{"id":{"repo_id":"siu-theses","oai_identifier":"oai:opensiuc.lib.siu.edu:dissertations-1710"},"canonical_url":"https://search.dev.ndltd.org/etd/siu-theses/oai:opensiuc.lib.siu.edu:dissertations-1710","repository":{"repo_id":"siu-theses","name":"Southern Illinois University","base_url":"https://opensiuc.lib.siu.edu/do/oai/"},"display":{"title":"Interplay of Electrical, Mechanical and Thermal Fields in III-N Nanostructures for LED Applications","abstract":"This work aims at exploring the competing effects of various internal/built-in fields on the electronic structure and optical properties of III-N nanostructured (Quantum Dots and disk-in-a-wire) LEDs using a multiscale modeling approach. The objective is three-fold: (1) calculate the strain distribution, optical transition rates and one-particle electronic states using a 10-band sp<super>3</super>s<super>*</super> tight-binding framework; (2) to compute the effects of piezoelectric and pyroelectric polarization on the optical transition rates; (3) to model piezoelectricity in the wurtzite lattice, we have considered four different polarization models (based on the experimental /bulk and ab initio coefficients) in increased order of accuracy; (4) to study the origin and effects of these four competing internal fields on the electronic structure of self-assembled InN/GaN quantum dots having three different geometries, namely, box, dome, and pyramid; (5) integrating the NEMO3-D with commercial TCAD tool Synopsys to determine the terminal electrical and optical characteristics of InGaN/GaN disk-in-a-wire LEDs; and (6) finally to propose optimum device specifications for InGaN/GaN disk-in-a-wire LEDs to achieve maximum Internal Quantum Efficiency (IQE).","abstract_html":"This work aims at exploring the competing effects of various internal/built-in fields on the electronic structure and optical properties of III-N nanostructured (Quantum Dots and disk-in-a-wire) LEDs using a multiscale modeling approach. The objective is three-fold: (1) calculate the strain distribution, optical transition rates and one-particle electronic states using a 10-band sp&lt;super&gt;3&lt;/super&gt;s&lt;super&gt;*&lt;/super&gt; tight-binding framework; (2) to compute the effects of piezoelectric and pyroelectric polarization on the optical transition rates; (3) to model piezoelectricity in the wurtzite lattice, we have considered four different polarization models (based on the experimental /bulk and ab initio coefficients) in increased order of accuracy; (4) to study the origin and effects of these four competing internal fields on the electronic structure of self-assembled InN/GaN quantum dots having three different geometries, namely, box, dome, and pyramid; (5) integrating the NEMO3-D with commercial TCAD tool Synopsys to determine the terminal electrical and optical characteristics of InGaN/GaN disk-in-a-wire LEDs; and (6) finally to propose optimum device specifications for InGaN/GaN disk-in-a-wire LEDs to achieve maximum Internal Quantum Efficiency (IQE).","abstract_has_math":false,"creators":["Yalavarthi, Krishna Kumari"],"institution":null,"degree_name":"Doctor of Philosophy","degree_level":"Campus Only Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Ahmed, Shaikh"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013-05-01T07:00:00Z","date_published":"2013-05-01T07:00:00Z","updated_at":"2026-07-24T04:34:11Z","subjects":[],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://opensiuc.lib.siu.edu/dissertations/708","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Ahmed, Shaikh"]},{"key":"dc:creator","label":"Author","values":["Yalavarthi, Krishna Kumari"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Campus Only Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Doctor of Philosophy"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://opensiuc.lib.siu.edu/dissertations/708"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This work aims at exploring the competing effects of various internal/built-in fields on the electronic structure and optical properties of III-N nanostructured (Quantum Dots and disk-in-a-wire) LEDs using a multiscale modeling approach. The objective is three-fold: (1) calculate the strain distribution, optical transition rates and one-particle electronic states using a 10-band sp<super>3</super>s<super>*</super> tight-binding framework; (2) to compute the effects of piezoelectric and pyroelectric polarization on the optical transition rates; (3) to model piezoelectricity in the wurtzite lattice, we have considered four different polarization models (based on the experimental /bulk and ab initio coefficients) in increased order of accuracy; (4) to study the origin and effects of these four competing internal fields on the electronic structure of self-assembled InN/GaN quantum dots having three different geometries, namely, box, dome, and pyramid; (5) integrating the NEMO3-D with commercial TCAD tool Synopsys to determine the terminal electrical and optical characteristics of InGaN/GaN disk-in-a-wire LEDs; and (6) finally to propose optimum device specifications for InGaN/GaN disk-in-a-wire LEDs to achieve maximum Internal Quantum Efficiency (IQE)."]},{"key":"dc:title","label":"Title","values":["Interplay of Electrical, Mechanical and Thermal Fields in III-N Nanostructures for LED Applications"]}]}],"canonical_facts":{"dc:contributor":["Ahmed, Shaikh"],"dc:creator":["Yalavarthi, Krishna Kumari"],"dc:description.abstract":["This work aims at exploring the competing effects of various internal/built-in fields on the electronic structure and optical properties of III-N nanostructured (Quantum Dots and disk-in-a-wire) LEDs using a multiscale modeling approach. The objective is three-fold: (1) calculate the strain distribution, optical transition rates and one-particle electronic states using a 10-band sp<super>3</super>s<super>*</super> tight-binding framework; (2) to compute the effects of piezoelectric and pyroelectric polarization on the optical transition rates; (3) to model piezoelectricity in the wurtzite lattice, we have considered four different polarization models (based on the experimental /bulk and ab initio coefficients) in increased order of accuracy; (4) to study the origin and effects of these four competing internal fields on the electronic structure of self-assembled InN/GaN quantum dots having three different geometries, namely, box, dome, and pyramid; (5) integrating the NEMO3-D with commercial TCAD tool Synopsys to determine the terminal electrical and optical characteristics of InGaN/GaN disk-in-a-wire LEDs; and (6) finally to propose optimum device specifications for InGaN/GaN disk-in-a-wire LEDs to achieve maximum Internal Quantum Efficiency (IQE)."],"dc:identifier":["https://opensiuc.lib.siu.edu/dissertations/708"],"dc:title":["Interplay of Electrical, Mechanical and Thermal Fields in III-N Nanostructures for LED Applications"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Campus Only Dissertation"],"thesis:degree_name":["Doctor of Philosophy"]},"updated_at":"2026-07-24T04:34:11Z"}