{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/113107"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/113107","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Modeling and optimization of the transistor laser operation","abstract":"This thesis describes theoretically the operation of the Transistor Lasers (TLs) from two perspectives. First, the charge control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the electrical gain and produce an optical gain. Based on the analysis on the charge control model, the optical gain can be modulated by the cladding structure of the base. Second, the radiative recombination is analyzed from the first principles. The results indicate that the radiative recombination saturates in degenerately doped cases, where Auger recombination becomes dominant and deteriorates the quantum efficiency. Finally, this thesis proposes a novel turn-off mechanism for the TLs, which achieves good efficiency and fast response at the same time.","abstract_html":"This thesis describes theoretically the operation of the Transistor Lasers (TLs) from two perspectives. First, the charge control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the electrical gain and produce an optical gain. Based on the analysis on the charge control model, the optical gain can be modulated by the cladding structure of the base. Second, the radiative recombination is analyzed from the first principles. The results indicate that the radiative recombination saturates in degenerately doped cases, where Auger recombination becomes dominant and deteriorates the quantum efficiency. Finally, this thesis proposes a novel turn-off mechanism for the TLs, which achieves good efficiency and fast response at the same time.","abstract_has_math":false,"creators":["Wu, Bohao"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Leburton, Jean-Pierre"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2022,"date_issued":"2022-01-12T21:47:04Z","date_published":"2022-01-12T21:47:04Z","updated_at":"2026-07-22T22:24:53Z","subjects":["Transistor laser, turn-off mechanism"],"languages":["en"],"rights":["Copyright 2021 Bohao Wu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/113107","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Leburton, Jean-Pierre"]},{"key":"dc:creator","label":"Author","values":["Wu, Bohao"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2022-01-12T21:47:04Z","2021-07-23","2021-08"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Transistor laser, turn-off mechanism"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2021 Bohao Wu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/113107"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis describes theoretically the operation of the Transistor Lasers (TLs) from two perspectives. First, the charge control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the electrical gain and produce an optical gain. Based on the analysis on the charge control model, the optical gain can be modulated by the cladding structure of the base. Second, the radiative recombination is analyzed from the first principles. The results indicate that the radiative recombination saturates in degenerately doped cases, where Auger recombination becomes dominant and deteriorates the quantum efficiency. Finally, this thesis proposes a novel turn-off mechanism for the TLs, which achieves good efficiency and fast response at the same time.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-01-12 without embargo terms","The student, Bohao Wu, accepted the attached license on 2021-07-23 at 12:07.","The student, Bohao Wu, submitted this Thesis for approval on 2021-07-23 at 12:13.","This Thesis was approved for publication on 2021-07-23 at 13:31.","DSpace SAF Submission Ingestion Package generated from Vireo submission #17085 on 2022-01-12 at 12:47:01","Made available in DSpace on 2022-01-12T21:47:04Z (GMT). No. of bitstreams: 2 WU-THESIS-2021.pdf: 853906 bytes, checksum: 0ff2aa0217b4d1fd82cc52ef47327004 (MD5) LICENSE.txt: 4205 bytes, checksum: b0ad14604b3ce109d6d574aef11d2328 (MD5) Previous issue date: 2021-07-23"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Modeling and optimization of the transistor laser operation"]}]}],"canonical_facts":{"dc:contributor":["Leburton, Jean-Pierre"],"dc:creator":["Wu, Bohao"],"dc:date":["2022-01-12T21:47:04Z","2021-07-23","2021-08"],"dc:description":["This thesis describes theoretically the operation of the Transistor Lasers (TLs) from two perspectives. First, the charge control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the electrical gain and produce an optical gain. Based on the analysis on the charge control model, the optical gain can be modulated by the cladding structure of the base. Second, the radiative recombination is analyzed from the first principles. The results indicate that the radiative recombination saturates in degenerately doped cases, where Auger recombination becomes dominant and deteriorates the quantum efficiency. Finally, this thesis proposes a novel turn-off mechanism for the TLs, which achieves good efficiency and fast response at the same time.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-01-12 without embargo terms","The student, Bohao Wu, accepted the attached license on 2021-07-23 at 12:07.","The student, Bohao Wu, submitted this Thesis for approval on 2021-07-23 at 12:13.","This Thesis was approved for publication on 2021-07-23 at 13:31.","DSpace SAF Submission Ingestion Package generated from Vireo submission #17085 on 2022-01-12 at 12:47:01","Made available in DSpace on 2022-01-12T21:47:04Z (GMT). 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