{"id":{"repo_id":"rowan","oai_identifier":"oai:rdw.rowan.edu:etd-1369"},"canonical_url":"https://search.dev.ndltd.org/etd/rowan/oai:rdw.rowan.edu:etd-1369","repository":{"repo_id":"rowan","name":"Rowan University","base_url":"https://rdw.rowan.edu/do/oai/"},"display":{"title":"Hydrogen silsesquioxane (HSQ) for use in nano imprint lithography","abstract":"Innovations are being researched, using materials science, in the areas of sub- 100nm feature production. Current methods such as electron beam lithography (EBL), Extreme Ultra-Violet Lithography (EUV), and Nano-imprint lithography (NIL) are currently being studied to deliver a high throughput, low-cost process, and high field size for nano-lithography. EBL is a technique which can generate very small features (sub-10nm) but is a serial process which has undesirable time constraints. EUV is the latest generation of photo-lithography which can produce 35nm features, but has a limited area of exposure. NIL is a high resolution high throughput process, but still has time constraints with imprinter fabrication and pattern predictability. Important aspects of NIL are the creation of imprinters and the anti-adhesive layers used to protect the imprinters. Hydrogen silsesquioxane (HSQ) is a spin on dielectric with properties of a negative e-beam resist which can generate a SiO2 like material. This can then be used as an imprinter for NIL work with significant process advantages over the standard technique for fabricating imprinters. HSQ has been observed to also have a time dependency factor during the electron beam process. For NIL to work effectively anti-stick layers are needed to ensure the correct designs are imprinted. Anti-stick layers such as F13, and Nanonex create a monolayer of atoms designed to reduce the effects of surface bonding on the nano-scale.","abstract_html":"Innovations are being researched, using materials science, in the areas of sub- 100nm feature production. Current methods such as electron beam lithography (EBL), Extreme Ultra-Violet Lithography (EUV), and Nano-imprint lithography (NIL) are currently being studied to deliver a high throughput, low-cost process, and high field size for nano-lithography. EBL is a technique which can generate very small features (sub-10nm) but is a serial process which has undesirable time constraints. EUV is the latest generation of photo-lithography which can produce 35nm features, but has a limited area of exposure. NIL is a high resolution high throughput process, but still has time constraints with imprinter fabrication and pattern predictability. Important aspects of NIL are the creation of imprinters and the anti-adhesive layers used to protect the imprinters. Hydrogen silsesquioxane (HSQ) is a spin on dielectric with properties of a negative e-beam resist which can generate a SiO2 like material. This can then be used as an imprinter for NIL work with significant process advantages over the standard technique for fabricating imprinters. HSQ has been observed to also have a time dependency factor during the electron beam process. For NIL to work effectively anti-stick layers are needed to ensure the correct designs are imprinted. Anti-stick layers such as F13, and Nanonex create a monolayer of atoms designed to reduce the effects of surface bonding on the nano-scale.","abstract_has_math":false,"creators":["Clark, Nathaniel"],"institution":null,"degree_name":"M.S. Engineering","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Krchnavek, Robert"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-01-23T08:00:00Z","date_published":"2012-01-23T08:00:00Z","updated_at":"2026-07-24T04:13:09Z","subjects":["Nanoimprint lithography","Electrical and Computer Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://rdw.rowan.edu/etd/370","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Krchnavek, Robert"]},{"key":"dc:creator","label":"Author","values":["Clark, Nathaniel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2020-03-03T19:59:03Z"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S. Engineering"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Nanoimprint lithography","Electrical and Computer Engineering"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://rdw.rowan.edu/etd/370"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Innovations are being researched, using materials science, in the areas of sub- 100nm feature production. Current methods such as electron beam lithography (EBL), Extreme Ultra-Violet Lithography (EUV), and Nano-imprint lithography (NIL) are currently being studied to deliver a high throughput, low-cost process, and high field size for nano-lithography. EBL is a technique which can generate very small features (sub-10nm) but is a serial process which has undesirable time constraints. EUV is the latest generation of photo-lithography which can produce 35nm features, but has a limited area of exposure. NIL is a high resolution high throughput process, but still has time constraints with imprinter fabrication and pattern predictability. Important aspects of NIL are the creation of imprinters and the anti-adhesive layers used to protect the imprinters. Hydrogen silsesquioxane (HSQ) is a spin on dielectric with properties of a negative e-beam resist which can generate a SiO2 like material. This can then be used as an imprinter for NIL work with significant process advantages over the standard technique for fabricating imprinters. HSQ has been observed to also have a time dependency factor during the electron beam process. For NIL to work effectively anti-stick layers are needed to ensure the correct designs are imprinted. Anti-stick layers such as F13, and Nanonex create a monolayer of atoms designed to reduce the effects of surface bonding on the nano-scale."]},{"key":"dc:title","label":"Title","values":["Hydrogen silsesquioxane (HSQ) for use in nano imprint lithography"]}]}],"canonical_facts":{"dc:contributor":["Krchnavek, Robert"],"dc:creator":["Clark, Nathaniel"],"dc:date.available":["2020-03-03T19:59:03Z"],"dc:description.abstract":["Innovations are being researched, using materials science, in the areas of sub- 100nm feature production. Current methods such as electron beam lithography (EBL), Extreme Ultra-Violet Lithography (EUV), and Nano-imprint lithography (NIL) are currently being studied to deliver a high throughput, low-cost process, and high field size for nano-lithography. EBL is a technique which can generate very small features (sub-10nm) but is a serial process which has undesirable time constraints. EUV is the latest generation of photo-lithography which can produce 35nm features, but has a limited area of exposure. NIL is a high resolution high throughput process, but still has time constraints with imprinter fabrication and pattern predictability. Important aspects of NIL are the creation of imprinters and the anti-adhesive layers used to protect the imprinters. Hydrogen silsesquioxane (HSQ) is a spin on dielectric with properties of a negative e-beam resist which can generate a SiO2 like material. This can then be used as an imprinter for NIL work with significant process advantages over the standard technique for fabricating imprinters. HSQ has been observed to also have a time dependency factor during the electron beam process. For NIL to work effectively anti-stick layers are needed to ensure the correct designs are imprinted. Anti-stick layers such as F13, and Nanonex create a monolayer of atoms designed to reduce the effects of surface bonding on the nano-scale."],"dc:identifier":["https://rdw.rowan.edu/etd/370"],"dc:subject":["Nanoimprint lithography","Electrical and Computer Engineering"],"dc:title":["Hydrogen silsesquioxane (HSQ) for use in nano imprint lithography"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S. Engineering"]},"updated_at":"2026-07-24T04:13:09Z"}