{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/101307"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/101307","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Three-dimensional (3D) electronics by compressive buckling process","abstract":"A compressive force from releasing a pre-stretched elastomer substrate such as PDMS, Ecoflex, and Dragon Skin induces a 2D precursor to realize a sophisticated 3D electronic structure of a resistor, capacitor and transistor. Conventional microfabrication methods create 3D electronic components, and the electronic properties of the components are the same as those of conventional devices. 3D constant and variable resistors, capacitors, and transistors are fabricated and investigated before and after the compressive buckling process. Highly phosphorus doped silicon nanomembranes from a silicon-on-insulator wafer are transfer-printed onto the 3D structures and introduce changes of the electrical properties under compressive strain. A commercial chip from X-FAB Semiconductor Foundries is successfully placed onto a 2D precursor and formed into a 3D structure by the buckling method. With no limit or constraint on 3D structures, new advantages previously unintroduced from 2D electronic devices would be obtained from this new technique of compressive buckling process.","abstract_html":"A compressive force from releasing a pre-stretched elastomer substrate such as PDMS, Ecoflex, and Dragon Skin induces a 2D precursor to realize a sophisticated 3D electronic structure of a resistor, capacitor and transistor. Conventional microfabrication methods create 3D electronic components, and the electronic properties of the components are the same as those of conventional devices. 3D constant and variable resistors, capacitors, and transistors are fabricated and investigated before and after the compressive buckling process. Highly phosphorus doped silicon nanomembranes from a silicon-on-insulator wafer are transfer-printed onto the 3D structures and introduce changes of the electrical properties under compressive strain. A commercial chip from X-FAB Semiconductor Foundries is successfully placed onto a 2D precursor and formed into a 3D structure by the buckling method. With no limit or constraint on 3D structures, new advantages previously unintroduced from 2D electronic devices would be obtained from this new technique of compressive buckling process.","abstract_has_math":false,"creators":["Kim, Jae Hwan"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Rogers, John A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2018,"date_issued":"2018-09-04T20:47:12Z","date_published":"2018-09-04T20:47:12Z","updated_at":"2026-07-22T22:24:38Z","subjects":["Three-dimensional electronics, Compressive buckling, Transfer printing"],"languages":["en"],"rights":["Copyright 2018 Jae Hwan Kim"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/101307","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rogers, John A."]},{"key":"dc:creator","label":"Author","values":["Kim, Jae Hwan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2018-09-04T20:47:12Z","2020-09-05T09:15:16Z","2018-04-15","2018-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Three-dimensional electronics, Compressive buckling, Transfer printing"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2018 Jae Hwan Kim"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/101307"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A compressive force from releasing a pre-stretched elastomer substrate such as PDMS, Ecoflex, and Dragon Skin induces a 2D precursor to realize a sophisticated 3D electronic structure of a resistor, capacitor and transistor. Conventional microfabrication methods create 3D electronic components, and the electronic properties of the components are the same as those of conventional devices. 3D constant and variable resistors, capacitors, and transistors are fabricated and investigated before and after the compressive buckling process. Highly phosphorus doped silicon nanomembranes from a silicon-on-insulator wafer are transfer-printed onto the 3D structures and introduce changes of the electrical properties under compressive strain. A commercial chip from X-FAB Semiconductor Foundries is successfully placed onto a 2D precursor and formed into a 3D structure by the buckling method. With no limit or constraint on 3D structures, new advantages previously unintroduced from 2D electronic devices would be obtained from this new technique of compressive buckling process.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2020-05-01","The student, Jae Hwan Kim, accepted the attached license on 2018-04-14 at 18:21.","The student, Jae Hwan Kim, submitted this Thesis for approval on 2018-04-14 at 18:27.","This Thesis was approved for publication on 2018-04-15 at 12:05.","DSpace SAF Submission Ingestion Package generated from Vireo submission #12220 on 2018-08-31 at 17:28:45","Made available in DSpace on 2018-09-04T20:47:12Z (GMT). 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Conventional microfabrication methods create 3D electronic components, and the electronic properties of the components are the same as those of conventional devices. 3D constant and variable resistors, capacitors, and transistors are fabricated and investigated before and after the compressive buckling process. Highly phosphorus doped silicon nanomembranes from a silicon-on-insulator wafer are transfer-printed onto the 3D structures and introduce changes of the electrical properties under compressive strain. A commercial chip from X-FAB Semiconductor Foundries is successfully placed onto a 2D precursor and formed into a 3D structure by the buckling method. With no limit or constraint on 3D structures, new advantages previously unintroduced from 2D electronic devices would be obtained from this new technique of compressive buckling process.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2020-05-01","The student, Jae Hwan Kim, accepted the attached license on 2018-04-14 at 18:21.","The student, Jae Hwan Kim, submitted this Thesis for approval on 2018-04-14 at 18:27.","This Thesis was approved for publication on 2018-04-15 at 12:05.","DSpace SAF Submission Ingestion Package generated from Vireo submission #12220 on 2018-08-31 at 17:28:45","Made available in DSpace on 2018-09-04T20:47:12Z (GMT). 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