A STUDY OF SWITCHING PHENOMENA IN DISCONTINUOUS AU AND TI FILMS

In recent years, a large number of materials have been reported to exhibit memory and threshold switching properties. Presently, researchers are concentrating on the amorphous semiconductors. However, switching properties have been reported in discontinuous thin metal films, and this thesis reports on results for discontinuous gold and discontinuous titanium. Due to apparent similarities in the operation of amorphous semiconductor devices and discontinuous metal devices, some of the more widely accepted switching theories for amorphous devices are briefly discussed with the intent of providing a comprehensive background to the model for discontinuous devices to be presented in this thesis. Experimental investigations into the switching properties of discontinuous gold devices, revealed two previously unreported switching phenomena: memory switching and double threshold memory switching. Since it was not possible to apply switching theory from amorphous devices, a qualitative theory is presented to explain both memory switching and double threshold memory switching, which is supported experimentally.

Name thesis:degree_name

Master of Science (M.Sc.)

Level thesis:degree_level

Masters

Grantor

University of Saskatchewan

Year dc:date.issued

1976

Author dc:creator

• Dick, Gordon David

Advisor dc:contributor.advisor

• Dey, S. K.

Handle dc:identifier.uri

https://hdl.handle.net/10388/16021

OAI identifier oai:identifier

oai:harvest.usask.ca:10388/16021