{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/108450"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/108450","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Cubic phase gallium nitride photonics integrated on silicon(100) for next-generation solid state lighting","abstract":"Semiconductors made of gallium nitride (GaN) and its compounds (AlInGaN) have transformed the visible light emitting diode (LED) industry thanks to their direct bandgap across the entire visible and ultraviolet spectra. Despite its success, the conventional hexagonal-phase GaN has fundamental disadvantages in performance and cost that hinder market adoption. These include: internal polarization field ( MV/cm2), high acceptor activation energy (260 meV), low hole mobility (20 cm2/V), and expensive substrates (Al2O3, SiC). Gallium nitride also crystallizes in the cubic crystal that has a higher degree of symmetry. This leads to some advantageous properties for light emitting applications: polarization-free, lower acceptor energy (200 meV), and higher hole mobility (150 cm2/V). These advantages are critical for the development of the next-generation solid state lighting. Difficulty in its synthesis stemming from the large crystal lattice mismatch, chemical incompatibility, and phase metastability has prohibited the growth of high quality semiconductor crystals that are device-worthy. This thesis explores a method of synthesizing phase-pure, high-quality cubic GaN crystals on nanopatterned Si(100) substrates via hexagonal-to-cubic phase transition, and the thesis presents a comprehensive material characterization of the crystals. Crystal growth geometry modeling of GaN on nanopatterned Si(100) substrates is used to estimate the necessary patterning parameters to facilitate complete phase transition. The cubic GaN material is then studied using structural characterization techniques including scanning electron microscopy, electron backscatter diffraction, and transmission electron microscopy. The carrier recombination properties are studied using photoluminescence, Raman spectroscopy, and cathodoluminescence. The cubic GaN synthesized using the phase transition method on carefully patterned Si(100) substrates is shown to be phase-pure, defect-free, and optically superior. Material properties such as internal quantum efficiency, Varshni coefficients, and defect levels are extracted from the experiments. Other work on hexagonal GaN light emitters on silicon substrates, chamber conditioning for metalorganic chemical vapor deposition of III-nitrides, and space-based laser instruments for NASA missions is also discussed. Class lab module development and outreach activities are included.","abstract_html":"Semiconductors made of gallium nitride (GaN) and its compounds (AlInGaN) have transformed the visible light emitting diode (LED) industry thanks to their direct bandgap across the entire visible and ultraviolet spectra. Despite its success, the conventional hexagonal-phase GaN has fundamental disadvantages in performance and cost that hinder market adoption. These include: internal polarization field ( MV/cm2), high acceptor activation energy (260 meV), low hole mobility (20 cm2/V), and expensive substrates (Al2O3, SiC). Gallium nitride also crystallizes in the cubic crystal that has a higher degree of symmetry. This leads to some advantageous properties for light emitting applications: polarization-free, lower acceptor energy (200 meV), and higher hole mobility (150 cm2/V). These advantages are critical for the development of the next-generation solid state lighting. Difficulty in its synthesis stemming from the large crystal lattice mismatch, chemical incompatibility, and phase metastability has prohibited the growth of high quality semiconductor crystals that are device-worthy. This thesis explores a method of synthesizing phase-pure, high-quality cubic GaN crystals on nanopatterned Si(100) substrates via hexagonal-to-cubic phase transition, and the thesis presents a comprehensive material characterization of the crystals. Crystal growth geometry modeling of GaN on nanopatterned Si(100) substrates is used to estimate the necessary patterning parameters to facilitate complete phase transition. The cubic GaN material is then studied using structural characterization techniques including scanning electron microscopy, electron backscatter diffraction, and transmission electron microscopy. The carrier recombination properties are studied using photoluminescence, Raman spectroscopy, and cathodoluminescence. The cubic GaN synthesized using the phase transition method on carefully patterned Si(100) substrates is shown to be phase-pure, defect-free, and optically superior. Material properties such as internal quantum efficiency, Varshni coefficients, and defect levels are extracted from the experiments. Other work on hexagonal GaN light emitters on silicon substrates, chamber conditioning for metalorganic chemical vapor deposition of III-nitrides, and space-based laser instruments for NASA missions is also discussed. Class lab module development and outreach activities are included.","abstract_has_math":false,"creators":["Liu, Richard Dicky"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Bayram, Can","Goddard, Lynford","Dallesasse, John","Lee, Minjoo L","Yu, Anthony W"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020-10-07T20:59:37Z","date_published":"2020-10-07T20:59:37Z","updated_at":"2026-07-22T22:24:48Z","subjects":["cubic gallium nitride, photonics, polarization-free, LED, silicon"],"languages":["en"],"rights":["Copyright 2020 Richard Dicky Liu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/108450","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Bayram, Can","Goddard, Lynford","Dallesasse, John","Lee, Minjoo L","Yu, Anthony W"]},{"key":"dc:creator","label":"Author","values":["Liu, Richard Dicky"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2020-10-07T20:59:37Z","2020-07-09","2020-08"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["cubic gallium nitride, photonics, polarization-free, LED, silicon"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2020 Richard Dicky Liu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/108450"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Semiconductors made of gallium nitride (GaN) and its compounds (AlInGaN) have transformed the visible light emitting diode (LED) industry thanks to their direct bandgap across the entire visible and ultraviolet spectra. Despite its success, the conventional hexagonal-phase GaN has fundamental disadvantages in performance and cost that hinder market adoption. These include: internal polarization field ( MV/cm2), high acceptor activation energy (260 meV), low hole mobility (20 cm2/V), and expensive substrates (Al2O3, SiC). Gallium nitride also crystallizes in the cubic crystal that has a higher degree of symmetry. This leads to some advantageous properties for light emitting applications: polarization-free, lower acceptor energy (200 meV), and higher hole mobility (150 cm2/V). These advantages are critical for the development of the next-generation solid state lighting. Difficulty in its synthesis stemming from the large crystal lattice mismatch, chemical incompatibility, and phase metastability has prohibited the growth of high quality semiconductor crystals that are device-worthy. This thesis explores a method of synthesizing phase-pure, high-quality cubic GaN crystals on nanopatterned Si(100) substrates via hexagonal-to-cubic phase transition, and the thesis presents a comprehensive material characterization of the crystals. Crystal growth geometry modeling of GaN on nanopatterned Si(100) substrates is used to estimate the necessary patterning parameters to facilitate complete phase transition. The cubic GaN material is then studied using structural characterization techniques including scanning electron microscopy, electron backscatter diffraction, and transmission electron microscopy. The carrier recombination properties are studied using photoluminescence, Raman spectroscopy, and cathodoluminescence. The cubic GaN synthesized using the phase transition method on carefully patterned Si(100) substrates is shown to be phase-pure, defect-free, and optically superior. Material properties such as internal quantum efficiency, Varshni coefficients, and defect levels are extracted from the experiments. Other work on hexagonal GaN light emitters on silicon substrates, chamber conditioning for metalorganic chemical vapor deposition of III-nitrides, and space-based laser instruments for NASA missions is also discussed. Class lab module development and outreach activities are included.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2020-10-02 without embargo terms","The student, Richard Dicky Liu, accepted the attached license on 2020-07-06 at 14:01.","The student, Richard Dicky Liu, submitted this Dissertation for approval on 2020-07-06 at 14:17.","This Dissertation was approved for publication on 2020-07-09 at 14:19.","DSpace SAF Submission Ingestion Package generated from Vireo submission #15503 on 2020-10-02 at 15:11:54","Made available in DSpace on 2020-10-07T20:59:37Z (GMT). No. of bitstreams: 3 LIU-DISSERTATION-2020.pdf: 33552862 bytes, checksum: 149b3a1a4e2044960786b0f7552a3ac7 (MD5) LICENSE.txt: 4206 bytes, checksum: af72643d07c51d58112bf264a975c970 (MD5) PROQUEST_LICENSE.txt: 4552 bytes, checksum: 67d1ea56bad1e981587741d911533a1d (MD5) Previous issue date: 2020-07-09"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Cubic phase gallium nitride photonics integrated on silicon(100) for next-generation solid state lighting"]}]}],"canonical_facts":{"dc:contributor":["Bayram, Can","Goddard, Lynford","Dallesasse, John","Lee, Minjoo L","Yu, Anthony W"],"dc:creator":["Liu, Richard Dicky"],"dc:date":["2020-10-07T20:59:37Z","2020-07-09","2020-08"],"dc:description":["Semiconductors made of gallium nitride (GaN) and its compounds (AlInGaN) have transformed the visible light emitting diode (LED) industry thanks to their direct bandgap across the entire visible and ultraviolet spectra. Despite its success, the conventional hexagonal-phase GaN has fundamental disadvantages in performance and cost that hinder market adoption. These include: internal polarization field ( MV/cm2), high acceptor activation energy (260 meV), low hole mobility (20 cm2/V), and expensive substrates (Al2O3, SiC). Gallium nitride also crystallizes in the cubic crystal that has a higher degree of symmetry. This leads to some advantageous properties for light emitting applications: polarization-free, lower acceptor energy (200 meV), and higher hole mobility (150 cm2/V). These advantages are critical for the development of the next-generation solid state lighting. Difficulty in its synthesis stemming from the large crystal lattice mismatch, chemical incompatibility, and phase metastability has prohibited the growth of high quality semiconductor crystals that are device-worthy. This thesis explores a method of synthesizing phase-pure, high-quality cubic GaN crystals on nanopatterned Si(100) substrates via hexagonal-to-cubic phase transition, and the thesis presents a comprehensive material characterization of the crystals. Crystal growth geometry modeling of GaN on nanopatterned Si(100) substrates is used to estimate the necessary patterning parameters to facilitate complete phase transition. The cubic GaN material is then studied using structural characterization techniques including scanning electron microscopy, electron backscatter diffraction, and transmission electron microscopy. The carrier recombination properties are studied using photoluminescence, Raman spectroscopy, and cathodoluminescence. The cubic GaN synthesized using the phase transition method on carefully patterned Si(100) substrates is shown to be phase-pure, defect-free, and optically superior. Material properties such as internal quantum efficiency, Varshni coefficients, and defect levels are extracted from the experiments. Other work on hexagonal GaN light emitters on silicon substrates, chamber conditioning for metalorganic chemical vapor deposition of III-nitrides, and space-based laser instruments for NASA missions is also discussed. Class lab module development and outreach activities are included.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2020-10-02 without embargo terms","The student, Richard Dicky Liu, accepted the attached license on 2020-07-06 at 14:01.","The student, Richard Dicky Liu, submitted this Dissertation for approval on 2020-07-06 at 14:17.","This Dissertation was approved for publication on 2020-07-09 at 14:19.","DSpace SAF Submission Ingestion Package generated from Vireo submission #15503 on 2020-10-02 at 15:11:54","Made available in DSpace on 2020-10-07T20:59:37Z (GMT). No. of bitstreams: 3 LIU-DISSERTATION-2020.pdf: 33552862 bytes, checksum: 149b3a1a4e2044960786b0f7552a3ac7 (MD5) LICENSE.txt: 4206 bytes, checksum: af72643d07c51d58112bf264a975c970 (MD5) PROQUEST_LICENSE.txt: 4552 bytes, checksum: 67d1ea56bad1e981587741d911533a1d (MD5) Previous issue date: 2020-07-09"],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/108450"],"dc:language":["en"],"dc:rights":["Copyright 2020 Richard Dicky Liu"],"dc:subject":["cubic gallium nitride, photonics, polarization-free, LED, silicon"],"dc:title":["Cubic phase gallium nitride photonics integrated on silicon(100) for next-generation solid state lighting"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:48Z"}