Novel Growth of Chemical Vapor Deposited Graphene on Molten Tin Metal

Since the discovery of two-dimensional (2D) graphene in 2004, it has attracted increasing research interest around the globe due to its remarkable properties and numerous applications. Chemical vapor deposition (CVD) has been widely used to grow graphene owing to its scalability, controllability, and low-cost features. Several studies have reported CVD graphene growth on solid substrates with recent developments on the use of liquid substrates. However, while there are many studies reporting growth on solid and liquid copper substrates, no study has reported mass production of graphene combined with uniform film growth on molten tin substrate. It is believed that using the CVD technique, large and uniform sheets of graphene can be produced just like glass. In this research, CVD graphene films were synthesized on molten tin (Sn) at ambient pressure under varying growth times (5–15 min), precursor flow rates (CH4:H2 of 0.1–0.5), and temperatures (950–1100 °C). Characterization of graphene films through microscopy and spectroscopy techniques revealed the effect of growth parameters on the quality and number of graphene layers. Graphene films of bilayer to a few layers having high quality were synthesized. Furthermore, graphene film transfer using a direct transfer approach to an insulating mica substrate without the use of toxic chemicals was accomplished with graphene films of ~ 2.7 nm thickness and a high electrical conductivity of ~ 7.1 × 105 S/m. Graphene growth on Sn is a scalable process for high-quality mass production of graphene films with large areas for applications in electronic devices.

Name thesis:degree_name

Doctor of Philosophy

Level thesis:degree_level

Doctoral

Discipline thesis:degree_discipline

Materials Science

Grantor

Texas State University

Year dc:date.issued

2021

Author dc:creator

• Adetayo, Adeniji

Advisor dc:contributor.advisor

• Beall, G. W.

Committee members dc:contributor.committeemember

• Rhodes, Christopher P.
• Lewis, Lysle Kevin
• Chen, Maggie Yihong
• Chittenden, William T.

• chemical vapor deposition
• graphene
• molten tin

Language dc:language.iso

en

Handle dc:identifier.uri

https://hdl.handle.net/10877/17831

OAI identifier oai:identifier

oai:digital.library.txst.edu:10877/17831