{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/106366"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/106366","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Direct tunneling modulation and signal mixing of semiconductor lasers","abstract":"The transistor laser invented by Feng and Holonyak is a unique device that bridges the gap between high-speed III-V compound semiconductor transistors and high-speed semiconductor lasers. In a highly integrated fashion, the transistor laser is capable of simultaneous transistor electrical operation and electron-to-photon conversion. The three-terminal transistor structure has the potential to overcome the diode laser’s modulation speed limit by further reducing the carrier recombination lifetime. In addition, a recently discovered tunneling mechanism inside the transistor laser device structure paves the way for ultrahigh-speed direct modulation of laser optical output. In this work, the operation of the transistor laser is reviewed and compared against the conventional diode laser; both current modulation and tunneling modulation of the transistor laser are formulated and analyzed, which leads to the demonstration of direct photonic signal mixing. This work establishes the fundamentals of the transistor laser device operation and presents the transistor laser as an integrated, multi-functional optoelectronic device.","abstract_html":"The transistor laser invented by Feng and Holonyak is a unique device that bridges the gap between high-speed III-V compound semiconductor transistors and high-speed semiconductor lasers. In a highly integrated fashion, the transistor laser is capable of simultaneous transistor electrical operation and electron-to-photon conversion. The three-terminal transistor structure has the potential to overcome the diode laser’s modulation speed limit by further reducing the carrier recombination lifetime. In addition, a recently discovered tunneling mechanism inside the transistor laser device structure paves the way for ultrahigh-speed direct modulation of laser optical output. In this work, the operation of the transistor laser is reviewed and compared against the conventional diode laser; both current modulation and tunneling modulation of the transistor laser are formulated and analyzed, which leads to the demonstration of direct photonic signal mixing. This work establishes the fundamentals of the transistor laser device operation and presents the transistor laser as an integrated, multi-functional optoelectronic device.","abstract_has_math":false,"creators":["Qiu, Junyi"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Dallesasse, John","Dragic, Peter","Jin, Jianming"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020-03-02T22:15:05Z","date_published":"2020-03-02T22:15:05Z","updated_at":"2026-07-22T22:24:45Z","subjects":["Compound semiconductor","transistor","laser","transistor laser","tunneling"],"languages":["en"],"rights":["Copyright 2019 Junyi Qiu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/106366","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Dallesasse, John","Dragic, Peter","Jin, Jianming"]},{"key":"dc:creator","label":"Author","values":["Qiu, Junyi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2020-03-02T22:15:05Z","2022-03-03T10:15:30Z","2019-12-04","2019-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Compound semiconductor","transistor","laser","transistor laser","tunneling"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2019 Junyi Qiu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/106366"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The transistor laser invented by Feng and Holonyak is a unique device that bridges the gap between high-speed III-V compound semiconductor transistors and high-speed semiconductor lasers. In a highly integrated fashion, the transistor laser is capable of simultaneous transistor electrical operation and electron-to-photon conversion. The three-terminal transistor structure has the potential to overcome the diode laser’s modulation speed limit by further reducing the carrier recombination lifetime. In addition, a recently discovered tunneling mechanism inside the transistor laser device structure paves the way for ultrahigh-speed direct modulation of laser optical output. In this work, the operation of the transistor laser is reviewed and compared against the conventional diode laser; both current modulation and tunneling modulation of the transistor laser are formulated and analyzed, which leads to the demonstration of direct photonic signal mixing. This work establishes the fundamentals of the transistor laser device operation and presents the transistor laser as an integrated, multi-functional optoelectronic device.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2021-12-01","The student, Junyi Qiu, accepted the attached license on 2019-12-03 at 15:30.","The student, Junyi Qiu, submitted this Dissertation for approval on 2019-12-03 at 15:34.","This Dissertation was approved for publication on 2019-12-04 at 10:09.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14674 on 2020-02-28 at 17:23:08","Made available in DSpace on 2020-03-02T22:15:05Z (GMT). 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In a highly integrated fashion, the transistor laser is capable of simultaneous transistor electrical operation and electron-to-photon conversion. The three-terminal transistor structure has the potential to overcome the diode laser’s modulation speed limit by further reducing the carrier recombination lifetime. In addition, a recently discovered tunneling mechanism inside the transistor laser device structure paves the way for ultrahigh-speed direct modulation of laser optical output. In this work, the operation of the transistor laser is reviewed and compared against the conventional diode laser; both current modulation and tunneling modulation of the transistor laser are formulated and analyzed, which leads to the demonstration of direct photonic signal mixing. This work establishes the fundamentals of the transistor laser device operation and presents the transistor laser as an integrated, multi-functional optoelectronic device.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2021-12-01","The student, Junyi Qiu, accepted the attached license on 2019-12-03 at 15:30.","The student, Junyi Qiu, submitted this Dissertation for approval on 2019-12-03 at 15:34.","This Dissertation was approved for publication on 2019-12-04 at 10:09.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14674 on 2020-02-28 at 17:23:08","Made available in DSpace on 2020-03-02T22:15:05Z (GMT). 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