{"id":{"repo_id":"qucosa-diss","oai_identifier":"oai:qucosa:de:qucosa:33969"},"canonical_url":"https://search.dev.ndltd.org/etd/qucosa-diss/oai:qucosa:de:qucosa:33969","repository":{"repo_id":"qucosa-diss","name":"QUCOSA","base_url":"http://www.qucosa.de/oai/"},"display":{"title":"Characterization of Novel Pyroelectrics","abstract":"The change of the spontaneous polarization due to a change of temperature is known as the pyroelectric effect and is restricted to crystalline, non-centrosymmetric and polar matter. Its main application is the utilization in infrared radiation sensors, but usage for waste heat energy harvesting or chemical catalysis is also possible. A precise quantification, i.e. the measurement of the pyroelectric coefficient p, is inevitable to assess the performance of a material. Hence, a comprehensive overview is provided in this work, which summarizes and evaluates the available techniques to characterize p. A setup allowing the fully automated measurement of p by utilizing the Sharp-Garn method and the measurement of ferroelectric hysteresis loops is described. It was used to characterize and discuss the behavior of p with respect to the temperature of the doped bulk III-V compound semiconductors gallium nitride and aluminum nitride and thin films of doped hafnium oxide, as reliable data for these materials is still missing in the literature. Here, the nitride-based semiconductors show a comparable small p and temperature dependency, which is only slightly affected by the incorporated dopant, compared to traditional ferroelectric oxides. In contrast, p of HfO2 thin films is about an order of magnitude larger and seems to be affected by the present dopant and its concentrations, as it is considered to be responsible for the formation of the polar orthorhombic phase.","abstract_html":"The change of the spontaneous polarization due to a change of temperature is known as the pyroelectric effect and is restricted to crystalline, non-centrosymmetric and polar matter. Its main application is the utilization in infrared radiation sensors, but usage for waste heat energy harvesting or chemical catalysis is also possible. A precise quantification, i.e. the measurement of the pyroelectric coefficient p, is inevitable to assess the performance of a material. Hence, a comprehensive overview is provided in this work, which summarizes and evaluates the available techniques to characterize p. A setup allowing the fully automated measurement of p by utilizing the Sharp-Garn method and the measurement of ferroelectric hysteresis loops is described. It was used to characterize and discuss the behavior of p with respect to the temperature of the doped bulk III-V compound semiconductors gallium nitride and aluminum nitride and thin films of doped hafnium oxide, as reliable data for these materials is still missing in the literature. Here, the nitride-based semiconductors show a comparable small p and temperature dependency, which is only slightly affected by the incorporated dopant, compared to traditional ferroelectric oxides. In contrast, p of HfO2 thin films is about an order of magnitude larger and seems to be affected by the present dopant and its concentrations, as it is considered to be responsible for the formation of the polar orthorhombic phase.","abstract_has_math":false,"creators":["Jachalke, Sven"],"institution":"TU Bergakademie Freiberg","degree_name":null,"degree_level":"thesis.doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":["Meyer, Dirk C.","Mikolajick, Thomas"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2019,"date_issued":"2019-05-06","date_published":"2019-05-06","updated_at":"2026-07-24T03:56:21Z","subjects":["Pyroelektrizität","Ferroelektrizität","III-V-Verbindungshalbleiter","Galliumnitrid","Hafniumoxid","Sharp-Garn-Methode","pyroelectrics","ferroelectrics","III-V compound semiconductors","gallium nitride","hafnium oxide","Sharp-Garn method"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Meyer, Dirk C.","Mikolajick, Thomas"]},{"key":"dc:creator","label":"Author","values":["Jachalke, Sven"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["Technische Universität Bergakademie Freiberg"]},{"key":"dc:type","label":"Dc Type","values":["doctoralThesis"]},{"key":"thesis:degree_level","label":"Degree Level","values":["thesis.doctoral"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["TU Bergakademie Freiberg"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Pyroelektrizität","Ferroelektrizität","III-V-Verbindungshalbleiter","Galliumnitrid","Hafniumoxid","Sharp-Garn-Methode","pyroelectrics","ferroelectrics","III-V compound semiconductors","gallium nitride","hafnium oxide","Sharp-Garn method"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The change of the spontaneous polarization due to a change of temperature is known as the pyroelectric effect and is restricted to crystalline, non-centrosymmetric and polar matter. Its main application is the utilization in infrared radiation sensors, but usage for waste heat energy harvesting or chemical catalysis is also possible. A precise quantification, i.e. the measurement of the pyroelectric coefficient p, is inevitable to assess the performance of a material. Hence, a comprehensive overview is provided in this work, which summarizes and evaluates the available techniques to characterize p. A setup allowing the fully automated measurement of p by utilizing the Sharp-Garn method and the measurement of ferroelectric hysteresis loops is described. It was used to characterize and discuss the behavior of p with respect to the temperature of the doped bulk III-V compound semiconductors gallium nitride and aluminum nitride and thin films of doped hafnium oxide, as reliable data for these materials is still missing in the literature. Here, the nitride-based semiconductors show a comparable small p and temperature dependency, which is only slightly affected by the incorporated dopant, compared to traditional ferroelectric oxides. In contrast, p of HfO2 thin films is about an order of magnitude larger and seems to be affected by the present dopant and its concentrations, as it is considered to be responsible for the formation of the polar orthorhombic phase.","Die Änderung der spontanen Polarisation durch eine Änderung der Temperatur ist bekannt als der pyroelektrische Effekt, welcher auf kristalline, nicht-zentrosymmetrische und polare Materie beschränkt ist. Er findet vor allem Anwendung in Infrarot-Strahlungsdetektoren, bietet aber weitere Anwendungsfelder wie die Niedertemperatur-Abwärmenutzung oder die chemische Katalyse. Eine präzise Quantifizierung, d. h. die Messung des pyroelektrischen Koeffizienten p, ist unabdingbar, um die Leistungsfähigkeit eines Materials zu bewerten. Daher bietet diese Arbeit u.a. einen umfassenden Überblick und eine Bewertung der verfügbaren Messmethoden zur Charakterisierung von p. Weiterhin wird ein Messaufbau beschrieben, welcher die voll automatisierte Messung von p mit Hilfe der Sharp-Garn Methode und auch die Charakterisierung der ferroelektrischen Hystereseschleife ermöglicht. Aufgrund fehlerender Literaturdaten wurde dieser Aufbau anschließend genutzt, um den temperaturabhängigen pyroelektrischen Koeffizienten der dotierten III-V-Verbindungshalbleiter Gallium- und Aluminiumnitrid sowie dünner Schichten bestehend aus dotiertem Hafniumoxid zu messen und zu diskutieren. Im Vergleich zu klassichen ferroelektrischen Oxiden zeigen dabei die nitridbasierten Halbleiter einen geringen pyroelektrischen Koeffizienten und eine kleine Temperaturabhängigkeit, welche auch nur leicht durch den vorhandenen Dotanden beeinflusst werden kann. Dagegen zeigen dünne Hafniumoxidschichten einen um eine Größenordnung größeren pyroelektrischen Koeffizienten, welcher durch den anwesenden Dotanden und seine Konzentration beeinflusst wird, da dieser verantwortlich für die Ausbildung der polaren, orthorhombischen Phase gemacht wird."]},{"key":"dc:title","label":"Title","values":["Characterization of Novel Pyroelectrics"]}]}],"canonical_facts":{"dc:contributor":["Meyer, Dirk C.","Mikolajick, Thomas"],"dc:creator":["Jachalke, Sven"],"dc:description.abstract":["The change of the spontaneous polarization due to a change of temperature is known as the pyroelectric effect and is restricted to crystalline, non-centrosymmetric and polar matter. Its main application is the utilization in infrared radiation sensors, but usage for waste heat energy harvesting or chemical catalysis is also possible. A precise quantification, i.e. the measurement of the pyroelectric coefficient p, is inevitable to assess the performance of a material. Hence, a comprehensive overview is provided in this work, which summarizes and evaluates the available techniques to characterize p. A setup allowing the fully automated measurement of p by utilizing the Sharp-Garn method and the measurement of ferroelectric hysteresis loops is described. It was used to characterize and discuss the behavior of p with respect to the temperature of the doped bulk III-V compound semiconductors gallium nitride and aluminum nitride and thin films of doped hafnium oxide, as reliable data for these materials is still missing in the literature. Here, the nitride-based semiconductors show a comparable small p and temperature dependency, which is only slightly affected by the incorporated dopant, compared to traditional ferroelectric oxides. In contrast, p of HfO2 thin films is about an order of magnitude larger and seems to be affected by the present dopant and its concentrations, as it is considered to be responsible for the formation of the polar orthorhombic phase.","Die Änderung der spontanen Polarisation durch eine Änderung der Temperatur ist bekannt als der pyroelektrische Effekt, welcher auf kristalline, nicht-zentrosymmetrische und polare Materie beschränkt ist. Er findet vor allem Anwendung in Infrarot-Strahlungsdetektoren, bietet aber weitere Anwendungsfelder wie die Niedertemperatur-Abwärmenutzung oder die chemische Katalyse. Eine präzise Quantifizierung, d. h. die Messung des pyroelektrischen Koeffizienten p, ist unabdingbar, um die Leistungsfähigkeit eines Materials zu bewerten. Daher bietet diese Arbeit u.a. einen umfassenden Überblick und eine Bewertung der verfügbaren Messmethoden zur Charakterisierung von p. Weiterhin wird ein Messaufbau beschrieben, welcher die voll automatisierte Messung von p mit Hilfe der Sharp-Garn Methode und auch die Charakterisierung der ferroelektrischen Hystereseschleife ermöglicht. Aufgrund fehlerender Literaturdaten wurde dieser Aufbau anschließend genutzt, um den temperaturabhängigen pyroelektrischen Koeffizienten der dotierten III-V-Verbindungshalbleiter Gallium- und Aluminiumnitrid sowie dünner Schichten bestehend aus dotiertem Hafniumoxid zu messen und zu diskutieren. Im Vergleich zu klassichen ferroelektrischen Oxiden zeigen dabei die nitridbasierten Halbleiter einen geringen pyroelektrischen Koeffizienten und eine kleine Temperaturabhängigkeit, welche auch nur leicht durch den vorhandenen Dotanden beeinflusst werden kann. Dagegen zeigen dünne Hafniumoxidschichten einen um eine Größenordnung größeren pyroelektrischen Koeffizienten, welcher durch den anwesenden Dotanden und seine Konzentration beeinflusst wird, da dieser verantwortlich für die Ausbildung der polaren, orthorhombischen Phase gemacht wird."],"dc:publisher":["Technische Universität Bergakademie Freiberg"],"dc:subject":["Pyroelektrizität","Ferroelektrizität","III-V-Verbindungshalbleiter","Galliumnitrid","Hafniumoxid","Sharp-Garn-Methode","pyroelectrics","ferroelectrics","III-V compound semiconductors","gallium nitride","hafnium oxide","Sharp-Garn method"],"dc:title":["Characterization of Novel Pyroelectrics"],"dc:type":["doctoralThesis"],"thesis:degree_level":["thesis.doctoral"],"thesis:institution_name":["TU Bergakademie Freiberg"]},"updated_at":"2026-07-24T03:56:21Z"}