Radiation damage in copper indium diselenide

A study of radiation damage in copper indium diselenide (CIS) is presented. Thebuild up of extended defects and the conditions for amorphisation have beenexplored. In particular, dislocation loops have been characterised and theinfluence of composition and temperature on amorphisation has been investigated.In situ and ex situ transmission electron microscopy (TEM) have been used toexamine the effects on CIS of irradiation with 400 keV xenon ions at both ambientand cryogenic temperatures. Significant portions of the reciprocal lattice of CIShave been recorded using electron diffraction and these are presented alongsidecomputational results. The zone-axis pattern maps produced in this way havebeen employed in the TEM analysis of dislocation loops which were found to formas a result of irradiation at room temperature.To facilitate this work, CIS bulk-material containing macroscopic single-crystalshas been produced using the Bridgman growth technique. Both grown andsupplied CIS have been characterised using methods including: electron dispersivex-ray spectroscopy to determine composition; x-ray powder diffraction to verifycrystallinity; and hot-probe carrier analysis to identify conductivity type.CIS is a candidate for high-efficiency radiation-hard solar cells for use inextraterrestrial environments. Whilst the ability of CIS-based photovoltaic devicesto withstand radiation has been clearly demonstrated in the laboratory and onorbit, the underlying mechanisms by which it achieves this resistance are unclear.This thesis attempts to explain these properties of CIS and to give insight into themeans by which they arise.

Level dc:type.qualificationlevel

Doctoral (Level 8)

Year dc:date.issued

2007

Author dc:creator

• Hinks, JA

Language dc:language

en

Identifier

oai:salford-repository.worktribe.com:1337114

OAI identifier oai:identifier

oai:salford-repository.worktribe.com:1337114