V-band low noise amplifier and mixer design using 90 nm CMOS technology

This thesis is the result of more than three years research work at TU Berlin. Several radio frequency integrated circuits have been designed in a commercial CMOS technology, the TSMC 90nm, and measured on-wafer within the project WiONet. The author of this work has been focused on the design of the receiver part of a V-band high data-rate millimetre-wave transceiver and particularly on two important building blocks such as lownoise amplifier and down-conversion mixer. At first, the specifications of the receiver and its sub-blocks have been extracted applying to the planned transceiver system the requirements obtained by the IEEE 802.15.3c standard. Afterwards, a deep study of the passive and active components provided by the technology and a careful characterization of the structures to be used have been carried out in order to get familiar with the technology and optimize its use. The noise behaviour of several amplifier and mixer topologies has been deeply studied, leading to the design and the characterization of several CMOS circuits. Finally, a four stage fully differential common source low noise amplifier and a fully differential Gilbert cell with resonating current bleeding network have been chosen for being part of the WiONet system. Both circuits showed state of the art performance in terms of gain, linearity, noise and power consumption. Furthermore, they fulfil the system requirements within the whole V-band.

Author dc:creator

• Malignaggi, Andrea

Advisor dc:contributor.advisor

• Böck, Georg

Licence dc:rights.uri

• https://creativecommons.org/licenses/by/4.0/

Language dc:language.iso

en

Identifier URI

http://dx.doi.org/10.14279/depositonce-5403

OAI identifier oai:identifier

oai:depositonce.tu-berlin.de:11303/5798