{"id":{"repo_id":"ohiolink","oai_identifier":"oai:etd.ohiolink.edu:case1346876941"},"canonical_url":"https://search.dev.ndltd.org/etd/ohiolink/oai:etd.ohiolink.edu:case1346876941","repository":{"repo_id":"ohiolink","name":"OhioLINK","base_url":"https://etd.ohiolink.edu/acprod/odb_etd/ws/oai/oai"},"display":{"title":"Analysis of Light Extraction Efficiency Enhancement for Deep Ultraviolet and Visible Light-Emitting Diodes with III-Nitride Micro-Domes","abstract":"III-nitride (In, Al, Ga-N) semiconductors are considered as wide-bandgap materials that have promising applications in the next generation of lighting technology such as ultraviolet (UV) / visible light-emitting diodes and laser diodes. The limitation occurred in light extraction efficiency of III-nitride LEDs is attributed to the large refractive index difference between III-nitride semiconductor and free space, which leads to significant total internal reflection at the semiconductor and air interface. This thesis presents the design of III-nitride micro-dome surface structures at the emission surface of LEDs to enhance the extraction efficiency. The extraction efficiency analysis and micro-dome structure designs were conducted for both deep-UV AlGaN quantum wells (QWs) LEDs and thin-film flip-chip (TFFC) InGaN QWs visible LEDs by using three dimensional finite difference time domain (3D-FDTD) method. The analysis results shows significant enhancement of light extraction efficiency from both deep-UV LEDs and TFFC visible LEDs with III-nitride micro-domes.","abstract_html":"III-nitride (In, Al, Ga-N) semiconductors are considered as wide-bandgap materials that have promising applications in the next generation of lighting technology such as ultraviolet (UV) / visible light-emitting diodes and laser diodes. The limitation occurred in light extraction efficiency of III-nitride LEDs is attributed to the large refractive index difference between III-nitride semiconductor and free space, which leads to significant total internal reflection at the semiconductor and air interface. This thesis presents the design of III-nitride micro-dome surface structures at the emission surface of LEDs to enhance the extraction efficiency. The extraction efficiency analysis and micro-dome structure designs were conducted for both deep-UV AlGaN quantum wells (QWs) LEDs and thin-film flip-chip (TFFC) InGaN QWs visible LEDs by using three dimensional finite difference time domain (3D-FDTD) method. The analysis results shows significant enhancement of light extraction efficiency from both deep-UV LEDs and TFFC visible LEDs with III-nitride micro-domes.","abstract_has_math":false,"creators":["Zhao, Peng"],"institution":"Case Western Reserve University School of Graduate Studies","degree_name":"Master of Sciences (Engineering)","degree_level":"masters","degree_discipline":"EECS - Electrical Engineering","degree_department":null,"school":null,"contributors":["Zhao, Hongping"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013-03-12","date_published":"2013-03-12","updated_at":"2026-07-24T03:35:52Z","subjects":["Electrical Engineering","Optics","III-nitride light-emitting diodes","light extraction efficiency","deep ultraviolet","thin-film flip-chip","micro-domes"],"languages":["English"],"rights":["unrestricted","This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://rave.ohiolink.edu/etdc/view?acc_num=case1346876941","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Zhao, Hongping"]},{"key":"dc:creator","label":"Author","values":["Zhao, Peng"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2013-03-12"]},{"key":"dc:publisher","label":"Institution","values":["Case Western Reserve University School of Graduate Studies / OhioLINK"]},{"key":"dc:type","label":"Dc Type","values":["Electronic Thesis or Dissertation"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["EECS - Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Sciences (Engineering)"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Case Western Reserve University School of Graduate Studies"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical Engineering","Optics","III-nitride light-emitting diodes","light extraction efficiency","deep ultraviolet","thin-film flip-chip","micro-domes"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:rights","label":"Dc Rights","values":["unrestricted","This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://rave.ohiolink.edu/etdc/view?acc_num=case1346876941"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["III-nitride (In, Al, Ga-N) semiconductors are considered as wide-bandgap materials that have promising applications in the next generation of lighting technology such as ultraviolet (UV) / visible light-emitting diodes and laser diodes. The limitation occurred in light extraction efficiency of III-nitride LEDs is attributed to the large refractive index difference between III-nitride semiconductor and free space, which leads to significant total internal reflection at the semiconductor and air interface. This thesis presents the design of III-nitride micro-dome surface structures at the emission surface of LEDs to enhance the extraction efficiency. The extraction efficiency analysis and micro-dome structure designs were conducted for both deep-UV AlGaN quantum wells (QWs) LEDs and thin-film flip-chip (TFFC) InGaN QWs visible LEDs by using three dimensional finite difference time domain (3D-FDTD) method. The analysis results shows significant enhancement of light extraction efficiency from both deep-UV LEDs and TFFC visible LEDs with III-nitride micro-domes."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf","2.08 MB"]},{"key":"dc:title","label":"Title","values":["Analysis of Light Extraction Efficiency Enhancement for Deep Ultraviolet and Visible Light-Emitting Diodes with III-Nitride Micro-Domes"]}]}],"canonical_facts":{"dc:contributor":["Zhao, Hongping"],"dc:creator":["Zhao, Peng"],"dc:date":["2013-03-12"],"dc:description":["III-nitride (In, Al, Ga-N) semiconductors are considered as wide-bandgap materials that have promising applications in the next generation of lighting technology such as ultraviolet (UV) / visible light-emitting diodes and laser diodes. The limitation occurred in light extraction efficiency of III-nitride LEDs is attributed to the large refractive index difference between III-nitride semiconductor and free space, which leads to significant total internal reflection at the semiconductor and air interface. This thesis presents the design of III-nitride micro-dome surface structures at the emission surface of LEDs to enhance the extraction efficiency. The extraction efficiency analysis and micro-dome structure designs were conducted for both deep-UV AlGaN quantum wells (QWs) LEDs and thin-film flip-chip (TFFC) InGaN QWs visible LEDs by using three dimensional finite difference time domain (3D-FDTD) method. The analysis results shows significant enhancement of light extraction efficiency from both deep-UV LEDs and TFFC visible LEDs with III-nitride micro-domes."],"dc:format":["application/pdf","2.08 MB"],"dc:identifier":["http://rave.ohiolink.edu/etdc/view?acc_num=case1346876941"],"dc:language":["English"],"dc:publisher":["Case Western Reserve University School of Graduate Studies / OhioLINK"],"dc:rights":["unrestricted","This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws."],"dc:subject":["Electrical Engineering","Optics","III-nitride light-emitting diodes","light extraction efficiency","deep ultraviolet","thin-film flip-chip","micro-domes"],"dc:title":["Analysis of Light Extraction Efficiency Enhancement for Deep Ultraviolet and Visible Light-Emitting Diodes with III-Nitride Micro-Domes"],"dc:type":["Electronic Thesis or Dissertation"],"thesis:degree_discipline":["EECS - Electrical Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Sciences (Engineering)"],"thesis:institution_name":["Case Western Reserve University School of Graduate Studies"]},"updated_at":"2026-07-24T03:35:52Z"}