{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/110850"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/110850","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication","abstract":"The development of high-performance electronics in the past few decades has necessitated the scaling and precise fabrication of device elements and features down to the nanometer level. Top-down fabrication modules in semiconductor processing including etching have been extensively explored and implemented for a wide variety of device structures. One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes a metal catalyst in order to enhance directional etching of a semiconductor. MacEtch has found its place in etching a wide variety of semiconductor materials, which expands its application beyond Si including direct band gap materials for optoelectronics and photonics. However, MacEtch of InGaAsP, an important quaternary semiconductor for long wavelength communications, is yet to be reported. This thesis demonstrates the fabrication of InGaAsP gratings for distributed feedback (DFB) lasers by MacEtch as well as antireflection textured GaAs photodiodes incorporating graphene quantum dots (GQDs). MacEtch behavior of InGaAsP in H2SO4 and H2O2 is dependent on the crystal orientation and material of the metal catalyst, as well as the stoichiometric composition of InGaAsP. The textured GaAs photodiodes, with GQDs self‐embedded in the monolithically integrated transparent graphene electrode, demonstrate a photocurrent enhancement of 22 times and a photoresponsivity of 25 times compared with the planar counterpart.","abstract_html":"The development of high-performance electronics in the past few decades has necessitated the scaling and precise fabrication of device elements and features down to the nanometer level. Top-down fabrication modules in semiconductor processing including etching have been extensively explored and implemented for a wide variety of device structures. One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes a metal catalyst in order to enhance directional etching of a semiconductor. MacEtch has found its place in etching a wide variety of semiconductor materials, which expands its application beyond Si including direct band gap materials for optoelectronics and photonics. However, MacEtch of InGaAsP, an important quaternary semiconductor for long wavelength communications, is yet to be reported. This thesis demonstrates the fabrication of InGaAsP gratings for distributed feedback (DFB) lasers by MacEtch as well as antireflection textured GaAs photodiodes incorporating graphene quantum dots (GQDs). MacEtch behavior of InGaAsP in H2SO4 and H2O2 is dependent on the crystal orientation and material of the metal catalyst, as well as the stoichiometric composition of InGaAsP. The textured GaAs photodiodes, with GQDs self‐embedded in the monolithically integrated transparent graphene electrode, demonstrate a photocurrent enhancement of 22 times and a photoresponsivity of 25 times compared with the planar counterpart.","abstract_has_math":false,"creators":["Namiki, Shunya"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Li, Xiuling"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2021,"date_issued":"2021-09-17T04:06:51Z","date_published":"2021-09-17T04:06:51Z","updated_at":"2026-07-22T22:24:52Z","subjects":["Semiconductor","nanofabrication","metal-assisted chemical etching","etching","InGaAsP","GaAs","graphene"],"languages":["en"],"rights":["Copyright 2021 Shunya Namiki"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/110850","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling"]},{"key":"dc:creator","label":"Author","values":["Namiki, Shunya"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2021-09-17T04:06:51Z","2023-09-17T04:07:01Z","2021-04-26","2021-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Semiconductor","nanofabrication","metal-assisted chemical etching","etching","InGaAsP","GaAs","graphene"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2021 Shunya Namiki"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/110850"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The development of high-performance electronics in the past few decades has necessitated the scaling and precise fabrication of device elements and features down to the nanometer level. Top-down fabrication modules in semiconductor processing including etching have been extensively explored and implemented for a wide variety of device structures. One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes a metal catalyst in order to enhance directional etching of a semiconductor. MacEtch has found its place in etching a wide variety of semiconductor materials, which expands its application beyond Si including direct band gap materials for optoelectronics and photonics. However, MacEtch of InGaAsP, an important quaternary semiconductor for long wavelength communications, is yet to be reported. This thesis demonstrates the fabrication of InGaAsP gratings for distributed feedback (DFB) lasers by MacEtch as well as antireflection textured GaAs photodiodes incorporating graphene quantum dots (GQDs). MacEtch behavior of InGaAsP in H2SO4 and H2O2 is dependent on the crystal orientation and material of the metal catalyst, as well as the stoichiometric composition of InGaAsP. The textured GaAs photodiodes, with GQDs self‐embedded in the monolithically integrated transparent graphene electrode, demonstrate a photocurrent enhancement of 22 times and a photoresponsivity of 25 times compared with the planar counterpart.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2023-05-01","The student, Shunya Namiki, accepted the attached license on 2021-04-22 at 17:07.","The student, Shunya Namiki, submitted this Thesis for approval on 2021-04-22 at 17:24.","This Thesis was approved for publication on 2021-04-26 at 13:43.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16514 on 2021-09-16 at 20:13:59","Made available in DSpace on 2021-09-17T04:06:51Z (GMT). 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Top-down fabrication modules in semiconductor processing including etching have been extensively explored and implemented for a wide variety of device structures. One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes a metal catalyst in order to enhance directional etching of a semiconductor. MacEtch has found its place in etching a wide variety of semiconductor materials, which expands its application beyond Si including direct band gap materials for optoelectronics and photonics. However, MacEtch of InGaAsP, an important quaternary semiconductor for long wavelength communications, is yet to be reported. This thesis demonstrates the fabrication of InGaAsP gratings for distributed feedback (DFB) lasers by MacEtch as well as antireflection textured GaAs photodiodes incorporating graphene quantum dots (GQDs). MacEtch behavior of InGaAsP in H2SO4 and H2O2 is dependent on the crystal orientation and material of the metal catalyst, as well as the stoichiometric composition of InGaAsP. The textured GaAs photodiodes, with GQDs self‐embedded in the monolithically integrated transparent graphene electrode, demonstrate a photocurrent enhancement of 22 times and a photoresponsivity of 25 times compared with the planar counterpart.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2023-05-01","The student, Shunya Namiki, accepted the attached license on 2021-04-22 at 17:07.","The student, Shunya Namiki, submitted this Thesis for approval on 2021-04-22 at 17:24.","This Thesis was approved for publication on 2021-04-26 at 13:43.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16514 on 2021-09-16 at 20:13:59","Made available in DSpace on 2021-09-17T04:06:51Z (GMT). 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