{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/110623"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/110623","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"High-voltage ESD PNP clamp simulation and design","abstract":"In this work high-voltage Electrostatic discharge (ESD) PNPs are studied through TCAD simulation and device measurement. PNPs for three different voltage classes, 16 V, 65 V, and 100 V, in a 0.5-µm Bipolar CMOS DMOS (BCD) technology are used as the context for the study. The PNPs are varied in choices of topology, layout parameters, and connection configuration to determine how to design an optimal ESD PNP. Analysis of an unexpected two-part on-resistance is discussed. A detailed setup for running TCAD simulations for ESD devices that operate in breakdown, such as the ESD PNP, is also presented. The choice of model selection, differences between 2-D and 3-D simulation, and techniques for proper transmission line pulse (TLP) simulation are discussed. Careful considerations are made to account for the inaccuracies of the simulated doping profiles.","abstract_html":"In this work high-voltage Electrostatic discharge (ESD) PNPs are studied through TCAD simulation and device measurement. PNPs for three different voltage classes, 16 V, 65 V, and 100 V, in a 0.5-µm Bipolar CMOS DMOS (BCD) technology are used as the context for the study. The PNPs are varied in choices of topology, layout parameters, and connection configuration to determine how to design an optimal ESD PNP. Analysis of an unexpected two-part on-resistance is discussed. A detailed setup for running TCAD simulations for ESD devices that operate in breakdown, such as the ESD PNP, is also presented. The choice of model selection, differences between 2-D and 3-D simulation, and techniques for proper transmission line pulse (TLP) simulation are discussed. Careful considerations are made to account for the inaccuracies of the simulated doping profiles.","abstract_has_math":false,"creators":["Shah, Milan"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Rosenbaum, Elyse"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2021,"date_issued":"2021-09-17T02:34:12Z","date_published":"2021-09-17T02:34:12Z","updated_at":"2026-07-22T22:24:52Z","subjects":["HV ESD","ESD Protection Devices","ESD PNPs","TCAD"],"languages":["en"],"rights":["Copyright 2021 Milan Shah"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/110623","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rosenbaum, Elyse"]},{"key":"dc:creator","label":"Author","values":["Shah, Milan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2021-09-17T02:34:12Z","2023-09-17T02:34:57Z","2021-01-11","2021-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["HV ESD","ESD Protection Devices","ESD PNPs","TCAD"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2021 Milan Shah"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/110623"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this work high-voltage Electrostatic discharge (ESD) PNPs are studied through TCAD simulation and device measurement. PNPs for three different voltage classes, 16 V, 65 V, and 100 V, in a 0.5-µm Bipolar CMOS DMOS (BCD) technology are used as the context for the study. The PNPs are varied in choices of topology, layout parameters, and connection configuration to determine how to design an optimal ESD PNP. Analysis of an unexpected two-part on-resistance is discussed. A detailed setup for running TCAD simulations for ESD devices that operate in breakdown, such as the ESD PNP, is also presented. The choice of model selection, differences between 2-D and 3-D simulation, and techniques for proper transmission line pulse (TLP) simulation are discussed. Careful considerations are made to account for the inaccuracies of the simulated doping profiles.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-05-01","The student, Milan Shah, accepted the attached license on 2021-01-08 at 12:37.","The student, Milan Shah, submitted this Thesis for approval on 2021-01-08 at 12:47.","This Thesis was approved for publication on 2021-01-11 at 08:56.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16143 on 2021-09-16 at 17:01:38","Made available in DSpace on 2021-09-17T02:34:12Z (GMT). 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PNPs for three different voltage classes, 16 V, 65 V, and 100 V, in a 0.5-µm Bipolar CMOS DMOS (BCD) technology are used as the context for the study. The PNPs are varied in choices of topology, layout parameters, and connection configuration to determine how to design an optimal ESD PNP. Analysis of an unexpected two-part on-resistance is discussed. A detailed setup for running TCAD simulations for ESD devices that operate in breakdown, such as the ESD PNP, is also presented. The choice of model selection, differences between 2-D and 3-D simulation, and techniques for proper transmission line pulse (TLP) simulation are discussed. Careful considerations are made to account for the inaccuracies of the simulated doping profiles.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-05-01","The student, Milan Shah, accepted the attached license on 2021-01-08 at 12:37.","The student, Milan Shah, submitted this Thesis for approval on 2021-01-08 at 12:47.","This Thesis was approved for publication on 2021-01-11 at 08:56.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16143 on 2021-09-16 at 17:01:38","Made available in DSpace on 2021-09-17T02:34:12Z (GMT). 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