{"id":{"repo_id":"purdue-thes","oai_identifier":"oai:docs.lib.purdue.edu:open_access_dissertations-2608"},"canonical_url":"https://search.dev.ndltd.org/etd/purdue-thes/oai:docs.lib.purdue.edu:open_access_dissertations-2608","repository":{"repo_id":"purdue-thes","name":"Purdue University","base_url":"https://docs.lib.purdue.edu/do/oai/"},"display":{"title":"TOWARDS INTEGRATION OF GRAPHENE IN ADVANCED CMOS INTERCONNECT TECHNOLOGY","abstract":"The integration of graphene into existing state-of-the-art semiconductor manufacturing is a topic of worldwide interest. With its unprecedented electrical, thermal and mechanical properties, graphene is ideally suited for back-end of line (BEOL) technology to boost the performance of on-chip copper (Cu) interconnects. However, the lack of BEOL compatible methods has stymied the true evaluation of Cu/graphene hybrid (Cu-G) technology. The objectives of this thesis proposal are to demonstrate BEOL-compatible graphene growth techniques, and explore various avenues for practical integration of graphene in order to achieve better electrical, thermal and reliability metrics than traditional interconnect technology.","abstract_html":"The integration of graphene into existing state-of-the-art semiconductor manufacturing is a topic of worldwide interest. With its unprecedented electrical, thermal and mechanical properties, graphene is ideally suited for back-end of line (BEOL) technology to boost the performance of on-chip copper (Cu) interconnects. However, the lack of BEOL compatible methods has stymied the true evaluation of Cu/graphene hybrid (Cu-G) technology. The objectives of this thesis proposal are to demonstrate BEOL-compatible graphene growth techniques, and explore various avenues for practical integration of graphene in order to achieve better electrical, thermal and reliability metrics than traditional interconnect technology.","abstract_has_math":false,"creators":["Mehta, Ruchit"],"institution":null,"degree_name":"Doctor of Philosophy (PhD)","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Zhihong Chen","David B Janes","Amy M Marconnet","Xiulin Ruan"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-01-01T08:00:00Z","date_published":"2016-01-01T08:00:00Z","updated_at":"2026-07-24T03:54:38Z","subjects":["diffusion barrier","graphene","graphene-copper hybrid","PECVD","thermal management"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://docs.lib.purdue.edu/open_access_dissertations/1392","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Zhihong Chen","David B Janes","Amy M Marconnet","Xiulin Ruan"]},{"key":"dc:creator","label":"Author","values":["Mehta, Ruchit"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Doctor of Philosophy (PhD)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["diffusion barrier","graphene","graphene-copper hybrid","PECVD","thermal management"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://docs.lib.purdue.edu/open_access_dissertations/1392"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The integration of graphene into existing state-of-the-art semiconductor manufacturing is a topic of worldwide interest. With its unprecedented electrical, thermal and mechanical properties, graphene is ideally suited for back-end of line (BEOL) technology to boost the performance of on-chip copper (Cu) interconnects. However, the lack of BEOL compatible methods has stymied the true evaluation of Cu/graphene hybrid (Cu-G) technology. The objectives of this thesis proposal are to demonstrate BEOL-compatible graphene growth techniques, and explore various avenues for practical integration of graphene in order to achieve better electrical, thermal and reliability metrics than traditional interconnect technology."]},{"key":"dc:title","label":"Title","values":["TOWARDS INTEGRATION OF GRAPHENE IN ADVANCED CMOS INTERCONNECT TECHNOLOGY"]}]}],"canonical_facts":{"dc:contributor":["Zhihong Chen","David B Janes","Amy M Marconnet","Xiulin Ruan"],"dc:creator":["Mehta, Ruchit"],"dc:description.abstract":["The integration of graphene into existing state-of-the-art semiconductor manufacturing is a topic of worldwide interest. With its unprecedented electrical, thermal and mechanical properties, graphene is ideally suited for back-end of line (BEOL) technology to boost the performance of on-chip copper (Cu) interconnects. However, the lack of BEOL compatible methods has stymied the true evaluation of Cu/graphene hybrid (Cu-G) technology. The objectives of this thesis proposal are to demonstrate BEOL-compatible graphene growth techniques, and explore various avenues for practical integration of graphene in order to achieve better electrical, thermal and reliability metrics than traditional interconnect technology."],"dc:identifier":["https://docs.lib.purdue.edu/open_access_dissertations/1392"],"dc:subject":["diffusion barrier","graphene","graphene-copper hybrid","PECVD","thermal management"],"dc:title":["TOWARDS INTEGRATION OF GRAPHENE IN ADVANCED CMOS INTERCONNECT TECHNOLOGY"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Doctor of Philosophy (PhD)"]},"updated_at":"2026-07-24T03:54:38Z"}