{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/101710"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/101710","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Photoluminescene and SIMS investigation on the dynamics of native defects in zinc oxide","abstract":"The technological usefulness of metal oxide often depends upon the behaviors of the defects it contains. Even small differences in defects concentration and distribution will cause significant differences in the electric and optical properties of semiconductor. Defect engineering is aiming at control the semiconductors properties through defect manipulation. The technologies involve controlling defect behaviors by defects types, concentrations, mobility and special distribution. However, beside the Si based system, the applications of defect engineering are less popular. Controlling the bulk defects via surface chemical states is a relatively new area. Surface offers efficient pathways for point defects creation and annihilation. Due to the lower coordination of the surface atoms requiring less bond creation and breakage, the activation barrier for atoms next for near surface pathways are lower than bulk. The present work uses isotopic gas-solid exchange technology to discover the diffusion-reaction network of oxygen and zinc interstitial in ZnO single crystal. Simultaneous oxygen and zinc thermal injection through the polar Zn-terminated ZnO (0001) surface showed that the injection of Zni stagnate the Oi injection but not by simple site-blocking mechanism. Room temperature photoluminescence illustrate a new possible defect network that involve the non-excluded H2 in zinc oxide. Preliminary results show a possibility that the residual hydrogen in ZnO can play important roles in the green-red emission of ZnO single crystal. Accompany with SIMS profile, we believe Zni stagnate Oi diffusion by forming non-emissive intermediates.","abstract_html":"The technological usefulness of metal oxide often depends upon the behaviors of the defects it contains. Even small differences in defects concentration and distribution will cause significant differences in the electric and optical properties of semiconductor. Defect engineering is aiming at control the semiconductors properties through defect manipulation. The technologies involve controlling defect behaviors by defects types, concentrations, mobility and special distribution. However, beside the Si based system, the applications of defect engineering are less popular. Controlling the bulk defects via surface chemical states is a relatively new area. Surface offers efficient pathways for point defects creation and annihilation. Due to the lower coordination of the surface atoms requiring less bond creation and breakage, the activation barrier for atoms next for near surface pathways are lower than bulk. The present work uses isotopic gas-solid exchange technology to discover the diffusion-reaction network of oxygen and zinc interstitial in ZnO single crystal. Simultaneous oxygen and zinc thermal injection through the polar Zn-terminated ZnO (0001) surface showed that the injection of Zni stagnate the Oi injection but not by simple site-blocking mechanism. Room temperature photoluminescence illustrate a new possible defect network that involve the non-excluded H2 in zinc oxide. Preliminary results show a possibility that the residual hydrogen in ZnO can play important roles in the green-red emission of ZnO single crystal. Accompany with SIMS profile, we believe Zni stagnate Oi diffusion by forming non-emissive intermediates.","abstract_has_math":false,"creators":["Peng, Zhiyu"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Seebauer, Edmund G."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2018,"date_issued":"2018-09-27T16:34:19Z","date_published":"2018-09-27T16:34:19Z","updated_at":"2026-07-22T22:24:40Z","subjects":["SIMS,Photoluminescence,Native Defects,Zinc Oxide"],"languages":["en"],"rights":["Copyright 2018 Zhiyu Peng"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/101710","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Seebauer, Edmund G."]},{"key":"dc:creator","label":"Author","values":["Peng, Zhiyu"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2018-09-27T16:34:19Z","2020-09-28T09:15:22Z","2018-07-16","2018-08"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["SIMS,Photoluminescence,Native Defects,Zinc Oxide"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2018 Zhiyu Peng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/101710"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The technological usefulness of metal oxide often depends upon the behaviors of the defects it contains. Even small differences in defects concentration and distribution will cause significant differences in the electric and optical properties of semiconductor. Defect engineering is aiming at control the semiconductors properties through defect manipulation. The technologies involve controlling defect behaviors by defects types, concentrations, mobility and special distribution. However, beside the Si based system, the applications of defect engineering are less popular. Controlling the bulk defects via surface chemical states is a relatively new area. Surface offers efficient pathways for point defects creation and annihilation. Due to the lower coordination of the surface atoms requiring less bond creation and breakage, the activation barrier for atoms next for near surface pathways are lower than bulk. The present work uses isotopic gas-solid exchange technology to discover the diffusion-reaction network of oxygen and zinc interstitial in ZnO single crystal. Simultaneous oxygen and zinc thermal injection through the polar Zn-terminated ZnO (0001) surface showed that the injection of Zni stagnate the Oi injection but not by simple site-blocking mechanism. Room temperature photoluminescence illustrate a new possible defect network that involve the non-excluded H2 in zinc oxide. Preliminary results show a possibility that the residual hydrogen in ZnO can play important roles in the green-red emission of ZnO single crystal. Accompany with SIMS profile, we believe Zni stagnate Oi diffusion by forming non-emissive intermediates.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2020-08-01","The student, Zhiyu Peng, accepted the attached license on 2018-07-13 at 15:00.","The student, Zhiyu Peng, submitted this Thesis for approval on 2018-07-13 at 15:07.","This Thesis was approved for publication on 2018-07-16 at 16:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #12838 on 2018-09-27 at 11:19:15","Made available in DSpace on 2018-09-27T16:34:19Z (GMT). No. of bitstreams: 2 PENG-THESIS-2018.pdf: 1345418 bytes, checksum: 1a80c948385a38618e66bbc1295d1d68 (MD5) LICENSE.txt: 4207 bytes, checksum: 78b7b286b06e0a5aaaa39bbfbf36b9bf (MD5) Previous issue date: 2018-07-16","Embargo set by: Seth Robbins for item 107810 Lift date: 2020-09-27T16:34:29Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 107810 on 2020-09-28T09:15:22Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Photoluminescene and SIMS investigation on the dynamics of native defects in zinc oxide"]}]}],"canonical_facts":{"dc:contributor":["Seebauer, Edmund G."],"dc:creator":["Peng, Zhiyu"],"dc:date":["2018-09-27T16:34:19Z","2020-09-28T09:15:22Z","2018-07-16","2018-08"],"dc:description":["The technological usefulness of metal oxide often depends upon the behaviors of the defects it contains. Even small differences in defects concentration and distribution will cause significant differences in the electric and optical properties of semiconductor. Defect engineering is aiming at control the semiconductors properties through defect manipulation. The technologies involve controlling defect behaviors by defects types, concentrations, mobility and special distribution. However, beside the Si based system, the applications of defect engineering are less popular. Controlling the bulk defects via surface chemical states is a relatively new area. Surface offers efficient pathways for point defects creation and annihilation. Due to the lower coordination of the surface atoms requiring less bond creation and breakage, the activation barrier for atoms next for near surface pathways are lower than bulk. The present work uses isotopic gas-solid exchange technology to discover the diffusion-reaction network of oxygen and zinc interstitial in ZnO single crystal. Simultaneous oxygen and zinc thermal injection through the polar Zn-terminated ZnO (0001) surface showed that the injection of Zni stagnate the Oi injection but not by simple site-blocking mechanism. Room temperature photoluminescence illustrate a new possible defect network that involve the non-excluded H2 in zinc oxide. Preliminary results show a possibility that the residual hydrogen in ZnO can play important roles in the green-red emission of ZnO single crystal. Accompany with SIMS profile, we believe Zni stagnate Oi diffusion by forming non-emissive intermediates.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2020-08-01","The student, Zhiyu Peng, accepted the attached license on 2018-07-13 at 15:00.","The student, Zhiyu Peng, submitted this Thesis for approval on 2018-07-13 at 15:07.","This Thesis was approved for publication on 2018-07-16 at 16:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #12838 on 2018-09-27 at 11:19:15","Made available in DSpace on 2018-09-27T16:34:19Z (GMT). No. of bitstreams: 2 PENG-THESIS-2018.pdf: 1345418 bytes, checksum: 1a80c948385a38618e66bbc1295d1d68 (MD5) LICENSE.txt: 4207 bytes, checksum: 78b7b286b06e0a5aaaa39bbfbf36b9bf (MD5) Previous issue date: 2018-07-16","Embargo set by: Seth Robbins for item 107810 Lift date: 2020-09-27T16:34:29Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 107810 on 2020-09-28T09:15:22Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/101710"],"dc:language":["en"],"dc:rights":["Copyright 2018 Zhiyu Peng"],"dc:subject":["SIMS,Photoluminescence,Native Defects,Zinc Oxide"],"dc:title":["Photoluminescene and SIMS investigation on the dynamics of native defects in zinc oxide"],"dc:type":["text"],"thesis:degree_discipline":["Chemical Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:40Z"}