Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures
type: CreativeWork
description: An experimental and theoretical approach is taken to determine the effect of a heterojunction on the effective work function in a metal/high-? gate stack, the characteristics of aqueous hydrochloric acid cleaned (aq-HCl) GaN surface and the interface between GaN and Al2O3, HfO2 and GaON. The investigation of the effect of a heterojunction on the effective work function in a metal/high-? gate stack found that when a Ge/Si heterostructure on silicon is lightly doped and sufficiently thin, the work function can be extracted in a manner similar to that for a simple silicon substrate. Modifications to the terraced oxide structure are proposed to remove oxidation effects of the alternate channel materials. The extracted work function of TiN with various thicknesses on HfSiO is found to be in agreement with that of TiN on a silicon substrate. X-ray and ultraviolet photoelectron spectroscopy are used to observe the interface electronic states at the GaN (0001) and Al2O3, HfO2 and GaON dielectric interfaces. The GaN is cleaned using aqueous HCl prior to thermal oxidation to form GaON and atomic layer deposition of Al2O3 and HfO2. This was followed by a post deposition anneal. The GaN/HfO2 and GaN/Al2O3 interfaces exhibited dipoles of 1.6 eV and 0.4 eV +/- 0.2 eV, respectively. It is determined that the formation of an interfacial layer at the GaN/HfO2 interface is the primary cause of the larger dipole. Due to the knowledge of the formation of an interfacial GaOx or GaON layer during atomic layer deposition of HfO2, a better understanding of the GaN/GaON interface is needed. To accomplish this task, the interface electronic states at the GaN(0001) and GaON interface are observed using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). XPS and UPS analysis of the GaN/GaON interface resulted in the calculation of a -2.7 eV +/- 0.2 eV dipole assuming that the core level shifts are only representative of the GaN band bending at the interface. If it is assumed that t…
abstract: An experimental and theoretical approach is taken to determine the effect of a heterojunction on the effective work function in a metal/high-? gate stack, the characteristics of aqueous hydrochloric acid cleaned (aq-HCl) GaN surface and the interface between GaN and Al2O3, HfO2 and GaON. The investigation of the effect of a heterojunction on the effective work function in a metal/high-? gate stack found that when a Ge/Si heterostructure on silicon is lightly doped and sufficiently thin, the work function can be extracted in a manner similar to that for a simple silicon substrate. Modifications to the terraced oxide structure are proposed to remove oxidation effects of the alternate channel materials. The extracted work function of TiN with various thicknesses on HfSiO is found to be in agreement with that of TiN on a silicon substrate. X-ray and ultraviolet photoelectron spectroscopy are used to observe the interface electronic states at the GaN (0001) and Al2O3, HfO2 and GaON dielectric interfaces. The GaN is cleaned using aqueous HCl prior to thermal oxidation to form GaON and atomic layer deposition of Al2O3 and HfO2. This was followed by a post deposition anneal. The GaN/HfO2 and GaN/Al2O3 interfaces exhibited dipoles of 1.6 eV and 0.4 eV +/- 0.2 eV, respectively. It is determined that the formation of an interfacial layer at the GaN/HfO2 interface is the primary cause of the larger dipole. Due to the knowledge of the formation of an interfacial GaOx or GaON layer during atomic layer deposition of HfO2, a better understanding of the GaN/GaON interface is needed. To accomplish this task, the interface electronic states at the GaN(0001) and GaON interface are observed using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). XPS and UPS analysis of the GaN/GaON interface resulted in the calculation of a -2.7 eV +/- 0.2 eV dipole assuming that the core level shifts are only representative of the GaN band bending at the interface. If it is assumed that t…
author: Coan, Mary
language: en_US
keywords: GaN, high-k dielectrics, band offsets, DFT, oxidation, GaON, ALD, XPS, UPS, TEM
date published: 2012-10-19
date modified: 2026-07-27T21:19:29Z
provider: Texas Digital Library
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Texas Digital Library

PropertyValue
property ID: Handle
value: http://hdl.handle.net/1969.1/ETD-TAMU-2012-08-11414