Back to results

S.l. : s.n.

Experimental and numerical aspects of GaN growth by HVPE

dc:creator Dam, C.E.C.

dc:date2006

Abstract

dc:description

Contains fulltext : 29812.pdf (Publisher’s version ) (Open Access)

Degree

thesis:*

Grantor dc:publisher: S.l. : s.n.
Year dc:date: 2006

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Dam, C.E.C.
Contributors dc:contributor: Larsen, P.K.
Hageman, P.R.

Subjects

dc:subject × 1

Applied Materials Science

Identifiers

dc:identifier.*

Identifier: 9090209123
OAI identifier oai:identifier: oai:repository.ubn.ru.nl:2066/29812

Chain of custody

source

Harvested from: Radboud University Nijmegen
Base URL: repository.ubn.ru.nl/oai/request
Last updated: 2026-07-24
Source record: OAI-PMH GetRecord

related terms

citation

Dam, C.E.C.. Experimental and numerical aspects of GaN growth by HVPE. S.l. : s.n., 2006. http://hdl.handle.net/2066/29812

More from Radboud University Nijmegen