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Rochester Institute of Technology

Wide bandgap semiconductors for harsh environment imaging: temperature dependence of p-n junction detector efficiency

Degree

thesis:*
Name thesis:degree_name
Imaging Science (MS)
Level thesis:degree_level
Thesis

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Merritt, Danielle
Contributors dc:contributor
  • Ryne Raffaelle

Identifiers

dc:identifier.*
Repository record dc:identifier
https://repository.rit.edu/theses/7776
OAI identifier oai:identifier
oai:repository.rit.edu:theses-8781

Chain of custody

source
Harvested from
Rochester Institute of Technology
Base URL
repository.rit.edu/do/oai/
Last updated
2026-07-27
Source record
OAI-PMH GetRecord
related terms
citation

Merritt, Danielle. Wide bandgap semiconductors for harsh environment imaging: temperature dependence of p-n junction detector efficiency. Thesis thesis, https://repository.rit.edu/theses/7776