Rice University
Analysis of Memristor Hysteretic Systems: A Hybrid Coupled Model with emphasis on Pinching/Degrading Behavior
Abstract
dc:description.abstractThis thesis proposes a novel model that accurately captures the asymmetric hysteretic behavior of memristive devices exhibiting self-crossing hysteresis loops. The proposed model combines the Bouc-Wen Baber-Noori model with other non-linear elements in the resistive switching process. Existing models for memristive behavior, including physical-based memristive models, phenomenological-based models, and models that employ stochastic techniques, are reviewed. The Bouc-Wen model is significant for predicting the current-voltage outputs within memristors, and a new phenomenological model is presented that incorporates the modified Bouc-Wen-Baber-Noori model, a nonlinear geometric-based equation, and bilinear optimization to predict the response of a memristive system. The potency of the proposed model is demonstrated by a dynamic simulation of a memristor system in relation to an integrated circuit system. The proposed model provides reliable predictions of the hysteretic behavior of memristive devices, enabling their efficient use in future computing applications. The thesis provides insights into the development of accurate and efficient models for the hysteretic behavior of memristive devices, which will facilitate their widespread use in various engineering applications.
Degree
thesis:*- Name thesis:degree_name
- Master of Science
- Level thesis:degree_level
- Masters
- Discipline thesis:degree_discipline
- Engineering
- Grantor
- Rice University
- Year dc:date.issued
- 2023
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Palm, Elijah Okoe
- Advisor dc:contributor.advisor
-
- Spanos, Pol
Subjects
dc:subject × 44- Memristor
- Hysteresis
- Bouc-Wen
- Bouc-Wen-Baber-Noori
- Current
- Voltage
- Phenomenological models
- physics-based
- Resistive Random Access Memory
- Pinched hysteresis
- bipolar switching
- asymmetric and symmetric hysteresis
- global optimization
- piecewise adaptation
- input voltage
- current-controlled
- nueromorphic technologies
- neural networks
- conductive filament
- ion transport barrier
- local joule heating
- ion transport
- diffusion
- Linear Ion Drift Model
- Non-linear Ion Drift Model
- state variable
- strength degradation
- stiffness degradation
- hysteric displacement
- reinforced concrete structures
- Tuned-Mass Damper
- vibrations
- genetic algorithm
- Pattern-Search
- bilinear optimization
- filament disruption
- parameter identification
- bipolar triangular waveform
- voltage-controlled
- ON-State
- OFF State
- High Resistive State
- Low Resistive State
- Inverse Memristor Frequency Characteristics
Rights
dc:rights- Statement dc:rights
-
- Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- https://hdl.handle.net/1911/115148
- OAI identifier oai:identifier
- oai:repository.rice.edu:1911/115148