{"id":{"repo_id":"ubc","oai_identifier":"oai:circle.library.ubc.ca:2429/1357"},"canonical_url":"https://search.dev.ndltd.org/etd/ubc/oai:circle.library.ubc.ca:2429/1357","repository":{"repo_id":"ubc","name":"University of British Columbia","base_url":"http://circle.library.ubc.ca/oai/request"},"display":{"title":"Etching of Gallium Arsenide with atomic hydrogen","abstract":"An optical interferometric method is used to make in-situ observations of continuous etching of the (100) GaAs surface during exposure to a known concentration of thermalised hydrogen atoms downstream from an H₂ plasma. Etch rates between 3 and 9 nm/min are followed at constant temperature within the range 229 - 360 °C. Increasing substrate temperature leads to increased rates of reaction. A Pt wire is used as an isothermal calorimeter to determine absolute H atom partial pressures on the order of 5 mTorr. Analysis of etch rate dependence on atomic hydrogen concentration verifies the surface reaction follows close to a first order rate law with respect to the hydrogen atom concentration and an Arrhenius analysis of the etch rate data yields an activation energy of 7(2) kcal/mol = 29(7) kJ/mol = 0.31(7) eV. Rate coefficients for the H + GaAs etching reaction were found in the aforementioned temperature range to have the temperature dependence kT = 10 ⁵⁷±⁰‧⁷ nm min⁻¹ Torr⁻¹ exp(-29±7 kJ/mol)/RT. Scanning electron microscope photomicrographs of etched samples reveal that large scale crystallographic etching occurs resulting in textured (100) GaAs surfaces and x-ray photoelectron spectroscopy demonstrated these surfaces were gallium-rich.","abstract_html":"An optical interferometric method is used to make in-situ observations of continuous etching of the (100) GaAs surface during exposure to a known concentration of thermalised hydrogen atoms downstream from an H₂ plasma. Etch rates between 3 and 9 nm/min are followed at constant temperature within the range 229 - 360 °C. Increasing substrate temperature leads to increased rates of reaction. A Pt wire is used as an isothermal calorimeter to determine absolute H atom partial pressures on the order of 5 mTorr. Analysis of etch rate dependence on atomic hydrogen concentration verifies the surface reaction follows close to a first order rate law with respect to the hydrogen atom concentration and an Arrhenius analysis of the etch rate data yields an activation energy of 7(2) kcal/mol = 29(7) kJ/mol = 0.31(7) eV. Rate coefficients for the H + GaAs etching reaction were found in the aforementioned temperature range to have the temperature dependence kT = 10 ⁵⁷±⁰‧⁷ nm min⁻¹ Torr⁻¹ exp(-29±7 kJ/mol)/RT. Scanning electron microscope photomicrographs of etched samples reveal that large scale crystallographic etching occurs resulting in textured (100) GaAs surfaces and x-ray photoelectron spectroscopy demonstrated these surfaces were gallium-rich.","abstract_has_math":false,"creators":["Elzey, John W."],"institution":"University of British Columbia","degree_name":"Master of Science - MSc","degree_level":"master's","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1992,"date_issued":"1992","date_published":"1992","updated_at":"2026-07-24T05:07:17Z","subjects":[],"languages":["eng"],"rights":["For non-commercial purposes only, such as research, private study and education. 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Analysis of etch rate dependence on atomic hydrogen concentration verifies the surface reaction follows close to a first order rate law with respect to the hydrogen atom concentration and an Arrhenius analysis of the etch rate data yields an activation energy of 7(2) kcal/mol = 29(7) kJ/mol = 0.31(7) eV. Rate coefficients for the H + GaAs etching reaction were found in the aforementioned temperature range to have the temperature dependence kT = 10 ⁵⁷±⁰‧⁷ nm min⁻¹ Torr⁻¹ exp(-29±7 kJ/mol)/RT. Scanning electron microscope photomicrographs of etched samples reveal that large scale crystallographic etching occurs resulting in textured (100) GaAs surfaces and x-ray photoelectron spectroscopy demonstrated these surfaces were gallium-rich."]},{"key":"dc:format","label":"Dc Format","values":["5076269","application/pdf"]},{"key":"dc:title","label":"Title","values":["Etching of Gallium Arsenide with atomic hydrogen"]}]}],"canonical_facts":{"dc:creator":["Elzey, John W."],"dc:date":["1992"],"dc:description":["An optical interferometric method is used to make in-situ observations of continuous etching of the (100) GaAs surface during exposure to a known concentration of thermalised hydrogen atoms downstream from an H₂ plasma. Etch rates between 3 and 9 nm/min are followed at constant temperature within the range 229 - 360 °C. Increasing substrate temperature leads to increased rates of reaction. A Pt wire is used as an isothermal calorimeter to determine absolute H atom partial pressures on the order of 5 mTorr. Analysis of etch rate dependence on atomic hydrogen concentration verifies the surface reaction follows close to a first order rate law with respect to the hydrogen atom concentration and an Arrhenius analysis of the etch rate data yields an activation energy of 7(2) kcal/mol = 29(7) kJ/mol = 0.31(7) eV. Rate coefficients for the H + GaAs etching reaction were found in the aforementioned temperature range to have the temperature dependence kT = 10 ⁵⁷±⁰‧⁷ nm min⁻¹ Torr⁻¹ exp(-29±7 kJ/mol)/RT. Scanning electron microscope photomicrographs of etched samples reveal that large scale crystallographic etching occurs resulting in textured (100) GaAs surfaces and x-ray photoelectron spectroscopy demonstrated these surfaces were gallium-rich."],"dc:format":["5076269","application/pdf"],"dc:identifier":["http://hdl.handle.net/2429/1357","http://circle.library.ubc.ca/bitstream/2429/1357/3/ubc_1993_spring_elzey_john.pdf"],"dc:language":["eng"],"dc:publisher":["University of British Columbia"],"dc:rights":["For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use."],"dc:title":["Etching of Gallium Arsenide with atomic hydrogen"],"dc:type":["Text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["master's"],"thesis:degree_name":["Master of Science - MSc"],"thesis:institution_name":["University of British Columbia"]},"updated_at":"2026-07-24T05:07:17Z"}