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","Doctor of Philosophy (Ph.D.)","College of Engineering and Computer Science","Electrical and Computer Engineering","Electrical Engineering"]},{"key":"dc:description.abstract","label":"Abstract","values":["Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. With more accurate extrapolation method, we present a direct and accurate approach to modeling empirically the 0.18-ìm MOS reliability, which can predict the MOS lifetime as a function of drain voltage and channel length. With the further study on physical mechanism of MOS device degradation, experimental results indicated that the widely used power-law model for lifetime estimation is inaccurate for deep submicron devices. A better lifetime prediction method is proposed for the deep-submicron devices. We also develop a Spice-like reliability model for advanced radio frequency RF MOS devices and implement our reliability model into SpectreRF circuit simulator via Verilog-A HDL (Hardware Description Language). This RF reliability model can be conveniently used to simulate RF circuit performance degradation"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit"]}]}],"canonical_facts":{"dc:contributor":["Liou, Juin J."],"dc:creator":["Cui, Zhi"],"dc:description":["If this is your thesis or dissertation, and want to learn how to access it or for more information about readership statistics, contact us at STARS@ucf.edu
","Doctor of Philosophy (Ph.D.)","College of Engineering and Computer Science","Electrical and Computer Engineering","Electrical Engineering"],"dc:description.abstract":["Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. With more accurate extrapolation method, we present a direct and accurate approach to modeling empirically the 0.18-ìm MOS reliability, which can predict the MOS lifetime as a function of drain voltage and channel length. With the further study on physical mechanism of MOS device degradation, experimental results indicated that the widely used power-law model for lifetime estimation is inaccurate for deep submicron devices. A better lifetime prediction method is proposed for the deep-submicron devices. We also develop a Spice-like reliability model for advanced radio frequency RF MOS devices and implement our reliability model into SpectreRF circuit simulator via Verilog-A HDL (Hardware Description Language). This RF reliability model can be conveniently used to simulate RF circuit performance degradation"],"dc:format":["application/pdf"],"dc:identifier":["CFE0000476"],"dc:identifier.uri":["https://stars.library.ucf.edu/etd/300"],"dc:language":["English"],"dc:subject":["MOSFET","reliability","lifetime","Hot-Carrier","modeling","RF","Verilog-A","simulation","Cadence","Electrical and Computer Engineering","Electrical and Electronics","Engineering"],"dc:title":["Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit"],"dc:type":["Doctoral Dissertation (Open Access)"]},"updated_at":"2026-07-24T05:08:31Z"}