A theoretical study of some transport processes in semiconductors

The problems discussed range from the scattering of electrons byimpurity potentials to the propagation of electromagnetic waves in anon-active plasma.In particular the theory of dipole scattering in semiconductors isconsidered in some detail. The earlier part of text contains a discussionof the validity of the usual Brooks-Herring approximation to the electronpotential energy. The conclusion, that the latter approximation can bequite poor for some values of the parameters of the problem is more clearlydemonstrated than in any previous formulations.Ilany-valley dipole scattering is discussed and it is shown that themaximum anisotropy parameter at high electron energies is less than thecorresponding value for point-ions.The foregoing work is then followed up by a general partial-wave theoryof elastic scattering, by non-spherically-syiametric potentials. Thesetechniques are subsequently applied to the problem of aligned cylindrically(dipole) symmetric potentials.Finally, the emphasis changes and the problem of helicon propagationin a non-active plasma is solved. The helicons are allowed to propagatein a metal-semiconductor sandwich structure and, as anticipated, it is shownthat the familiar parabolic frequency-wave-number relationship breaks up intobands of allowed and forbidden frequency ranges.

Level dc:type.qualificationlevel

Doctoral (Level 8)

Year dc:date.issued

1968

Author dc:creator

• Boardman, AD

Language dc:language

en

Identifier

oai:salford-repository.worktribe.com:1339211

OAI identifier oai:identifier

oai:salford-repository.worktribe.com:1339211