{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/110734"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/110734","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Condition monitoring of SiC MOSFETs on LLC resonant converter","abstract":"Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency applications, which results in a much higher power density than Si-based power converters. The reliability of SiC devices, however, remains a significant hindrance to their wide adoption in power electronics in transportation, industry and military applications. Real-time condition monitoring of SiC devices in SiC-based power converters addresses the reliability issues by providing an early sign of potential failure. Since one of the most consistent failure precursors of a degraded SiC MOSFET is an increase of gate leakage current, a circuitry is developed to track and estimate the on-state gate leakage current of the device during operation. To demonstrate the functionality of the proposed method, an LLC full-bridge resonant converter that operates at a medium voltage and high switching frequency was designed and used to obtain the experimental results. This converter will operate at various duty ratios, DC-link voltages, switching frequencies and output loads to show the consistency and accuracy of the proposed condition monitoring method. With proper calibration, this cost-effective method obtains an accurate gate leakage estimation which opens opportunities to perform prognostic and health monitoring of SiC devices.","abstract_html":"Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency applications, which results in a much higher power density than Si-based power converters. The reliability of SiC devices, however, remains a significant hindrance to their wide adoption in power electronics in transportation, industry and military applications. Real-time condition monitoring of SiC devices in SiC-based power converters addresses the reliability issues by providing an early sign of potential failure. Since one of the most consistent failure precursors of a degraded SiC MOSFET is an increase of gate leakage current, a circuitry is developed to track and estimate the on-state gate leakage current of the device during operation. To demonstrate the functionality of the proposed method, an LLC full-bridge resonant converter that operates at a medium voltage and high switching frequency was designed and used to obtain the experimental results. This converter will operate at various duty ratios, DC-link voltages, switching frequencies and output loads to show the consistency and accuracy of the proposed condition monitoring method. With proper calibration, this cost-effective method obtains an accurate gate leakage estimation which opens opportunities to perform prognostic and health monitoring of SiC devices.","abstract_has_math":false,"creators":["Wang, Patrick John"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Banerjee, Arijit"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2021,"date_issued":"2021-09-17T02:34:46Z","date_published":"2021-09-17T02:34:46Z","updated_at":"2026-07-22T22:24:52Z","subjects":["Silicon Carbide","MOSFET","Reliability","Condition Monitoring","DC-DC converter","Power Electronics","Gate Driver Circuits","LLC resonant converter"],"languages":["en"],"rights":["Copyright 2021 Patrick Wang"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/110734","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Banerjee, Arijit"]},{"key":"dc:creator","label":"Author","values":["Wang, Patrick John"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2021-09-17T02:34:46Z","2023-09-17T02:34:57Z","2021-04-26","2021-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Silicon Carbide","MOSFET","Reliability","Condition Monitoring","DC-DC converter","Power Electronics","Gate Driver Circuits","LLC resonant converter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2021 Patrick Wang"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/110734"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency applications, which results in a much higher power density than Si-based power converters. The reliability of SiC devices, however, remains a significant hindrance to their wide adoption in power electronics in transportation, industry and military applications. Real-time condition monitoring of SiC devices in SiC-based power converters addresses the reliability issues by providing an early sign of potential failure. Since one of the most consistent failure precursors of a degraded SiC MOSFET is an increase of gate leakage current, a circuitry is developed to track and estimate the on-state gate leakage current of the device during operation. To demonstrate the functionality of the proposed method, an LLC full-bridge resonant converter that operates at a medium voltage and high switching frequency was designed and used to obtain the experimental results. This converter will operate at various duty ratios, DC-link voltages, switching frequencies and output loads to show the consistency and accuracy of the proposed condition monitoring method. With proper calibration, this cost-effective method obtains an accurate gate leakage estimation which opens opportunities to perform prognostic and health monitoring of SiC devices.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-05-01","The student, Patrick Wang, accepted the attached license on 2021-04-23 at 02:17.","The student, Patrick Wang, submitted this Thesis for approval on 2021-04-23 at 02:49.","This Thesis was approved for publication on 2021-04-26 at 14:56.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16521 on 2021-09-16 at 17:05:03","Made available in DSpace on 2021-09-17T02:34:46Z (GMT). No. of bitstreams: 2 WANG-THESIS-2021.pdf: 3989448 bytes, checksum: 4c01caab9984d3ea29b899ded9a62fea (MD5) LICENSE.txt: 4209 bytes, checksum: 779e158b37117bacb25c6a95cdd9f559 (MD5) Previous issue date: 2021-04-26","Embargo set by: Seth Robbins for item 118577 Lift date: 2023-09-17T02:34:57Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Condition monitoring of SiC MOSFETs on LLC resonant converter"]}]}],"canonical_facts":{"dc:contributor":["Banerjee, Arijit"],"dc:creator":["Wang, Patrick John"],"dc:date":["2021-09-17T02:34:46Z","2023-09-17T02:34:57Z","2021-04-26","2021-05"],"dc:description":["Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency applications, which results in a much higher power density than Si-based power converters. The reliability of SiC devices, however, remains a significant hindrance to their wide adoption in power electronics in transportation, industry and military applications. Real-time condition monitoring of SiC devices in SiC-based power converters addresses the reliability issues by providing an early sign of potential failure. Since one of the most consistent failure precursors of a degraded SiC MOSFET is an increase of gate leakage current, a circuitry is developed to track and estimate the on-state gate leakage current of the device during operation. To demonstrate the functionality of the proposed method, an LLC full-bridge resonant converter that operates at a medium voltage and high switching frequency was designed and used to obtain the experimental results. This converter will operate at various duty ratios, DC-link voltages, switching frequencies and output loads to show the consistency and accuracy of the proposed condition monitoring method. With proper calibration, this cost-effective method obtains an accurate gate leakage estimation which opens opportunities to perform prognostic and health monitoring of SiC devices.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-05-01","The student, Patrick Wang, accepted the attached license on 2021-04-23 at 02:17.","The student, Patrick Wang, submitted this Thesis for approval on 2021-04-23 at 02:49.","This Thesis was approved for publication on 2021-04-26 at 14:56.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16521 on 2021-09-16 at 17:05:03","Made available in DSpace on 2021-09-17T02:34:46Z (GMT). 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