Optoelectronic properties of size-selected silicon nanocrystals

Thin films of silicon nanocrystals (Si-nc) were produced by laser pyrolysis of silan and accumulated on various substrates. Layer growth, optical properties, charge transport, photoluminescence (PL) and electroluminescence (EL) were investigated on these porous layers. A stick-ball model for layer growth was developed and implemented by Monte-Carlo computer simulations. A limit value of 0.86 for the bulk porosity of the layers was calculated. The experimentally observed exponent of 1.5 in the power law dependence of the electric conductance on the Si-nc layer areal density was fairly well reproduced by further Monte-Carlo simulations. Severe instabilities in charge transport measurements were detected. EL was achieved from p-type crystalline silicon/Si-nc/metal structures. Depending on whether the spectral distributions of EL and PL agree or disagree, radiative recombination via quantum confined states or recombination via silicon oxide related states is proposed as mechanism of EL.

Level thesis:degree_level

thesis.doctoral

Grantor dc:publisher

Universität Oldenburg

Year

2005

Author dc:creator

• Voigt, Felix

• [Keine Schlagwörter von Autor/in vergeben.]

Repository record source_url

http://oops.uni-oldenburg.de/104

OAI identifier oai:identifier

oai:oops.uni-oldenburg.de:104