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The University of Texas at Austin

III-V optoelectronic devices in the BGaInAs material system

Abstract

dc:description.abstract

In this work, we investigate the potential of direct-bandgap, III-V materials for lattice-matched absorbers and emitters on silicon. Leveraging the small lattice constant of the boron pnictides, BGaInAs can be grown lattice-matched or nearly lattice-matched to Si; however, the difficult growth mechanics of elemental boron and the highly mismatched nature of BGaInAs have limited prior synthesis of this alloy to compositions outside those required for lattice-matched growth on Si and outside of technologically interesting wavelengths. Therefore, this work focuses on BGaInAs growth on GaAs. Focusing on GaAs reduces the simultaneous amount of boron and indium required to maintain lattice-matching or near lattice-matching as compared to Si. Here, we exploit the non-equilibrium growth properties of molecular beam epitaxy to simultaneously increase the incorporation of boron and indium - enabling the longest wavelength emission from BGaInAs, the first boron-containing active region electrically injected emitter, and all-BGaInAs photodetectors. Our approach is the optimization of BGaInAs on GaAs, focusing on further extending emission wavelengths and increasing B, In concentrations in lattice-matched detectors in order to develop understanding of how increasing B concentrations (and requisite In concentrations) affect BGaInAs-based devices, thus providing a path towards lattice-matched optoelectronic devices on Si.

Degree

thesis:*
Name thesis:degree_name
Doctor of Philosophy
Level thesis:degree_level
Doctoral
Discipline thesis:degree_discipline
Electrical and Computer Engineering
Grantor
The University of Texas at Austin
Year dc:date.issued
2022

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • El-Jaroudi, Rasha Huntoon
Advisor dc:contributor.advisor
  • Bank, Seth Robert
Committee members dc:contributor.committeemember
  • Dodabalapur, Ananth
  • Hutter, Tanya
  • Wasserman, Daniel
  • Yu, Edward T

Subjects

dc:subject × 2

Identifiers

dc:identifier.*
OAI identifier oai:identifier
oai:repositories.lib.utexas.edu:2152/123805

Chain of custody

source
Harvested from
University of Texas
Base URL
repositories.lib.utexas.edu/server/oai/request
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

El-Jaroudi, Rasha Huntoon. III-V optoelectronic devices in the BGaInAs material system. Doctoral thesis, The University of Texas at Austin, 2022. https://hdl.handle.net/2152/123805