{"id":{"repo_id":"oldenburg","oai_identifier":"oai:oops.uni-oldenburg.de:213"},"canonical_url":"https://search.dev.ndltd.org/etd/oldenburg/oai:oops.uni-oldenburg.de:213","repository":{"repo_id":"oldenburg","name":"Carl von Ossietzky Universität Oldenburg","base_url":"http://oops.uni-oldenburg.de/cgi/oai2"},"display":{"title":"Defect spectroscopy on Cu(In,Ga)(S,Se) 2 -based heterojunction solar cells: role of the damp-heat treatment","abstract":"The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo are investigated. The fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp-heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subject non-encapsulated test cells to damp-heat exposure at 85C ambient temperature and 85% relative humidity for various time periods (6h-438h). We apply temperature-dependent capacitance-voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observe the presence of electronic defect states which showed an increasing activation energy due to damp-heat exposure. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se)2 surface. We observe changes in the bulk defect spectra due to the damp-heat treatment as well.","abstract_html":"The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo are investigated. The fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp-heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subject non-encapsulated test cells to damp-heat exposure at 85C ambient temperature and 85% relative humidity for various time periods (6h-438h). We apply temperature-dependent capacitance-voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observe the presence of electronic defect states which showed an increasing activation energy due to damp-heat exposure. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se)2 surface. We observe changes in the bulk defect spectra due to the damp-heat treatment as well.","abstract_has_math":false,"creators":["Deibel, Carsten"],"institution":"Universität Oldenburg","degree_name":null,"degree_level":"thesis.doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2002,"date_issued":"2002-12-17","date_published":"2002-12-17","updated_at":"2026-07-27T20:27:18Z","subjects":["[Keine Schlagwörter von Autor/in vergeben.]"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://oops.uni-oldenburg.de/213","outbound_label":"Repository record","outbound_source":"source_url"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Deibel, Carsten"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["BIS der Universität Oldenburg"]},{"key":"dc:type","label":"Dc Type","values":["doctoralThesis"]},{"key":"thesis:degree_level","label":"Degree Level","values":["thesis.doctoral"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Universität Oldenburg"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["[Keine Schlagwörter von Autor/in vergeben.]"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo are investigated. The fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp-heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subject non-encapsulated test cells to damp-heat exposure at 85C ambient temperature and 85% relative humidity for various time periods (6h-438h). We apply temperature-dependent capacitance-voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observe the presence of electronic defect states which showed an increasing activation energy due to damp-heat exposure. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se)2 surface. We observe changes in the bulk defect spectra due to the damp-heat treatment as well.","Die Untersuchung der geänderten Defektcharakteristika, die durch beschleunigte Lebensdauertests von ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Dünnschichtsolarzellen verursacht werden, sind Ziel dieser Arbeit. Der Füllfaktor und die Leerlaufspannung von ungekapselten Testzellen werden durch eine künstliche Alterung im Labor verringert. Diese Alterung wird anhand des 'Damp-Heat' Tests durchgeführt, bei dem die ungekapselten Zellen Luft von 85C Temperatur und 85% relativer Luftfeuchtigkeit für verschiedene Zeitdauern (6h-438h) ausgesetzt werden. Zur Charakterisierung wenden wir temperaturabhängige Kapazitäts-Spannungsmessungen, Admittanzspektroskopie und Transiente Störstellenspektroskopie an. Wir beobachten elektronische Defektzustände, welche eine proportional zur Dauer der 'Damp-Heat' Belastung erhöhte Aktivierungsenergie aufweisen. Wir machen eine kontinuierliche Energieverteilung von Defektzuständen in der Nähe der CdS/Cu(In,Ga)(S,Se)2 Grenzfläche dafür verantwortlich. Die erhöhte Aktivierungsenergie deutet demnach auf eine Verminderung der Bandverbiegung an der Cu(In,Ga)(S,Se)2 Oberfläche hin. Zudem beobachten wir durch die 'Damp-Heat' Belastung induzierte Änderungen in den Defektspektren von Volumenstörstellen."]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Defect spectroscopy on Cu(In,Ga)(S,Se) 2 -based heterojunction solar cells: role of the damp-heat treatment"]}]}],"canonical_facts":{"dc:creator":["Deibel, Carsten"],"dc:description.abstract":["The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo are investigated. The fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp-heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subject non-encapsulated test cells to damp-heat exposure at 85C ambient temperature and 85% relative humidity for various time periods (6h-438h). We apply temperature-dependent capacitance-voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observe the presence of electronic defect states which showed an increasing activation energy due to damp-heat exposure. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se)2 surface. We observe changes in the bulk defect spectra due to the damp-heat treatment as well.","Die Untersuchung der geänderten Defektcharakteristika, die durch beschleunigte Lebensdauertests von ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Dünnschichtsolarzellen verursacht werden, sind Ziel dieser Arbeit. Der Füllfaktor und die Leerlaufspannung von ungekapselten Testzellen werden durch eine künstliche Alterung im Labor verringert. Diese Alterung wird anhand des 'Damp-Heat' Tests durchgeführt, bei dem die ungekapselten Zellen Luft von 85C Temperatur und 85% relativer Luftfeuchtigkeit für verschiedene Zeitdauern (6h-438h) ausgesetzt werden. Zur Charakterisierung wenden wir temperaturabhängige Kapazitäts-Spannungsmessungen, Admittanzspektroskopie und Transiente Störstellenspektroskopie an. Wir beobachten elektronische Defektzustände, welche eine proportional zur Dauer der 'Damp-Heat' Belastung erhöhte Aktivierungsenergie aufweisen. Wir machen eine kontinuierliche Energieverteilung von Defektzuständen in der Nähe der CdS/Cu(In,Ga)(S,Se)2 Grenzfläche dafür verantwortlich. Die erhöhte Aktivierungsenergie deutet demnach auf eine Verminderung der Bandverbiegung an der Cu(In,Ga)(S,Se)2 Oberfläche hin. Zudem beobachten wir durch die 'Damp-Heat' Belastung induzierte Änderungen in den Defektspektren von Volumenstörstellen."],"dc:format.medium":["application/pdf"],"dc:publisher":["BIS der Universität Oldenburg"],"dc:subject":["[Keine Schlagwörter von Autor/in vergeben.]"],"dc:title":["Defect spectroscopy on Cu(In,Ga)(S,Se) 2 -based heterojunction solar cells: role of the damp-heat treatment"],"dc:type":["doctoralThesis"],"thesis:degree_level":["thesis.doctoral"],"thesis:institution_name":["Universität Oldenburg"]},"updated_at":"2026-07-27T20:27:18Z"}