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Queen's University Belfast

A multi-process reactor for thin film transistor fabrication at low temperatures

Abstract

dc:description.abstract

Polysilicon Thin Film Transistors (TFT's) have a vast potential in a wide range of applications including, flat panel displays, large area electronics and 3D integrated circuits. This thesis describes advances made in the technology for the fabrication of TFT's. A Multi-Process reactor has been designed to produce device quality layers on Coming 1733 glass substrates, which are incompatible with standard high temperature processing techniques. A variety of processes can be performed sequentially in the system without removal of the substrates from vacuum. This integrated processing ensures good quality interface and film properties.<br/><br/>High quality silicon films have been deposited and characterised. The grain size and the impurity content of the layers have been determined from Atomic Force Microscopy (AFM) imaging techniques and Secondary-Ion Mass Spectroscopy (SIMS). Controlled in-situ doping of poly silicon by phosphorous to produce a conductive layer has also been demonstrated.<br/><br/>By careful control of the process conditions PECVD silicon nitride can be utilised for a dual purpose in TFT applications. A silicon rich film can be used as a passivation layer and prevent the diffusion of impurities from a glass substrate into active device layers. A high quality nitrogen rich film is suitable for use as a gate dielectric in a TFT.<br/><br/>TFT's have been fabricated on oxidised silicon substrates. Devices with a silicon nitride dielectric had comparable characteristics to those with a thermal Si02 dielectric. A number of analytical techniques were investigated for the calculation of trap state density in the active silicon layer. These techniques are useful for evaluating the effect of passivation methods and novel processing steps. A suitable glass substrate for TFT fabrication has been selected and a full low temperature process has been developed. TFT's have successfully been fabricated on glass substrates using this process.<br/>

Degree

thesis:*
Name dc:type.qualificationname
Doctor of Philosophy
Level dc:type.qualificationlevel
Doctoral Thesis
Grantor dc:publisher.institution
Queen's University Belfast
Year dc:date.issued
1995

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Quinn, Liam

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
oai:pure.qub.ac.uk/portal:studenttheses/a262280e-f7bc-4dc3-968b-430a0019db7a
OAI identifier oai:identifier
oai:pure.qub.ac.uk/portal:studenttheses/a262280e-f7bc-4dc3-968b-430a0019db7a

Chain of custody

source
Harvested from
Queen's University Belfast
Base URL
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Last updated
2026-07-24
Source record
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citation

Quinn, Liam. A multi-process reactor for thin film transistor fabrication at low temperatures. Doctoral Thesis thesis, Queen's University Belfast, 1995. https://pure.qub.ac.uk/en/studentTheses/a262280e-f7bc-4dc3-968b-430a0019db7a