{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/102783"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/102783","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Microwave characterization of vertical cavity surface emitting diode laser and transistor laser","abstract":"Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The vertical cavity surface-emitting laser (VCSEL) is the most commercially popular choice. With high reflectivity DBR mirrors and oxide-confinement for emission mode control and leakage current reduction, VCSELs are able to achieve a low laser threshold and high modulation bandwidth. Currently in published research results, the highest data transmission rate demonstrated for an 850 nm VCSEL is 57 Gb/s error-free at 25 °C and 50 Gb/s error-free at 85 °C. Nevertheless, the bandwidth and data transmission performance of diode lasers, such as VCSELs, are fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination lifetime. Ultimately to reach low threshold and high energy per bit efficiency, the first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with partially etched mesa is developed and fabricated. The tunneling modulation aspect and possible application of the TL is also explored in this dissertation.","abstract_html":"Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (&lt; 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The vertical cavity surface-emitting laser (VCSEL) is the most commercially popular choice. With high reflectivity DBR mirrors and oxide-confinement for emission mode control and leakage current reduction, VCSELs are able to achieve a low laser threshold and high modulation bandwidth. Currently in published research results, the highest data transmission rate demonstrated for an 850 nm VCSEL is 57 Gb/s error-free at 25 °C and 50 Gb/s error-free at 85 °C. Nevertheless, the bandwidth and data transmission performance of diode lasers, such as VCSELs, are fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination lifetime. Ultimately to reach low threshold and high energy per bit efficiency, the first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with partially etched mesa is developed and fabricated. The tunneling modulation aspect and possible application of the TL is also explored in this dissertation.","abstract_has_math":false,"creators":["Wang, Curtis Yilin"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Jin, Jianming","Dallesasse, John M.","Dragic, Peter"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2019,"date_issued":"2019-02-07T20:35:53Z","date_published":"2019-02-07T20:35:53Z","updated_at":"2026-07-22T22:24:42Z","subjects":["Semiconductor Laser, Transistor Laser, optical interconnect"],"languages":["en"],"rights":["Copyright 2018 Curtis Wang"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/102783","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Jin, Jianming","Dallesasse, John M.","Dragic, Peter"]},{"key":"dc:creator","label":"Author","values":["Wang, Curtis Yilin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2019-02-07T20:35:53Z","2021-02-08T10:15:32Z","2018-10-08","2018-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Semiconductor Laser, Transistor Laser, optical interconnect"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2018 Curtis Wang"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/102783"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The vertical cavity surface-emitting laser (VCSEL) is the most commercially popular choice. With high reflectivity DBR mirrors and oxide-confinement for emission mode control and leakage current reduction, VCSELs are able to achieve a low laser threshold and high modulation bandwidth. Currently in published research results, the highest data transmission rate demonstrated for an 850 nm VCSEL is 57 Gb/s error-free at 25 °C and 50 Gb/s error-free at 85 °C. Nevertheless, the bandwidth and data transmission performance of diode lasers, such as VCSELs, are fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination lifetime. Ultimately to reach low threshold and high energy per bit efficiency, the first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with partially etched mesa is developed and fabricated. The tunneling modulation aspect and possible application of the TL is also explored in this dissertation.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2020-12-01","The student, Curtis Wang, accepted the attached license on 2018-10-04 at 00:08.","The student, Curtis Wang, submitted this Dissertation for approval on 2018-10-04 at 00:14.","This Dissertation was approved for publication on 2018-10-08 at 13:11.","DSpace SAF Submission Ingestion Package generated from Vireo submission #13027 on 2019-02-07 at 14:16:42","Made available in DSpace on 2019-02-07T20:35:53Z (GMT). No. of bitstreams: 2 WANG-DISSERTATION-2018.pdf: 5094810 bytes, checksum: b3cd3c0292c0c4da90cf7feca1115f54 (MD5) LICENSE.txt: 4208 bytes, checksum: e28a7e77a7ade8a2fd36c51579d613a6 (MD5) Previous issue date: 2018-10-08","Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:36:09Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:39:46Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:44:35Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 109807 on 2021-02-08T10:15:32Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Microwave characterization of vertical cavity surface emitting diode laser and transistor laser"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton","Jin, Jianming","Dallesasse, John M.","Dragic, Peter"],"dc:creator":["Wang, Curtis Yilin"],"dc:date":["2019-02-07T20:35:53Z","2021-02-08T10:15:32Z","2018-10-08","2018-12"],"dc:description":["Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The vertical cavity surface-emitting laser (VCSEL) is the most commercially popular choice. With high reflectivity DBR mirrors and oxide-confinement for emission mode control and leakage current reduction, VCSELs are able to achieve a low laser threshold and high modulation bandwidth. Currently in published research results, the highest data transmission rate demonstrated for an 850 nm VCSEL is 57 Gb/s error-free at 25 °C and 50 Gb/s error-free at 85 °C. Nevertheless, the bandwidth and data transmission performance of diode lasers, such as VCSELs, are fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination lifetime. Ultimately to reach low threshold and high energy per bit efficiency, the first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with partially etched mesa is developed and fabricated. The tunneling modulation aspect and possible application of the TL is also explored in this dissertation.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2020-12-01","The student, Curtis Wang, accepted the attached license on 2018-10-04 at 00:08.","The student, Curtis Wang, submitted this Dissertation for approval on 2018-10-04 at 00:14.","This Dissertation was approved for publication on 2018-10-08 at 13:11.","DSpace SAF Submission Ingestion Package generated from Vireo submission #13027 on 2019-02-07 at 14:16:42","Made available in DSpace on 2019-02-07T20:35:53Z (GMT). No. of bitstreams: 2 WANG-DISSERTATION-2018.pdf: 5094810 bytes, checksum: b3cd3c0292c0c4da90cf7feca1115f54 (MD5) LICENSE.txt: 4208 bytes, checksum: e28a7e77a7ade8a2fd36c51579d613a6 (MD5) Previous issue date: 2018-10-08","Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:36:09Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:39:46Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:44:35Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 109807 on 2021-02-08T10:15:32Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/102783"],"dc:language":["en"],"dc:rights":["Copyright 2018 Curtis Wang"],"dc:subject":["Semiconductor Laser, Transistor Laser, optical interconnect"],"dc:title":["Microwave characterization of vertical cavity surface emitting diode laser and transistor laser"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:42Z"}