{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/108347"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/108347","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Metal-assisted chemical etching of 4H silicon carbide","abstract":"Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature.","abstract_html":"Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature.","abstract_has_math":false,"creators":["Michaels, Julian Arthur"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Li, Xiuling"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020-08-27T00:51:32Z","date_published":"2020-08-27T00:51:32Z","updated_at":"2026-07-22T22:24:48Z","subjects":["SiC","Metal-assisted Chemical Etch, porous silicon carbide, photochemical, Etching, nanotechnology, nanosphere lithography"],"languages":["en"],"rights":["Copyright 2020 Julian Michaels"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/108347","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling"]},{"key":"dc:creator","label":"Author","values":["Michaels, Julian Arthur"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2020-08-27T00:51:32Z","2022-08-27T00:51:40Z","2020-05-12","2020-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["SiC","Metal-assisted Chemical Etch, porous silicon carbide, photochemical, Etching, nanotechnology, nanosphere lithography"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2020 Julian Michaels"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/108347"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-05-01","The student, Julian Michaels, accepted the attached license on 2020-05-12 at 13:11.","The student, Julian Michaels, submitted this Thesis for approval on 2020-05-12 at 13:24.","This Thesis was approved for publication on 2020-05-12 at 16:36.","DSpace SAF Submission Ingestion Package generated from Vireo submission #15354 on 2020-08-25 at 17:44:23","Made available in DSpace on 2020-08-27T00:51:32Z (GMT). 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The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-05-01","The student, Julian Michaels, accepted the attached license on 2020-05-12 at 13:11.","The student, Julian Michaels, submitted this Thesis for approval on 2020-05-12 at 13:24.","This Thesis was approved for publication on 2020-05-12 at 16:36.","DSpace SAF Submission Ingestion Package generated from Vireo submission #15354 on 2020-08-25 at 17:44:23","Made available in DSpace on 2020-08-27T00:51:32Z (GMT). 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