Semiconducting properties of the passive films on copper

The semiconducting properties of the passive films on copper have been investigated through capacitance, photoresponse and kinetic measurements. Mott-Schottky plots show that the passive films on copper are p-type semiconductors. The metal deficits form the electron acceptors, which give rise to p-type conductivity. The passive films show photovoltages under illumination. The band gaps of the anodic films and thermal oxides are similar to that of CuO (1.7 eV). The band gap of the film formed in CuSOi+ is close to that of Q12O (2.2 eV). The electron transfer between the passive electrodes and the redox couple shows diffusion controlled kinetics. The large exchange current is explained in terms of the formation of an accumulation layer in the valence band.

Name thesis:degree_name

Master of Arts

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Natural Sciences

Grantor

Rice University

Year dc:date.issued

1980

Author dc:creator

• Tanizawa, Yoshiaki

Advisor dc:contributor.advisor

• Hackerman, Norman

Committee members dc:contributor.committeemember

• Margrave, John L.
• McLellan, Rex B.

Statement dc:rights

• Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1911/104283

OAI identifier oai:identifier

oai:repository.rice.edu:1911/104283