{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/113135"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/113135","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Development of InP DHBT for 5G millimeter-wave power amplifier and GaAs photodetector for 50 Gb/s optical link","abstract":"The high-speed optical transceivers require high-speed photodetector to be paired with high-speed vertical-cavity surface-emitting lasers (VCSELs) for short-range transmission at 850 nm. High-speed photodetector holds the key to higher data rate and lower energy consumption, which can help resolve the rising data traffic with high power efficiency. As for wireless communication, Indium phosphide (InP) heterojunction bipolar transistors (HBTs) are widely deployed in high-speed mixed signaling and radio-frequency (RF) instruments because of their outstanding ability to amplify the signals at high-speed bandwidth. Moreover, inherent material properties of InP such as high durability of the breakdown field and fast electron drift velocity make this material one of the suitable candidates when it comes to power amplifier applications within millimeter-wave spectrums. In this work, the development of the 50 Gb/s P-i-N photodetector Type-II InP DHBT for 5G power amplifier application will be presented and discussed. The development work of the photodetector includes the design consideration and process optimization, the dark current and bandwidth characterization of the fabricated device, followed by the impulse response measurement and microwave modeling. The development of Type-II InP DHBT consists of the review of the previous InP DHBT works at UIUC, plasma-enhanced InP dry-etching process development, DC and small-signal characterization, physical parameter extraction and ADS microwave modeling.","abstract_html":"The high-speed optical transceivers require high-speed photodetector to be paired with high-speed vertical-cavity surface-emitting lasers (VCSELs) for short-range transmission at 850 nm. High-speed photodetector holds the key to higher data rate and lower energy consumption, which can help resolve the rising data traffic with high power efficiency. As for wireless communication, Indium phosphide (InP) heterojunction bipolar transistors (HBTs) are widely deployed in high-speed mixed signaling and radio-frequency (RF) instruments because of their outstanding ability to amplify the signals at high-speed bandwidth. Moreover, inherent material properties of InP such as high durability of the breakdown field and fast electron drift velocity make this material one of the suitable candidates when it comes to power amplifier applications within millimeter-wave spectrums. In this work, the development of the 50 Gb/s P-i-N photodetector Type-II InP DHBT for 5G power amplifier application will be presented and discussed. The development work of the photodetector includes the design consideration and process optimization, the dark current and bandwidth characterization of the fabricated device, followed by the impulse response measurement and microwave modeling. The development of Type-II InP DHBT consists of the review of the previous InP DHBT works at UIUC, plasma-enhanced InP dry-etching process development, DC and small-signal characterization, physical parameter extraction and ADS microwave modeling.","abstract_has_math":false,"creators":["Peng, Yu-Ting"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Dallesasse, John M","Jin, Jianming","Dragic, Peter D"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2022,"date_issued":"2022-01-12T22:34:50Z","date_published":"2022-01-12T22:34:50Z","updated_at":"2026-07-22T22:24:53Z","subjects":["Type-II InP, power amplifier, millimeter-wave, 5G, photodetector, high speed optical link"],"languages":["en"],"rights":["Copyright 2021 Yu-Ting Peng"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/113135","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Dallesasse, John M","Jin, Jianming","Dragic, Peter D"]},{"key":"dc:creator","label":"Author","values":["Peng, Yu-Ting"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2022-01-12T22:34:50Z","2024-01-12T22:35:30Z","2021-07-01","2021-08"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Type-II InP, power amplifier, millimeter-wave, 5G, photodetector, high speed optical link"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2021 Yu-Ting Peng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/113135"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The high-speed optical transceivers require high-speed photodetector to be paired with high-speed vertical-cavity surface-emitting lasers (VCSELs) for short-range transmission at 850 nm. High-speed photodetector holds the key to higher data rate and lower energy consumption, which can help resolve the rising data traffic with high power efficiency. As for wireless communication, Indium phosphide (InP) heterojunction bipolar transistors (HBTs) are widely deployed in high-speed mixed signaling and radio-frequency (RF) instruments because of their outstanding ability to amplify the signals at high-speed bandwidth. Moreover, inherent material properties of InP such as high durability of the breakdown field and fast electron drift velocity make this material one of the suitable candidates when it comes to power amplifier applications within millimeter-wave spectrums. In this work, the development of the 50 Gb/s P-i-N photodetector Type-II InP DHBT for 5G power amplifier application will be presented and discussed. The development work of the photodetector includes the design consideration and process optimization, the dark current and bandwidth characterization of the fabricated device, followed by the impulse response measurement and microwave modeling. The development of Type-II InP DHBT consists of the review of the previous InP DHBT works at UIUC, plasma-enhanced InP dry-etching process development, DC and small-signal characterization, physical parameter extraction and ADS microwave modeling.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-08-01","The student, Yu-Ting Peng, accepted the attached license on 2021-06-30 at 19:00.","The student, Yu-Ting Peng, submitted this Dissertation for approval on 2021-06-30 at 19:20.","This Dissertation was approved for publication on 2021-07-01 at 17:47.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16741 on 2022-01-12 at 12:52:48","Made available in DSpace on 2022-01-12T22:34:50Z (GMT). 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High-speed photodetector holds the key to higher data rate and lower energy consumption, which can help resolve the rising data traffic with high power efficiency. As for wireless communication, Indium phosphide (InP) heterojunction bipolar transistors (HBTs) are widely deployed in high-speed mixed signaling and radio-frequency (RF) instruments because of their outstanding ability to amplify the signals at high-speed bandwidth. Moreover, inherent material properties of InP such as high durability of the breakdown field and fast electron drift velocity make this material one of the suitable candidates when it comes to power amplifier applications within millimeter-wave spectrums. In this work, the development of the 50 Gb/s P-i-N photodetector Type-II InP DHBT for 5G power amplifier application will be presented and discussed. The development work of the photodetector includes the design consideration and process optimization, the dark current and bandwidth characterization of the fabricated device, followed by the impulse response measurement and microwave modeling. The development of Type-II InP DHBT consists of the review of the previous InP DHBT works at UIUC, plasma-enhanced InP dry-etching process development, DC and small-signal characterization, physical parameter extraction and ADS microwave modeling.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-08-01","The student, Yu-Ting Peng, accepted the attached license on 2021-06-30 at 19:00.","The student, Yu-Ting Peng, submitted this Dissertation for approval on 2021-06-30 at 19:20.","This Dissertation was approved for publication on 2021-07-01 at 17:47.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16741 on 2022-01-12 at 12:52:48","Made available in DSpace on 2022-01-12T22:34:50Z (GMT). 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