Nanodispositivos de GaN para generación de señales de THz. Simulación Monte Carlo y análisis experimental
type: CreativeWork
description: [EN] OBJECTIVES The overall aim of this PhD Thesis is the numerical analysis (through simulation Monte Carlo, MC) and experimental (fabrication and characterization) of GaN-based nanodevices able to generate signals in the THz band. First, and by means of MC simulations, is to analyze the possibility of very high frequency oscillations by OPTTR in n + nn + diodes of GaN. It will investigate the conditions under which this phenomenon occurs and the influence of multiple parameters in achieving these oscillations, their frequency, amplitude and spectral purity. Second, in the scenario that provides excellent participation in a European project such as ROOTHz be studied intensively GaN SSDs for obtaining THz signals at room temperature by Gunn oscillations. Collaboration with other experimental groups, in this particular case the IEMN of Lille (France), will make it possible in this area, as well as MC simulations us dispose of fabrication and characterization of the devices studied, which should enable us to refine the models and contribute to the optimal design of SSDs to work as THz emitters. METHODOLOGY AND EXPERIMENTAL DESIGN The main tool used for the study that will take place in this thesis is the MC simulation of electronic devices based on a code entirely developed by the Research Group Semiconductor Devices, University of Salamanca. The first task of this work has been the adaptation of such a code in order to approach the study of GaN devices under this project. Although most of the results come from MC simulations, we also note that the result of collaboration with IEMN will present information on the fabrication and characterization of SSDs CONCLUSIONS OPTTR in n + nn + diodes of GaN When the operating temperature T is sufficiently low that the most likely mechanism of scattering in the network is the polar optical phonon emission, the dynamics of the electron transport through the active region of the diode consists of free flight of length l0, accelerat…
abstract: [EN] OBJECTIVES The overall aim of this PhD Thesis is the numerical analysis (through simulation Monte Carlo, MC) and experimental (fabrication and characterization) of GaN-based nanodevices able to generate signals in the THz band. First, and by means of MC simulations, is to analyze the possibility of very high frequency oscillations by OPTTR in n + nn + diodes of GaN. It will investigate the conditions under which this phenomenon occurs and the influence of multiple parameters in achieving these oscillations, their frequency, amplitude and spectral purity. Second, in the scenario that provides excellent participation in a European project such as ROOTHz be studied intensively GaN SSDs for obtaining THz signals at room temperature by Gunn oscillations. Collaboration with other experimental groups, in this particular case the IEMN of Lille (France), will make it possible in this area, as well as MC simulations us dispose of fabrication and characterization of the devices studied, which should enable us to refine the models and contribute to the optimal design of SSDs to work as THz emitters. METHODOLOGY AND EXPERIMENTAL DESIGN The main tool used for the study that will take place in this thesis is the MC simulation of electronic devices based on a code entirely developed by the Research Group Semiconductor Devices, University of Salamanca. The first task of this work has been the adaptation of such a code in order to approach the study of GaN devices under this project. Although most of the results come from MC simulations, we also note that the result of collaboration with IEMN will present information on the fabrication and characterization of SSDs CONCLUSIONS OPTTR in n + nn + diodes of GaN When the operating temperature T is sufficiently low that the most likely mechanism of scattering in the network is the polar optical phonon emission, the dynamics of the electron transport through the active region of the diode consists of free flight of length l0, accelerat…
author: Íñiguez de la Torre, Ana
keywords: Academic dissertations, Semiconductors, Diodes, Semiconductor, Microelectronics, Monte Carlo method, GaN, Tesis y disertaciones académicas, Universidad de Salamanca (España), Tesis Doctoral, Semiconductores, Diodos semiconductores, Microelectrónica, Monte-Carlo, Método de, Nitruro de galio
date published: 2012
date modified: 2026-07-27T21:01:13Z
provider: Universidad de Salamanca
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Universidad de Salamanca

PropertyValue
property ID: DOI
value: 10.14201/gredos.121375