{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/106209"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/106209","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor","abstract":"Based on the observation of the degradation of the base transfer factor caused by the insertion of the quantum well (QW) together with the heavy base doping, this work demonstrates the physical modeling of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base transport factor close to unity in conventional bipolar junction transistor operation, and its variation with the base current. The approach of this work is to assess the concentration of base minority carrier captured in the QW and give an analytical expression for the carrier lifetime in the base, which is a key factor for device frequency performance. Expressions for the physical parameters such as capture time, base recombination lifetime and base transit time are obtained in terms of experimental values such as base current, and device design parameters such as base width, QW width and QW location. While the calculated base recombination lifetime can be of the order of a fraction of a nanosecond, the QW capture time is found to be of the order of a picosecond. These parameters retrieved from the calculation are then used to successfully reproduce the optical frequency response diagrams of the light-emitting transistor and transistor laser obtained from experiments.","abstract_html":"Based on the observation of the degradation of the base transfer factor caused by the insertion of the quantum well (QW) together with the heavy base doping, this work demonstrates the physical modeling of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base transport factor close to unity in conventional bipolar junction transistor operation, and its variation with the base current. The approach of this work is to assess the concentration of base minority carrier captured in the QW and give an analytical expression for the carrier lifetime in the base, which is a key factor for device frequency performance. Expressions for the physical parameters such as capture time, base recombination lifetime and base transit time are obtained in terms of experimental values such as base current, and device design parameters such as base width, QW width and QW location. While the calculated base recombination lifetime can be of the order of a fraction of a nanosecond, the QW capture time is found to be of the order of a picosecond. These parameters retrieved from the calculation are then used to successfully reproduce the optical frequency response diagrams of the light-emitting transistor and transistor laser obtained from experiments.","abstract_has_math":false,"creators":["Li, Yue"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Leburton, Jean-Pierre"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020-03-02T21:58:15Z","date_published":"2020-03-02T21:58:15Z","updated_at":"2026-07-22T22:24:45Z","subjects":["Light Emitting Transistor","Bipolar Transistor","Transistor Laser","Quantum Well","Frequency Response","Modeling"],"languages":["en"],"rights":["Copyright 2019 Yue Li"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/106209","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Leburton, Jean-Pierre"]},{"key":"dc:creator","label":"Author","values":["Li, Yue"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2020-03-02T21:58:15Z","2019-11-25","2019-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Light Emitting Transistor","Bipolar Transistor","Transistor Laser","Quantum Well","Frequency Response","Modeling"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2019 Yue Li"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/106209"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Based on the observation of the degradation of the base transfer factor caused by the insertion of the quantum well (QW) together with the heavy base doping, this work demonstrates the physical modeling of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base transport factor close to unity in conventional bipolar junction transistor operation, and its variation with the base current. The approach of this work is to assess the concentration of base minority carrier captured in the QW and give an analytical expression for the carrier lifetime in the base, which is a key factor for device frequency performance. Expressions for the physical parameters such as capture time, base recombination lifetime and base transit time are obtained in terms of experimental values such as base current, and device design parameters such as base width, QW width and QW location. While the calculated base recombination lifetime can be of the order of a fraction of a nanosecond, the QW capture time is found to be of the order of a picosecond. These parameters retrieved from the calculation are then used to successfully reproduce the optical frequency response diagrams of the light-emitting transistor and transistor laser obtained from experiments.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2020-02-28 without embargo terms","The student, Yue Li, accepted the attached license on 2019-11-22 at 22:29.","The student, Yue Li, submitted this Thesis for approval on 2019-11-22 at 22:36.","This Thesis was approved for publication on 2019-11-25 at 11:44.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14600 on 2020-02-28 at 17:14:10","Made available in DSpace on 2020-03-02T21:58:15Z (GMT). No. of bitstreams: 2 LI-THESIS-2019.pdf: 623769 bytes, checksum: beafe34c8c7abe5a85f184297ca86ecd (MD5) LICENSE.txt: 4203 bytes, checksum: 33a7c9cd131afd20889f7ba58ef1b180 (MD5) Previous issue date: 2019-11-25"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor"]}]}],"canonical_facts":{"dc:contributor":["Leburton, Jean-Pierre"],"dc:creator":["Li, Yue"],"dc:date":["2020-03-02T21:58:15Z","2019-11-25","2019-12"],"dc:description":["Based on the observation of the degradation of the base transfer factor caused by the insertion of the quantum well (QW) together with the heavy base doping, this work demonstrates the physical modeling of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base transport factor close to unity in conventional bipolar junction transistor operation, and its variation with the base current. The approach of this work is to assess the concentration of base minority carrier captured in the QW and give an analytical expression for the carrier lifetime in the base, which is a key factor for device frequency performance. Expressions for the physical parameters such as capture time, base recombination lifetime and base transit time are obtained in terms of experimental values such as base current, and device design parameters such as base width, QW width and QW location. While the calculated base recombination lifetime can be of the order of a fraction of a nanosecond, the QW capture time is found to be of the order of a picosecond. These parameters retrieved from the calculation are then used to successfully reproduce the optical frequency response diagrams of the light-emitting transistor and transistor laser obtained from experiments.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2020-02-28 without embargo terms","The student, Yue Li, accepted the attached license on 2019-11-22 at 22:29.","The student, Yue Li, submitted this Thesis for approval on 2019-11-22 at 22:36.","This Thesis was approved for publication on 2019-11-25 at 11:44.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14600 on 2020-02-28 at 17:14:10","Made available in DSpace on 2020-03-02T21:58:15Z (GMT). No. of bitstreams: 2 LI-THESIS-2019.pdf: 623769 bytes, checksum: beafe34c8c7abe5a85f184297ca86ecd (MD5) LICENSE.txt: 4203 bytes, checksum: 33a7c9cd131afd20889f7ba58ef1b180 (MD5) Previous issue date: 2019-11-25"],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/106209"],"dc:language":["en"],"dc:rights":["Copyright 2019 Yue Li"],"dc:subject":["Light Emitting Transistor","Bipolar Transistor","Transistor Laser","Quantum Well","Frequency Response","Modeling"],"dc:title":["Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:45Z"}