{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/101351"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/101351","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Optoelectronic devices based upon the integration of semiconductor and gas-phase plasmas","abstract":"This Dissertation was approved for publication on 2018-04-18 at 15:13.","abstract_html":"This Dissertation was approved for publication on 2018-04-18 at 15:13.","abstract_has_math":false,"creators":["Ni, Jimmy Hengkan"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Eden, James G.","Cunningham, Brian T.","McCall, Bengamin J","Ruzic, David N."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2018,"date_issued":"2018-09-04T20:47:23Z","date_published":"2018-09-04T20:47:23Z","updated_at":"2026-07-22T22:24:38Z","subjects":["Gas-phase plasma, bipolar junction transistor, optoelectronic device"],"languages":["en"],"rights":["Copyright 2018 Jimmy Ni"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/101351","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Eden, James G.","Cunningham, Brian T.","McCall, Bengamin J","Ruzic, David N."]},{"key":"dc:creator","label":"Author","values":["Ni, Jimmy Hengkan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2018-09-04T20:47:23Z","2020-09-05T09:15:09Z","2018-04-18","2018-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Gas-phase plasma, bipolar junction transistor, optoelectronic device"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2018 Jimmy Ni"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/101351"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This Dissertation was approved for publication on 2018-04-18 at 15:13.","DSpace SAF Submission Ingestion Package generated from Vireo submission #12357 on 2018-08-31 at 17:29:59","Made available in DSpace on 2018-09-04T20:47:23Z (GMT). No. of bitstreams: 2 NI-DISSERTATION-2018.pdf: 3154565 bytes, checksum: 2ca18ed7ea1e302724a75185a3b52ef9 (MD5) LICENSE.txt: 4205 bytes, checksum: aebf3e6efc61db2690f11aa11c022177 (MD5) Previous issue date: 2018-04-18","Embargo set by: Seth Robbins for item 107436 Lift date: 2020-09-04T20:47:38Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 107436 Lift date: 2020-09-04T20:50:11Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Several optoelectronic devices based on interfacing low-temperature gas-phase plasma with a semiconductor or other solid surface have been designed, fabricated and characterized. For the first time, a microplasma-based light-emitting optoelectronic device has been demonstrated on the wafer-scale. Known as the plasma bipolar junction transistor (PBJT), this device is an npn transistor in which the collector is replaced with a microplasma. Using this device as a platform, the nonlinearity of microplasma light emission was investigated experimentally and theoretically. A strong nonlinearity in the plasma optical emission, observed when the emitter-base driving voltage has a frequency near 8 kHz, is attributed to ion acoustic wave oscillations. Accordingly, a new type of device, the plasma mixer/modulator (PMM), was proposed and demonstrated. Because the impact of microplasma propagation in a channel is fundamental to the devices central to this dissertation, a generalized microchannel structure was also fabricated and characterized. Coupling between two microcavity plasmas in a symmetric, microfabricated dielectric barrier structure has been observed by injecting charge from one of the plasmas into an intervening microchannel. Periodic modulation of the electric field strength in the injector (or electron “donor”) cavity has the effect of deforming the acceptor microplasma which exhibits two distinct and stable spatiotemporal modes. Finally, a multichannel array was fabricated onto a microscale chip for the purpose of exploring the potential of generating amplified spontaneous emission (ASE) from the array. With the help of micropatterning and fabrication techniques of polymeric optical waveguide materials, an array of stable glow discharges was generated along the waveguides. The two most intense features of the emission spectra are the 5p5(2P°3/2)6p 2[3/2]2 → 5p5(2P°3/2)6s 2[3/2]°2 and 5p5(2P°3/2)6p 2[1/2]0 → 5p5(2P°3/2)6s 2[3/2]°1 transitions of Xe which lie at 823 nm and 828 nm, respectively. Increasing the E/N in the Ar/Xe microplasma yielded a non-statistical ratio of the 823 and 828 nm emission line intensities, suggesting the presence of gain in the channels.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2020-05-01","The student, Jimmy Ni, accepted the attached license on 2018-04-18 at 13:59.","The student, Jimmy Ni, submitted this Dissertation for approval on 2018-04-18 at 14:09.","Limited Restriction Lifted for Item 107436 on 2020-09-05T09:15:09Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Optoelectronic devices based upon the integration of semiconductor and gas-phase plasmas"]}]}],"canonical_facts":{"dc:contributor":["Eden, James G.","Cunningham, Brian T.","McCall, Bengamin J","Ruzic, David N."],"dc:creator":["Ni, Jimmy Hengkan"],"dc:date":["2018-09-04T20:47:23Z","2020-09-05T09:15:09Z","2018-04-18","2018-05"],"dc:description":["This Dissertation was approved for publication on 2018-04-18 at 15:13.","DSpace SAF Submission Ingestion Package generated from Vireo submission #12357 on 2018-08-31 at 17:29:59","Made available in DSpace on 2018-09-04T20:47:23Z (GMT). No. of bitstreams: 2 NI-DISSERTATION-2018.pdf: 3154565 bytes, checksum: 2ca18ed7ea1e302724a75185a3b52ef9 (MD5) LICENSE.txt: 4205 bytes, checksum: aebf3e6efc61db2690f11aa11c022177 (MD5) Previous issue date: 2018-04-18","Embargo set by: Seth Robbins for item 107436 Lift date: 2020-09-04T20:47:38Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 107436 Lift date: 2020-09-04T20:50:11Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Several optoelectronic devices based on interfacing low-temperature gas-phase plasma with a semiconductor or other solid surface have been designed, fabricated and characterized. For the first time, a microplasma-based light-emitting optoelectronic device has been demonstrated on the wafer-scale. Known as the plasma bipolar junction transistor (PBJT), this device is an npn transistor in which the collector is replaced with a microplasma. Using this device as a platform, the nonlinearity of microplasma light emission was investigated experimentally and theoretically. A strong nonlinearity in the plasma optical emission, observed when the emitter-base driving voltage has a frequency near 8 kHz, is attributed to ion acoustic wave oscillations. Accordingly, a new type of device, the plasma mixer/modulator (PMM), was proposed and demonstrated. Because the impact of microplasma propagation in a channel is fundamental to the devices central to this dissertation, a generalized microchannel structure was also fabricated and characterized. Coupling between two microcavity plasmas in a symmetric, microfabricated dielectric barrier structure has been observed by injecting charge from one of the plasmas into an intervening microchannel. Periodic modulation of the electric field strength in the injector (or electron “donor”) cavity has the effect of deforming the acceptor microplasma which exhibits two distinct and stable spatiotemporal modes. Finally, a multichannel array was fabricated onto a microscale chip for the purpose of exploring the potential of generating amplified spontaneous emission (ASE) from the array. With the help of micropatterning and fabrication techniques of polymeric optical waveguide materials, an array of stable glow discharges was generated along the waveguides. The two most intense features of the emission spectra are the 5p5(2P°3/2)6p 2[3/2]2 → 5p5(2P°3/2)6s 2[3/2]°2 and 5p5(2P°3/2)6p 2[1/2]0 → 5p5(2P°3/2)6s 2[3/2]°1 transitions of Xe which lie at 823 nm and 828 nm, respectively. Increasing the E/N in the Ar/Xe microplasma yielded a non-statistical ratio of the 823 and 828 nm emission line intensities, suggesting the presence of gain in the channels.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2020-05-01","The student, Jimmy Ni, accepted the attached license on 2018-04-18 at 13:59.","The student, Jimmy Ni, submitted this Dissertation for approval on 2018-04-18 at 14:09.","Limited Restriction Lifted for Item 107436 on 2020-09-05T09:15:09Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/101351"],"dc:language":["en"],"dc:rights":["Copyright 2018 Jimmy Ni"],"dc:subject":["Gas-phase plasma, bipolar junction transistor, optoelectronic device"],"dc:title":["Optoelectronic devices based upon the integration of semiconductor and gas-phase plasmas"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:38Z"}