arsenide and antimonide quantum well (QW) and quantum dot (QD) lasers, leaving a crucial gap in the development of red lasers on Si with 630 – 750 nm emission using phosphide active region. In this dissertation, we demonstrate the development of InGaP QW and InP QD lasers on GaAs and Si (001) substrates, integrated on silicon nitride photonic integrated circuits using molecular beam epitaxy. It is found that InP QDs on Si (001) show a photoluminescence intensity similar to counterparts grown on GaAs (001), despite a threading dislocation density (TDD) of 3.3×107 cm-2. In contrast, InGaP QWs on Si (001), with the same TDD, show 9× degradation in PL intensity compared to QWs on GaAs. We demonstrate post-growth annealing as an essential step towards demonstration of MBE-grown phosphide lasers, with InGaP single quantum well (SQW) and InP multiple quantum dot (MQD) lasers on GaAs operating with a threshold current density (Jth) of 170 A/cm2 and 230 A/cm2 on GaAs (001), the lowest continuous wave (CW) Jth by any growth technique. We also demonstrate strategies to reduce the TDD of epitaxial GaAs/Si from > 4×108 cm-2 to 6×106 cm-2 by using dislocation filtering techniques. Utilizing low-TDD GaAs/Si templates and low-Jth active region design, we show the first CW- room temperature (RT) InGaP SQW and InP MQD lasers on GaAs/Si (001) with Jth of 550 A/cm2 and 690 A/cm2, respectively, the lowest reported to the best of our knowledge. The higher dislocation tolerance of phosphide lasers, compared to arsenide lasers, can be attributed to the low carrier diffusivity in phosphides. The dissertation also presents preliminary results on the integration of visible optoelectronic devices on photonic integrated circuits utilizing silicon nitride waveguides on Si substrates."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Design, defect reduction, and dislocation tolerance of red lasers on Si (001)"]}]}],"canonical_facts":{"dc:contributor":["Lee, Minjoo L","Dallesasse, John M","Choquette, Kent D","Vlasov, Yurii"],"dc:creator":["Dhingra, Pankul"],"dc:date":["2022-05","2022-04-22"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-05-01","The student, Pankul Dhingra, accepted the attached license on 2022-04-21 at 16:34.","The student, Pankul Dhingra, submitted this Dissertation for approval on 2022-04-21 at 16:45.","This Dissertation was approved for publication on 2022-04-22 at 12:44.","DSpace SAF Submission Ingestion Package generated from Vireo submission #17894 on 2022-11-11 at 12:58:04","Monolithic integration of III-V optoelectronic devices with silicon nitride photonics technology could open a wide range of on-chip applications spanning a wide wavelength range of 400 – 4000 nm. The wavelength palette of III-V lasers on Si spans 400 nm – 11 μm with the development of nitride, arsenide and antimonide quantum well (QW) and quantum dot (QD) lasers, leaving a crucial gap in the development of red lasers on Si with 630 – 750 nm emission using phosphide active region. In this dissertation, we demonstrate the development of InGaP QW and InP QD lasers on GaAs and Si (001) substrates, integrated on silicon nitride photonic integrated circuits using molecular beam epitaxy. It is found that InP QDs on Si (001) show a photoluminescence intensity similar to counterparts grown on GaAs (001), despite a threading dislocation density (TDD) of 3.3×107 cm-2. In contrast, InGaP QWs on Si (001), with the same TDD, show 9× degradation in PL intensity compared to QWs on GaAs. We demonstrate post-growth annealing as an essential step towards demonstration of MBE-grown phosphide lasers, with InGaP single quantum well (SQW) and InP multiple quantum dot (MQD) lasers on GaAs operating with a threshold current density (Jth) of 170 A/cm2 and 230 A/cm2 on GaAs (001), the lowest continuous wave (CW) Jth by any growth technique. We also demonstrate strategies to reduce the TDD of epitaxial GaAs/Si from > 4×108 cm-2 to 6×106 cm-2 by using dislocation filtering techniques. Utilizing low-TDD GaAs/Si templates and low-Jth active region design, we show the first CW- room temperature (RT) InGaP SQW and InP MQD lasers on GaAs/Si (001) with Jth of 550 A/cm2 and 690 A/cm2, respectively, the lowest reported to the best of our knowledge. The higher dislocation tolerance of phosphide lasers, compared to arsenide lasers, can be attributed to the low carrier diffusivity in phosphides. The dissertation also presents preliminary results on the integration of visible optoelectronic devices on photonic integrated circuits utilizing silicon nitride waveguides on Si substrates."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/115740"],"dc:language":["en","eng"],"dc:rights":["Copyright 2022 Pankul Dhingra"],"dc:subject":["Quantum dot laser","Quantum well laser","Epitaxial laser on silicon","Photonic integrated circuits","Defects","Optoelectronics","Material growth","Epitaxy","Material characterization","III-V materials","Molecular Beam Epitaxy"],"dc:title":["Design, defect reduction, and dislocation tolerance of red lasers on Si (001)"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:55Z"}