{"id":{"repo_id":"ubc","oai_identifier":"oai:circle.library.ubc.ca:2429/1730"},"canonical_url":"https://search.dev.ndltd.org/etd/ubc/oai:circle.library.ubc.ca:2429/1730","repository":{"repo_id":"ubc","name":"University of British Columbia","base_url":"http://circle.library.ubc.ca/oai/request"},"display":{"title":"Plastic deformation of gallium arsenide","abstract":"The present investigation was undertaken to determine the validity of Haasen's model of plastic deformation for GaAs over an extended range of temperatures and to observe the relation between the dislocation density in the deformed samples and the deformation variables. The experimental results show a discrepancy with the predictions of the model. This discrepancy and also the different values of the activation parameters reported in the literature was explained in terms of the contributions of temperature induced effects to the plastic strain rate . The dislocation densities in the deformed samples obtained by counting dislocation etch pits indicate that the density of dislocations in deformed GaAs is directly related to the applied stress, the plastic strain rate, the test temperature while being inversely related to the applied strain rate.","abstract_html":"The present investigation was undertaken to determine the validity of Haasen's model of plastic deformation for GaAs over an extended range of temperatures and to observe the relation between the dislocation density in the deformed samples and the deformation variables. The experimental results show a discrepancy with the predictions of the model. This discrepancy and also the different values of the activation parameters reported in the literature was explained in terms of the contributions of temperature induced effects to the plastic strain rate . The dislocation densities in the deformed samples obtained by counting dislocation etch pits indicate that the density of dislocations in deformed GaAs is directly related to the applied stress, the plastic strain rate, the test temperature while being inversely related to the applied strain rate.","abstract_has_math":false,"creators":["Udevi-Aruevoru, Ikechukwu"],"institution":"University of British Columbia","degree_name":"Master of Science - MSc","degree_level":"master's","degree_discipline":"Materials Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1991,"date_issued":"1991","date_published":"1991","updated_at":"2026-07-24T05:07:37Z","subjects":[],"languages":["eng"],"rights":["For non-commercial purposes only, such as research, private study and education. 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This discrepancy and also the different values of the activation parameters reported in the literature was explained in terms of the contributions of temperature induced effects to the plastic strain rate . The dislocation densities in the deformed samples obtained by counting dislocation etch pits indicate that the density of dislocations in deformed GaAs is directly related to the applied stress, the plastic strain rate, the test temperature while being inversely related to the applied strain rate."]},{"key":"dc:format","label":"Dc Format","values":["4853509","application/pdf"]},{"key":"dc:title","label":"Title","values":["Plastic deformation of gallium arsenide"]}]}],"canonical_facts":{"dc:creator":["Udevi-Aruevoru, Ikechukwu"],"dc:date":["1991"],"dc:description":["The present investigation was undertaken to determine the validity of Haasen's model of plastic deformation for GaAs over an extended range of temperatures and to observe the relation between the dislocation density in the deformed samples and the deformation variables. The experimental results show a discrepancy with the predictions of the model. This discrepancy and also the different values of the activation parameters reported in the literature was explained in terms of the contributions of temperature induced effects to the plastic strain rate . The dislocation densities in the deformed samples obtained by counting dislocation etch pits indicate that the density of dislocations in deformed GaAs is directly related to the applied stress, the plastic strain rate, the test temperature while being inversely related to the applied strain rate."],"dc:format":["4853509","application/pdf"],"dc:identifier":["http://hdl.handle.net/2429/1730","http://circle.library.ubc.ca/bitstream/2429/1730/1/ubc_1992_spring_udevi-aruevoru_ikechukwu.pdf"],"dc:language":["eng"],"dc:publisher":["University of British Columbia"],"dc:rights":["For non-commercial purposes only, such as research, private study and education. 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