Self-assembled strained nanostructures for light emission grown using molecular beam epitaxy
type: CreativeWork
description: III-V nanostructures are widely researched for applications in dislocation-resistant light emitters for photonic integrated circuits, quantum computing and single photon emitters. The 0D nanostructures include quantum dots (QDs), dot in a well (DWELLs), sub-monolayer QDs and droplet epitaxy QDs, while 1D elongated structures include quantum dashes and nanowires (NWs). The optical properties of nanostructures can be controlled through size, composition, strain and band-offsets during epitaxial growth and can be tailored precisely to emit light with photon energies suited to the application, spanning 0.2-2.0 eV. This thesis explores two novel QD based light emitters in the visible and near-infrared wavelength regime. In the first part of the thesis, we demonstrate the growth and characterization of tensile strained Ge QDs and Ge NWs phase segregated in the III-V matrix via Volmer-Weber growth mode emitting at 1200 nm. The second part of the thesis demonstrates the dislocation tolerance of compressively strained InP QDs grown on lattice-matched GaAs and lattice-mismatched Si substrate via Stranski-Krastanov growth mode emitting at 713 nm. The first part of the thesis explores the growth of tensile strained Ge QDs and NWs phase segregated in the III-V matrix. Epitaxial growth of phase segregated Ge nanostructures embedded within III-V compound semiconductors is a promising way to achieve a high biaxial tensile strain along with precise control of nanostructure density, size and morphology. Here we demonstrate growth of phase-segregated Ge quantum dots (QDs) and compare them to our previously reported Ge nanowires (NWs); both are strained to an In0.52Al0.48As matrix with a high biaxial tensile strain of 3.6%. Despite the similar growth conditions, there exist pronounced differences in the lateral size and planar density of Ge QDs and Ge NWs, with Ge QDs showing significantly larger size, lower density and structural anisotropy along the in-plane [1-10] direction. In addi…
abstract: III-V nanostructures are widely researched for applications in dislocation-resistant light emitters for photonic integrated circuits, quantum computing and single photon emitters. The 0D nanostructures include quantum dots (QDs), dot in a well (DWELLs), sub-monolayer QDs and droplet epitaxy QDs, while 1D elongated structures include quantum dashes and nanowires (NWs). The optical properties of nanostructures can be controlled through size, composition, strain and band-offsets during epitaxial growth and can be tailored precisely to emit light with photon energies suited to the application, spanning 0.2-2.0 eV. This thesis explores two novel QD based light emitters in the visible and near-infrared wavelength regime. In the first part of the thesis, we demonstrate the growth and characterization of tensile strained Ge QDs and Ge NWs phase segregated in the III-V matrix via Volmer-Weber growth mode emitting at 1200 nm. The second part of the thesis demonstrates the dislocation tolerance of compressively strained InP QDs grown on lattice-matched GaAs and lattice-mismatched Si substrate via Stranski-Krastanov growth mode emitting at 713 nm. The first part of the thesis explores the growth of tensile strained Ge QDs and NWs phase segregated in the III-V matrix. Epitaxial growth of phase segregated Ge nanostructures embedded within III-V compound semiconductors is a promising way to achieve a high biaxial tensile strain along with precise control of nanostructure density, size and morphology. Here we demonstrate growth of phase-segregated Ge quantum dots (QDs) and compare them to our previously reported Ge nanowires (NWs); both are strained to an In0.52Al0.48As matrix with a high biaxial tensile strain of 3.6%. Despite the similar growth conditions, there exist pronounced differences in the lateral size and planar density of Ge QDs and Ge NWs, with Ge QDs showing significantly larger size, lower density and structural anisotropy along the in-plane [1-10] direction. In addi…
author: Dhingra, Pankul
language: en
keywords: Molecular beam epitaxy, Quantum wires, Quantum dots, Heterovalent epitaxy
date published: 2019-08-23T20:48:26Z
date modified: 2026-07-22T22:24:44Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/105265