{"id":{"repo_id":"rice","oai_identifier":"oai:repository.rice.edu:1911/17566"},"canonical_url":"https://search.dev.ndltd.org/etd/rice/oai:repository.rice.edu:1911/17566","repository":{"repo_id":"rice","name":"Rice University","base_url":"https://repository.rice.edu/server/oai/request"},"display":{"title":"Processing and characterization of lithium niobate thin films for ferroelectric nonvolatile memory applications","abstract":"Both highly c-axis and randomly-oriented LiNbO3 thin films are grown on p-type Si (111) substrates by RF magnetron sputtering and metallo-organic decomposition (MOD), respectively. Ellipsometry, X-ray diffraction, AFM and SEM are used to analyze the structural quality of the deposited ferroelectric thin films, including thickness, crystallinity, stoichiometry and surface roughness. Metal-ferroelectric-semiconductor structures are fabricated and electrically characterized with polarization vs. electric field (P-E) and capacitance vs. voltage (C-V) measurements. Hysteresis curves based on polarization switching are observed, verifying the ferroelectricity of deposited LiNbO3 thin films. Comparison of different film growth mechanisms between these two deposition methods is made, and their effects on physical and electrical characteristics of the derived LiNbO3 thin films are discussed. RF magnetron sputtering is proved to be a more promising thin-film growth technique than MOD for ferroelectric nonvolatile memory applications.","abstract_html":"Both highly c-axis and randomly-oriented LiNbO3 thin films are grown on p-type Si (111) substrates by RF magnetron sputtering and metallo-organic decomposition (MOD), respectively. Ellipsometry, X-ray diffraction, AFM and SEM are used to analyze the structural quality of the deposited ferroelectric thin films, including thickness, crystallinity, stoichiometry and surface roughness. Metal-ferroelectric-semiconductor structures are fabricated and electrically characterized with polarization vs. electric field (P-E) and capacitance vs. voltage (C-V) measurements. Hysteresis curves based on polarization switching are observed, verifying the ferroelectricity of deposited LiNbO3 thin films. Comparison of different film growth mechanisms between these two deposition methods is made, and their effects on physical and electrical characteristics of the derived LiNbO3 thin films are discussed. RF magnetron sputtering is proved to be a more promising thin-film growth technique than MOD for ferroelectric nonvolatile memory applications.","abstract_has_math":false,"creators":["Zhu, Jie"],"institution":"Rice University","degree_name":"Master of Science","degree_level":"Masters","degree_discipline":"Engineering","degree_department":null,"school":null,"contributors":[],"advisors":["Rabson, Thomas A."],"committee_chairs":[],"committee_members":[],"year":2002,"date_issued":"2002","date_published":"2002","updated_at":"2026-07-24T04:10:32Z","subjects":["Electronics","Electrical engineering"],"languages":["eng"],"rights":["Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/1911/17566","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Rabson, Thomas A."]},{"key":"dc:creator","label":"Author","values":["Zhu, Jie"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2009-06-04T06:23:31Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2009-06-04T06:23:31Z"]},{"key":"dc:date.issued","label":"Date","values":["2002"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Rice University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electronics","Electrical engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1911/17566"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Both highly c-axis and randomly-oriented LiNbO3 thin films are grown on p-type Si (111) substrates by RF magnetron sputtering and metallo-organic decomposition (MOD), respectively. Ellipsometry, X-ray diffraction, AFM and SEM are used to analyze the structural quality of the deposited ferroelectric thin films, including thickness, crystallinity, stoichiometry and surface roughness. Metal-ferroelectric-semiconductor structures are fabricated and electrically characterized with polarization vs. electric field (P-E) and capacitance vs. voltage (C-V) measurements. Hysteresis curves based on polarization switching are observed, verifying the ferroelectricity of deposited LiNbO3 thin films. Comparison of different film growth mechanisms between these two deposition methods is made, and their effects on physical and electrical characteristics of the derived LiNbO3 thin films are discussed. RF magnetron sputtering is proved to be a more promising thin-film growth technique than MOD for ferroelectric nonvolatile memory applications."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Processing and characterization of lithium niobate thin films for ferroelectric nonvolatile memory applications"]}]}],"canonical_facts":{"dc:contributor.advisor":["Rabson, Thomas A."],"dc:creator":["Zhu, Jie"],"dc:date.accessioned":["2009-06-04T06:23:31Z"],"dc:date.available":["2009-06-04T06:23:31Z"],"dc:date.issued":["2002"],"dc:description.abstract":["Both highly c-axis and randomly-oriented LiNbO3 thin films are grown on p-type Si (111) substrates by RF magnetron sputtering and metallo-organic decomposition (MOD), respectively. Ellipsometry, X-ray diffraction, AFM and SEM are used to analyze the structural quality of the deposited ferroelectric thin films, including thickness, crystallinity, stoichiometry and surface roughness. Metal-ferroelectric-semiconductor structures are fabricated and electrically characterized with polarization vs. electric field (P-E) and capacitance vs. voltage (C-V) measurements. Hysteresis curves based on polarization switching are observed, verifying the ferroelectricity of deposited LiNbO3 thin films. Comparison of different film growth mechanisms between these two deposition methods is made, and their effects on physical and electrical characteristics of the derived LiNbO3 thin films are discussed. RF magnetron sputtering is proved to be a more promising thin-film growth technique than MOD for ferroelectric nonvolatile memory applications."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["https://hdl.handle.net/1911/17566"],"dc:language.iso":["eng"],"dc:rights":["Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder."],"dc:subject":["Electronics","Electrical engineering"],"dc:title":["Processing and characterization of lithium niobate thin films for ferroelectric nonvolatile memory applications"],"dc:type":["Thesis"],"thesis:degree_discipline":["Engineering"],"thesis:degree_level":["Masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Rice University"]},"updated_at":"2026-07-24T04:10:32Z"}