{"id":{"repo_id":"sask","oai_identifier":"oai:harvest.usask.ca:10388/7331"},"canonical_url":"https://search.dev.ndltd.org/etd/sask/oai:harvest.usask.ca:10388/7331","repository":{"repo_id":"sask","name":"University of Saskatchewan","base_url":"https://harvest.usask.ca/server/oai/request"},"display":{"title":"X-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors","abstract":"Amorphous selenium and its alloy are important materials for flat panel digital X-ray detectors. The performance of the X-ray detector is directly related to the carrier mobility and carrier-trapping lifetime of amorphous selenium and its alloy. An experiment was conducted to examine the dose rate effects on the carrier-trapping lifetime reduction of amorphous selenium alloy due to X-ray irradiation. In addition, an experiment was conducted to investigate the temperature effects on X-ray induced carrier-trapping lifetime decrease and relaxation process. X-ray induced capacitance changes have been investigated as well. The interrupted field time of flight (IFTOF) techniques are used in order to acquire the carrier-trapping lifetime. Several amorphous selenium alloy films are irradiated under X-ray. The composition of films are a-Se: 0.3% As: 5ppm Cl and the thickness of the films are about 150 μm. Different dose rates, which range from 0.2 Gy/s up to 2 Gy/s, are applied during the irradiation. The experiments are done for both electrons and holes. The dose rate difference does not result in a significant change in the X-ray induced carrier-trapping lifetime decrease. The same set of samples is studied under three different temperatures, 10 ℃, 23.5 ℃ and 35.5 ℃. The X-ray induced hole-trapping lifetime changes at different temperatures are investigated. After irradiation, the hole-trapping lifetime begins to recovery gradually. The temperature during the relaxation process remains unchanged. The change of hole-trapping lifetime is measured by IFTOF measurement. At higher temperature, upon receiving a certain amount of X-ray dose, the hole-trapping lifetime decreases more than it at lower temperature; however, it also recoveries more quickly at higher temperature. The relaxation process at different temperature also gives activation energy for holes. The X-ray irradiation does not result in any capacitance changes for a-Se films.","abstract_html":"Amorphous selenium and its alloy are important materials for flat panel digital X-ray detectors. The performance of the X-ray detector is directly related to the carrier mobility and carrier-trapping lifetime of amorphous selenium and its alloy. An experiment was conducted to examine the dose rate effects on the carrier-trapping lifetime reduction of amorphous selenium alloy due to X-ray irradiation. In addition, an experiment was conducted to investigate the temperature effects on X-ray induced carrier-trapping lifetime decrease and relaxation process. X-ray induced capacitance changes have been investigated as well. The interrupted field time of flight (IFTOF) techniques are used in order to acquire the carrier-trapping lifetime. Several amorphous selenium alloy films are irradiated under X-ray. The composition of films are a-Se: 0.3% As: 5ppm Cl and the thickness of the films are about 150 μm. Different dose rates, which range from 0.2 Gy/s up to 2 Gy/s, are applied during the irradiation. The experiments are done for both electrons and holes. The dose rate difference does not result in a significant change in the X-ray induced carrier-trapping lifetime decrease. The same set of samples is studied under three different temperatures, 10 ℃, 23.5 ℃ and 35.5 ℃. The X-ray induced hole-trapping lifetime changes at different temperatures are investigated. After irradiation, the hole-trapping lifetime begins to recovery gradually. The temperature during the relaxation process remains unchanged. The change of hole-trapping lifetime is measured by IFTOF measurement. At higher temperature, upon receiving a certain amount of X-ray dose, the hole-trapping lifetime decreases more than it at lower temperature; however, it also recoveries more quickly at higher temperature. The relaxation process at different temperature also gives activation energy for holes. The X-ray irradiation does not result in any capacitance changes for a-Se films.","abstract_has_math":false,"creators":["Yang, Junyi"],"institution":"University of Saskatchewan","degree_name":"Master of Science (M.Sc.)","degree_level":"Masters","degree_discipline":"Biomedical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":["Kasap, Safa O","Bradley, Michael P","Bui, Francis M","Chen, Li","Yang, Qiaoqin"],"year":2016,"date_issued":"2016-07-07","date_published":"2016-07-07","updated_at":"2026-07-24T04:27:11Z","subjects":["Amorphous Selenium","X-ray"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/10388/7331","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Kasap, Safa O","Bradley, Michael P","Bui, Francis M","Chen, Li","Yang, Qiaoqin"]},{"key":"dc:creator","label":"Author","values":["Yang, Junyi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2016-07-07T20:36:25Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2017-11-27T16:31:59Z"]},{"key":"dc:date.issued","label":"Date","values":["2016-07-07"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Biomedical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science (M.Sc.)"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Saskatchewan"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Amorphous Selenium","X-ray"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10388/7331"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Amorphous selenium and its alloy are important materials for flat panel digital X-ray detectors. The performance of the X-ray detector is directly related to the carrier mobility and carrier-trapping lifetime of amorphous selenium and its alloy. An experiment was conducted to examine the dose rate effects on the carrier-trapping lifetime reduction of amorphous selenium alloy due to X-ray irradiation. In addition, an experiment was conducted to investigate the temperature effects on X-ray induced carrier-trapping lifetime decrease and relaxation process. X-ray induced capacitance changes have been investigated as well. The interrupted field time of flight (IFTOF) techniques are used in order to acquire the carrier-trapping lifetime. Several amorphous selenium alloy films are irradiated under X-ray. The composition of films are a-Se: 0.3% As: 5ppm Cl and the thickness of the films are about 150 μm. Different dose rates, which range from 0.2 Gy/s up to 2 Gy/s, are applied during the irradiation. The experiments are done for both electrons and holes. The dose rate difference does not result in a significant change in the X-ray induced carrier-trapping lifetime decrease. The same set of samples is studied under three different temperatures, 10 ℃, 23.5 ℃ and 35.5 ℃. The X-ray induced hole-trapping lifetime changes at different temperatures are investigated. After irradiation, the hole-trapping lifetime begins to recovery gradually. The temperature during the relaxation process remains unchanged. The change of hole-trapping lifetime is measured by IFTOF measurement. At higher temperature, upon receiving a certain amount of X-ray dose, the hole-trapping lifetime decreases more than it at lower temperature; however, it also recoveries more quickly at higher temperature. The relaxation process at different temperature also gives activation energy for holes. The X-ray irradiation does not result in any capacitance changes for a-Se films."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["X-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors"]}]}],"canonical_facts":{"dc:contributor.committeemember":["Kasap, Safa O","Bradley, Michael P","Bui, Francis M","Chen, Li","Yang, Qiaoqin"],"dc:creator":["Yang, Junyi"],"dc:date.accessioned":["2016-07-07T20:36:25Z"],"dc:date.available":["2017-11-27T16:31:59Z"],"dc:date.issued":["2016-07-07"],"dc:description.abstract":["Amorphous selenium and its alloy are important materials for flat panel digital X-ray detectors. The performance of the X-ray detector is directly related to the carrier mobility and carrier-trapping lifetime of amorphous selenium and its alloy. An experiment was conducted to examine the dose rate effects on the carrier-trapping lifetime reduction of amorphous selenium alloy due to X-ray irradiation. In addition, an experiment was conducted to investigate the temperature effects on X-ray induced carrier-trapping lifetime decrease and relaxation process. X-ray induced capacitance changes have been investigated as well. The interrupted field time of flight (IFTOF) techniques are used in order to acquire the carrier-trapping lifetime. Several amorphous selenium alloy films are irradiated under X-ray. The composition of films are a-Se: 0.3% As: 5ppm Cl and the thickness of the films are about 150 μm. Different dose rates, which range from 0.2 Gy/s up to 2 Gy/s, are applied during the irradiation. The experiments are done for both electrons and holes. The dose rate difference does not result in a significant change in the X-ray induced carrier-trapping lifetime decrease. The same set of samples is studied under three different temperatures, 10 ℃, 23.5 ℃ and 35.5 ℃. The X-ray induced hole-trapping lifetime changes at different temperatures are investigated. After irradiation, the hole-trapping lifetime begins to recovery gradually. The temperature during the relaxation process remains unchanged. The change of hole-trapping lifetime is measured by IFTOF measurement. At higher temperature, upon receiving a certain amount of X-ray dose, the hole-trapping lifetime decreases more than it at lower temperature; however, it also recoveries more quickly at higher temperature. The relaxation process at different temperature also gives activation energy for holes. The X-ray irradiation does not result in any capacitance changes for a-Se films."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["https://hdl.handle.net/10388/7331"],"dc:subject":["Amorphous Selenium","X-ray"],"dc:title":["X-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors"],"dc:type":["Thesis"],"thesis:degree_discipline":["Biomedical Engineering"],"thesis:degree_level":["Masters"],"thesis:degree_name":["Master of Science (M.Sc.)"],"thesis:institution_name":["University of Saskatchewan"]},"updated_at":"2026-07-24T04:27:11Z"}