Growth and Characterization of (InGa)2O3 Alloys

To create the next generation of power devices, new materials are being developed for use as wide bandgap semiconductors. Wide bandgap oxides are receiving attention as their properties are conducive to improved power and high breakdown devices. The indium gallium oxide alloy makes it one of the candidates that can be used in heterostructures in which the electrical and optical properties can be tuned. While research has been concentrated on the development and understanding of the properties of In2O3 and Ga2O3 thin films, there is a need to develop an understanding of the structure and behavior of alloys composed of these metal oxides. This research demonstrates the growth of the cubic form of (InxGa1-x)2O3 for x = 0.6, 0.8, and 1.0 on sapphire (0001) substrates using pulsed laser deposition. Single crystal films are identified by peaks corresponding to the (222) and (444) planes using high-resolution x-ray diffraction. The optical constants (n, k) are found to be between 1.9-2.0 and 0.0005-0.5 respectively using spectroscopic ellipsometry. The bandgap of the alloys is shown to be 3.68-3.86 eV, with the increase due to an increased gallium composition. Mobility and resistivity of the alloys are ~1019-1020 cm2/V-1s-1 and ~10-3-10-2 Ω·cm respectively and vary as a result of partial oxygen pressure during growth. This high carrier concentrations with wide bandgap also makes this material useful for transparent conductors and UV applications.

Author dc:creator

• Samuels, Brian

Contributors dc:contributor

• Droopad, Ravindranath
• Larson, Larry
• Chen, Maggie Yihong

• indium oxide
• gallium oxide
• PLD

Language dc:language

en

Identifier

Samuels, B. (2018). Growth and characterization of (InGa)2O3 alloys [Master's thesis, Texas State University].

OAI identifier oai:identifier

oai:tdl-ir.tdl.org:10877/15164