{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/108241"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/108241","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Scanning tunneling microscopy and spectroscopy of topological materials and heterostructures in thin films and devices","abstract":"This dissertation reports the results of scanning tunneling microscopy experiments probing the physics of thin films of topological materials. A 3D topological insulator Bi2Te3 and a 2D topological insulator WTe2, grown epitaxially, are studied with atomic resolution, and their physics is probed using in-situ back gating. The development of the back-gating process in a scanning tunneling microscope is one of the main results of this work and is reported in detail. The band structure of the monolayer WTe2 is observed to be drastically changing upon the application of electric field through the back gate. The complex effect of the gate-induced electric field on monolayer WTe2 is explored and discussed. A study of the spatial extent of 1D edge states of WTe2 is presented. A new process combining nanopatterned superconductors and topological materials is proposed and implemented. The proposed geometry in devices suitable for scanning tunneling microscopy studies opens up many new possibilities to explore the proximity effect in topological materials for future Majorana platform realization.","abstract_html":"This dissertation reports the results of scanning tunneling microscopy experiments probing the physics of thin films of topological materials. A 3D topological insulator Bi2Te3 and a 2D topological insulator WTe2, grown epitaxially, are studied with atomic resolution, and their physics is probed using in-situ back gating. The development of the back-gating process in a scanning tunneling microscope is one of the main results of this work and is reported in detail. The band structure of the monolayer WTe2 is observed to be drastically changing upon the application of electric field through the back gate. The complex effect of the gate-induced electric field on monolayer WTe2 is explored and discussed. A study of the spatial extent of 1D edge states of WTe2 is presented. A new process combining nanopatterned superconductors and topological materials is proposed and implemented. The proposed geometry in devices suitable for scanning tunneling microscopy studies opens up many new possibilities to explore the proximity effect in topological materials for future Majorana platform realization.","abstract_has_math":false,"creators":["Maximenko, Yulia"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Madhavan, Vidya","Eckstein, James","Hughes, Taylor","Kwiat, Paul","Stack, John"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020-08-27T00:49:52Z","date_published":"2020-08-27T00:49:52Z","updated_at":"2026-07-22T22:24:48Z","subjects":["scanning tunneling microscopy, topological insulators, back gating, monolayer, molecular beam epitaxy"],"languages":["en"],"rights":["Copyright 2020 Yulia Maximenko"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/108241","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Madhavan, Vidya","Eckstein, James","Hughes, Taylor","Kwiat, Paul","Stack, John"]},{"key":"dc:creator","label":"Author","values":["Maximenko, Yulia"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2020-08-27T00:49:52Z","2022-08-27T00:51:40Z","2020-04-06","2020-05"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["scanning tunneling microscopy, topological insulators, back gating, monolayer, molecular beam epitaxy"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2020 Yulia Maximenko"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/108241"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This dissertation reports the results of scanning tunneling microscopy experiments probing the physics of thin films of topological materials. A 3D topological insulator Bi2Te3 and a 2D topological insulator WTe2, grown epitaxially, are studied with atomic resolution, and their physics is probed using in-situ back gating. The development of the back-gating process in a scanning tunneling microscope is one of the main results of this work and is reported in detail. The band structure of the monolayer WTe2 is observed to be drastically changing upon the application of electric field through the back gate. The complex effect of the gate-induced electric field on monolayer WTe2 is explored and discussed. A study of the spatial extent of 1D edge states of WTe2 is presented. A new process combining nanopatterned superconductors and topological materials is proposed and implemented. The proposed geometry in devices suitable for scanning tunneling microscopy studies opens up many new possibilities to explore the proximity effect in topological materials for future Majorana platform realization.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-05-01","The student, Yulia Maximenko, accepted the attached license on 2020-04-02 at 03:39.","The student, Yulia Maximenko, submitted this Dissertation for approval on 2020-04-02 at 03:46.","This Dissertation was approved for publication on 2020-04-06 at 14:22.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14932 on 2020-08-25 at 17:39:50","Made available in DSpace on 2020-08-27T00:49:52Z (GMT). No. of bitstreams: 2 MAXIMENKO-DISSERTATION-2020.pdf: 21100430 bytes, checksum: 60c71fa0134ef0ad1f200befa3b5c960 (MD5) LICENSE.txt: 4212 bytes, checksum: 062c18cbaa69f350904e432c0d667dbc (MD5) Previous issue date: 2020-04-06","Embargo set by: Seth Robbins for item 115855 Lift date: 2022-08-27T00:50:22Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 115855 Lift date: 2022-08-27T00:51:40Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Author requested closed access (OA after 2yrs) in Vireo ETD system","Limited"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Scanning tunneling microscopy and spectroscopy of topological materials and heterostructures in thin films and devices"]}]}],"canonical_facts":{"dc:contributor":["Madhavan, Vidya","Eckstein, James","Hughes, Taylor","Kwiat, Paul","Stack, John"],"dc:creator":["Maximenko, Yulia"],"dc:date":["2020-08-27T00:49:52Z","2022-08-27T00:51:40Z","2020-04-06","2020-05"],"dc:description":["This dissertation reports the results of scanning tunneling microscopy experiments probing the physics of thin films of topological materials. A 3D topological insulator Bi2Te3 and a 2D topological insulator WTe2, grown epitaxially, are studied with atomic resolution, and their physics is probed using in-situ back gating. The development of the back-gating process in a scanning tunneling microscope is one of the main results of this work and is reported in detail. The band structure of the monolayer WTe2 is observed to be drastically changing upon the application of electric field through the back gate. The complex effect of the gate-induced electric field on monolayer WTe2 is explored and discussed. A study of the spatial extent of 1D edge states of WTe2 is presented. A new process combining nanopatterned superconductors and topological materials is proposed and implemented. The proposed geometry in devices suitable for scanning tunneling microscopy studies opens up many new possibilities to explore the proximity effect in topological materials for future Majorana platform realization.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-05-01","The student, Yulia Maximenko, accepted the attached license on 2020-04-02 at 03:39.","The student, Yulia Maximenko, submitted this Dissertation for approval on 2020-04-02 at 03:46.","This Dissertation was approved for publication on 2020-04-06 at 14:22.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14932 on 2020-08-25 at 17:39:50","Made available in DSpace on 2020-08-27T00:49:52Z (GMT). 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