{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/105819"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/105819","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Development of high-speed P-i-N photodetector for 50Gb/s optical link in data centers","abstract":"Various emerging applications such as high-performance computing (HPC) have been pushing the speed limit of communication. The growing dependence on the optical interconnect in data centers results from its superiority over traditional electrical interconnects to transmit data at high speed over long distance. The P-i-N photodiode, having the advantage of high bandwidth and low noise level, plays a significant role in the receiver end of optical interconnects. The subject of this work is the design, fabrication, measurement and modeling of high-speed GaAs P-i-N photodiodes operating at 50Gb/s. The material structure and device scaling are determined through microwave analysis and simulation. Photodiodes of 20um aperture diameter is fabricated and subsequently characterized, showing both high bandwidth and low noise level. A small signal model is also proposed in support of the measurement results.","abstract_html":"Various emerging applications such as high-performance computing (HPC) have been pushing the speed limit of communication. The growing dependence on the optical interconnect in data centers results from its superiority over traditional electrical interconnects to transmit data at high speed over long distance. The P-i-N photodiode, having the advantage of high bandwidth and low noise level, plays a significant role in the receiver end of optical interconnects. The subject of this work is the design, fabrication, measurement and modeling of high-speed GaAs P-i-N photodiodes operating at 50Gb/s. The material structure and device scaling are determined through microwave analysis and simulation. Photodiodes of 20um aperture diameter is fabricated and subsequently characterized, showing both high bandwidth and low noise level. A small signal model is also proposed in support of the measurement results.","abstract_has_math":false,"creators":["Wu, Dufei"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2019,"date_issued":"2019-11-26T20:49:30Z","date_published":"2019-11-26T20:49:30Z","updated_at":"2026-07-22T22:24:45Z","subjects":["P-i-N Photodetector, Optical Link, Dark Current"],"languages":["en"],"rights":["Copyright 2019 Dufei Wu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/105819","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Wu, Dufei"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2019-11-26T20:49:30Z","2021-11-27T10:15:26Z","2019-07-12","2019-08"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["P-i-N Photodetector, Optical Link, Dark Current"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2019 Dufei Wu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/105819"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Various emerging applications such as high-performance computing (HPC) have been pushing the speed limit of communication. The growing dependence on the optical interconnect in data centers results from its superiority over traditional electrical interconnects to transmit data at high speed over long distance. The P-i-N photodiode, having the advantage of high bandwidth and low noise level, plays a significant role in the receiver end of optical interconnects. The subject of this work is the design, fabrication, measurement and modeling of high-speed GaAs P-i-N photodiodes operating at 50Gb/s. The material structure and device scaling are determined through microwave analysis and simulation. Photodiodes of 20um aperture diameter is fabricated and subsequently characterized, showing both high bandwidth and low noise level. A small signal model is also proposed in support of the measurement results.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2021-08-01","The student, Dufei Wu, accepted the attached license on 2019-07-12 at 13:38.","The student, Dufei Wu, submitted this Thesis for approval on 2019-07-12 at 13:53.","This Thesis was approved for publication on 2019-07-12 at 15:20.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14306 on 2019-11-26 at 13:05:53","Made available in DSpace on 2019-11-26T20:49:30Z (GMT). No. of bitstreams: 2 WU-THESIS-2019.pdf: 656531 bytes, checksum: f158229dca3d3969175a4c8fce00193e (MD5) LICENSE.txt: 4205 bytes, checksum: 588032febf320c85ee0603a87fe5cbfa (MD5) Previous issue date: 2019-07-12","Embargo set by: Seth Robbins for item 112964 Lift date: 2021-11-26T20:49:41Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 112964 on 2021-11-27T10:15:26Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Development of high-speed P-i-N photodetector for 50Gb/s optical link in data centers"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton"],"dc:creator":["Wu, Dufei"],"dc:date":["2019-11-26T20:49:30Z","2021-11-27T10:15:26Z","2019-07-12","2019-08"],"dc:description":["Various emerging applications such as high-performance computing (HPC) have been pushing the speed limit of communication. The growing dependence on the optical interconnect in data centers results from its superiority over traditional electrical interconnects to transmit data at high speed over long distance. The P-i-N photodiode, having the advantage of high bandwidth and low noise level, plays a significant role in the receiver end of optical interconnects. The subject of this work is the design, fabrication, measurement and modeling of high-speed GaAs P-i-N photodiodes operating at 50Gb/s. The material structure and device scaling are determined through microwave analysis and simulation. Photodiodes of 20um aperture diameter is fabricated and subsequently characterized, showing both high bandwidth and low noise level. A small signal model is also proposed in support of the measurement results.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2021-08-01","The student, Dufei Wu, accepted the attached license on 2019-07-12 at 13:38.","The student, Dufei Wu, submitted this Thesis for approval on 2019-07-12 at 13:53.","This Thesis was approved for publication on 2019-07-12 at 15:20.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14306 on 2019-11-26 at 13:05:53","Made available in DSpace on 2019-11-26T20:49:30Z (GMT). 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