Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current

Bohannon, Eric

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Rochester Institute of Technology

Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current

dc:creator Bohannon, Eric

thesis:degree_name Microsystems Engineering (Ph.D.)

Degree

thesis:*

Name thesis:degree_name: Microsystems Engineering (Ph.D.)
Level thesis:degree_level: Dissertation

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Bohannon, Eric
Contributors dc:contributor: Mukund, P.R.

Subjects

dc:subject × 6

Identifiers

dc:identifier.*

Repository record dc:identifier: https://repository.rit.edu/theses/12
OAI identifier oai:identifier: oai:repository.rit.edu:theses-1018

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Harvested from: Rochester Institute of Technology
Base URL: repository.rit.edu/do/oai/
Last updated: 2026-07-27
Source record: OAI-PMH GetRecord

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citation

Bohannon, Eric. Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current. Dissertation thesis, https://repository.rit.edu/theses/12

Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current

Degree

Author and committee

Subjects

Identifiers

Chain of custody

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