{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/110415"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/110415","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Fabrication and performance of broad-area high power narrow linewidth semiconductor laser diodes","abstract":"This thesis presents the theoretical and experimental examination of broad-area, high-order, distributed feedback (DFB) grating, semiconductor laser diodes for the goal of manufacturably attaining longitudinal mode reduction. Through coupled-mode theory, the coupling coefficient, the reflectivity, and the laser emission linewidth resulting from a refractive index grating are predicted. A comparison is made between lasers with coated and uncoated facets, demonstrating that the impact of DFB gratings is enhanced by facet coating. Both surface-etched and epitaxially buried DFB grating lasers emitting at 15xx nm using designs with varying grating order and fill factor, are fabricated at the Holonyak Micro and Nanotechnology Laboratory cleanroom using standard i-line optical lithography. Alternative lithography techniques are proposed without reliance on small feature definitions by electron-beam lithography. The buried grating lasers are characterized in terms of threshold current, emission wavelength, and spectral linewidth. Under pulsed operation, the threshold currents of lasers diodes 30 μm wide and 2 mm cavity length are found to moderately increase using the DFB gratings. The spectral linewidths measured for buried grating lasers are less than control lasers (lacking gratings), demonstrating a reduction of longitudinal modes with high-order gratings, compatible with optical lithography. The most successful grating designs have 50% fill factor and the measured emission linewidths are consistent with theoretical estimates. This work has demonstrated 1.5 µm laser diodes with spectral narrowing arising from longitudinal mode reduction via DFB gratings, fabricated using designs and techniques amenable with high volume production. While the grating designs demonstrated in this work have not been optimized with respect to optical loss, high-order gratings appear promising for future high-power laser applications.","abstract_html":"This thesis presents the theoretical and experimental examination of broad-area, high-order, distributed feedback (DFB) grating, semiconductor laser diodes for the goal of manufacturably attaining longitudinal mode reduction. Through coupled-mode theory, the coupling coefficient, the reflectivity, and the laser emission linewidth resulting from a refractive index grating are predicted. A comparison is made between lasers with coated and uncoated facets, demonstrating that the impact of DFB gratings is enhanced by facet coating. Both surface-etched and epitaxially buried DFB grating lasers emitting at 15xx nm using designs with varying grating order and fill factor, are fabricated at the Holonyak Micro and Nanotechnology Laboratory cleanroom using standard i-line optical lithography. Alternative lithography techniques are proposed without reliance on small feature definitions by electron-beam lithography. The buried grating lasers are characterized in terms of threshold current, emission wavelength, and spectral linewidth. Under pulsed operation, the threshold currents of lasers diodes 30 μm wide and 2 mm cavity length are found to moderately increase using the DFB gratings. The spectral linewidths measured for buried grating lasers are less than control lasers (lacking gratings), demonstrating a reduction of longitudinal modes with high-order gratings, compatible with optical lithography. The most successful grating designs have 50% fill factor and the measured emission linewidths are consistent with theoretical estimates. This work has demonstrated 1.5 µm laser diodes with spectral narrowing arising from longitudinal mode reduction via DFB gratings, fabricated using designs and techniques amenable with high volume production. While the grating designs demonstrated in this work have not been optimized with respect to optical loss, high-order gratings appear promising for future high-power laser applications.","abstract_has_math":false,"creators":["Lakomy, Katherine Anne"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Choquette, Kent D","Eden, J. Gary","Dallesasse, John","Lee, Minjoo Lawrence"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2021,"date_issued":"2021-09-17T01:10:34Z","date_published":"2021-09-17T01:10:34Z","updated_at":"2026-07-22T22:24:50Z","subjects":["semiconductor lasers","linewidth","high power","InP"],"languages":["en"],"rights":["Copyright 2021 Katherine Anne Lakomy"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/110415","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Choquette, Kent D","Eden, J. Gary","Dallesasse, John","Lee, Minjoo Lawrence"]},{"key":"dc:creator","label":"Author","values":["Lakomy, Katherine Anne"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2021-09-17T01:10:34Z","2021-02-19","2021-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["semiconductor lasers","linewidth","high power","InP"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2021 Katherine Anne Lakomy"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/110415"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis presents the theoretical and experimental examination of broad-area, high-order, distributed feedback (DFB) grating, semiconductor laser diodes for the goal of manufacturably attaining longitudinal mode reduction. Through coupled-mode theory, the coupling coefficient, the reflectivity, and the laser emission linewidth resulting from a refractive index grating are predicted. A comparison is made between lasers with coated and uncoated facets, demonstrating that the impact of DFB gratings is enhanced by facet coating. Both surface-etched and epitaxially buried DFB grating lasers emitting at 15xx nm using designs with varying grating order and fill factor, are fabricated at the Holonyak Micro and Nanotechnology Laboratory cleanroom using standard i-line optical lithography. Alternative lithography techniques are proposed without reliance on small feature definitions by electron-beam lithography. The buried grating lasers are characterized in terms of threshold current, emission wavelength, and spectral linewidth. Under pulsed operation, the threshold currents of lasers diodes 30 μm wide and 2 mm cavity length are found to moderately increase using the DFB gratings. The spectral linewidths measured for buried grating lasers are less than control lasers (lacking gratings), demonstrating a reduction of longitudinal modes with high-order gratings, compatible with optical lithography. The most successful grating designs have 50% fill factor and the measured emission linewidths are consistent with theoretical estimates. This work has demonstrated 1.5 µm laser diodes with spectral narrowing arising from longitudinal mode reduction via DFB gratings, fabricated using designs and techniques amenable with high volume production. While the grating designs demonstrated in this work have not been optimized with respect to optical loss, high-order gratings appear promising for future high-power laser applications.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2021-09-16 without embargo terms","The student, Katherine Lakomy, accepted the attached license on 2021-02-18 at 18:03.","The student, Katherine Lakomy, submitted this Dissertation for approval on 2021-02-18 at 18:16.","This Dissertation was approved for publication on 2021-02-19 at 13:31.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16167 on 2021-09-16 at 16:40:01","Made available in DSpace on 2021-09-17T01:10:34Z (GMT). No. of bitstreams: 3 LAKOMY-DISSERTATION-2021.pdf: 2567117 bytes, checksum: 0a2e6b1562d39ee54d4a33ddc7b339ce (MD5) LICENSE.txt: 4213 bytes, checksum: 865fccc633d36b5c6ced6255080a0d8f (MD5) PROQUEST_LICENSE.txt: 4559 bytes, checksum: a9daa1e32a0dff0b3cc2ff7d80eb0583 (MD5) Previous issue date: 2021-02-19"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Fabrication and performance of broad-area high power narrow linewidth semiconductor laser diodes"]}]}],"canonical_facts":{"dc:contributor":["Choquette, Kent D","Eden, J. Gary","Dallesasse, John","Lee, Minjoo Lawrence"],"dc:creator":["Lakomy, Katherine Anne"],"dc:date":["2021-09-17T01:10:34Z","2021-02-19","2021-05"],"dc:description":["This thesis presents the theoretical and experimental examination of broad-area, high-order, distributed feedback (DFB) grating, semiconductor laser diodes for the goal of manufacturably attaining longitudinal mode reduction. Through coupled-mode theory, the coupling coefficient, the reflectivity, and the laser emission linewidth resulting from a refractive index grating are predicted. A comparison is made between lasers with coated and uncoated facets, demonstrating that the impact of DFB gratings is enhanced by facet coating. Both surface-etched and epitaxially buried DFB grating lasers emitting at 15xx nm using designs with varying grating order and fill factor, are fabricated at the Holonyak Micro and Nanotechnology Laboratory cleanroom using standard i-line optical lithography. Alternative lithography techniques are proposed without reliance on small feature definitions by electron-beam lithography. The buried grating lasers are characterized in terms of threshold current, emission wavelength, and spectral linewidth. Under pulsed operation, the threshold currents of lasers diodes 30 μm wide and 2 mm cavity length are found to moderately increase using the DFB gratings. The spectral linewidths measured for buried grating lasers are less than control lasers (lacking gratings), demonstrating a reduction of longitudinal modes with high-order gratings, compatible with optical lithography. The most successful grating designs have 50% fill factor and the measured emission linewidths are consistent with theoretical estimates. This work has demonstrated 1.5 µm laser diodes with spectral narrowing arising from longitudinal mode reduction via DFB gratings, fabricated using designs and techniques amenable with high volume production. While the grating designs demonstrated in this work have not been optimized with respect to optical loss, high-order gratings appear promising for future high-power laser applications.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2021-09-16 without embargo terms","The student, Katherine Lakomy, accepted the attached license on 2021-02-18 at 18:03.","The student, Katherine Lakomy, submitted this Dissertation for approval on 2021-02-18 at 18:16.","This Dissertation was approved for publication on 2021-02-19 at 13:31.","DSpace SAF Submission Ingestion Package generated from Vireo submission #16167 on 2021-09-16 at 16:40:01","Made available in DSpace on 2021-09-17T01:10:34Z (GMT). No. of bitstreams: 3 LAKOMY-DISSERTATION-2021.pdf: 2567117 bytes, checksum: 0a2e6b1562d39ee54d4a33ddc7b339ce (MD5) LICENSE.txt: 4213 bytes, checksum: 865fccc633d36b5c6ced6255080a0d8f (MD5) PROQUEST_LICENSE.txt: 4559 bytes, checksum: a9daa1e32a0dff0b3cc2ff7d80eb0583 (MD5) Previous issue date: 2021-02-19"],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/110415"],"dc:language":["en"],"dc:rights":["Copyright 2021 Katherine Anne Lakomy"],"dc:subject":["semiconductor lasers","linewidth","high power","InP"],"dc:title":["Fabrication and performance of broad-area high power narrow linewidth semiconductor laser diodes"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:50Z"}